公开(公告)号：US20250008739A1

公开(公告)日：2025-01-02

申请号：US18707987

申请日：2022-11-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Haruyuki BABA ,  Hitoshi KUNITAKE

IPC: H10B51/30

Abstract: A memory element with a novel structure is provided. The memory element includes a stack of a first electrode, a first insulating layer, a semiconductor layer, a second insulating layer, and a second electrode. The first electrode, the first insulating layer, the semiconductor layer, the second insulating layer, and the second electrode include a region where they overlap with each other. An oxide semiconductor, which is a kind of a metal oxide, is used for the semiconductor layer. For the first insulating layer, a material having anti-ferroelectricity is used.

公开(公告)号：US20230259681A1

公开(公告)日：2023-08-17

申请号：US18025213

申请日：2021-09-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hitoshi KUNITAKE ,  Haruyuki BABA

IPC: G06F30/367 ,  G06F30/3323 ,  G06F30/3308

CPC classification number: G06F30/367 ,  G06F30/3323 ,  G06F30/3308

Abstract: A program for executing a simulation of a circuit including an anti-ferroelectric element is provided. An equivalent circuit model of an anti-ferroelectric element is set in the program. The equivalent circuit model includes, between a first terminal and a second terminal, a ferroelectric element, a linear resistor, a first transistor, and a second transistor. The first terminal is electrically connected to one of a pair of electrodes of the ferroelectric element and a first terminal of the linear resistor; the other of the pair of electrodes of the ferroelectric element is electrically connected to one of a source electrode and a drain electrode of the first transistor; a gate electrode of the first transistor is electrically connected to a gate electrode of the second transistor, one of a source electrode and a drain electrode of the second transistor, and a second terminal of the linear resistor; and the second terminal is electrically connected to the other of the source electrode and the drain electrode of the first transistor and the other of the source electrode and the drain electrode of the second transistor.

公开(公告)号：US20230073146A1

公开(公告)日：2023-03-09

申请号：US17889597

申请日：2022-08-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Haruyuki BABA ,  Naoki OKUNO ,  Yoshihiro KOMATSU ,  Toshikazu OHNO

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/51

Abstract: A semiconductor device having a large on-state current and high reliability is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a third oxide and a fourth oxide over the second oxide, a first conductor over the third oxide, a second conductor over the fourth oxide, a fifth oxide over the second oxide, a second insulator over the fifth oxide, and a third conductor over the second insulator. The fifth oxide is in contact with a top surface of the second oxide, a side surface of the first conductor, a side surface of the second conductor, a side surface of the third oxide, and a side surface of the fourth oxide. The second oxide contains In, an element M, and Zn. The first oxide and the fifth oxide each contain at least one of constituent elements included in the second oxide. The third oxide and the fourth oxide each contain the element M. The third oxide and the fourth oxide include a region where the concentration of the element M is higher than that in the second oxide.

公开(公告)号：US20180012910A1

公开(公告)日：2018-01-11

申请号：US15637081

申请日：2017-06-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Motoki NAKASHIMA ,  Haruyuki BABA

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  G02F1/1368 ,  G02F1/1362

CPC classification number: H01L27/1225 ,  G02F1/1368 ,  G02F2001/136222 ,  G02F2201/44 ,  H01L29/66757 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A novel metal oxide is provided. The metal oxide has a plurality of energy gaps, and includes a first region having a high energy level of a conduction band minimum and a second region having an energy level of a conduction band minimum lower than that of the first region. The second region comprises more carriers than the first region. A difference between the energy level of the conduction band minimum of the first region and the energy level of the conduction band minimum of the second region is 0.2 eV or more. The energy gap of the first region is greater than or equal to 3.3 eV and less than or equal to 4.0 eV and the energy gap of the second region is greater than or equal to 2.2 eV and less than or equal to 2.9 eV.

公开(公告)号：US20240313121A1

公开(公告)日：2024-09-19

申请号：US18575942

申请日：2022-07-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Satoru SAITO ,  Masahiro TAKAHASHI ,  Naoki OKUNO ,  Haruyuki BABA ,  Hitoshi KUNITAKE ,  Shunpei YAMAZAKI

IPC: H01L29/786

CPC classification number: H01L29/7869

Abstract: A semiconductor device with a small variation in transistor electrical characteristics is provided. The semiconductor device includes an oxide; a first conductor, a second conductor, and a first insulator over the oxide; a second insulator over the first conductor and the second conductor; a third insulator over the first insulator; a third conductor over the third insulator; and a fourth insulator over the second insulator and the third conductor. The fourth insulator is in contact with a top surface of the second insulator and a top surface of the third conductor. The first insulator includes regions that are in contact with a top surface of the oxide, a side surface of the first conductor, a side surface of the second conductor, and a side surface of the second insulator. The oxide includes indium, gallium, aluminum, and zinc. Each of the first insulator and the fourth insulator includes aluminum and oxygen. The fourth insulator has an amorphous structure. The oxide has a concentration gradient in which an aluminum concentration increases toward the top surface of the oxide from the bottom surface of the oxide.

公开(公告)号：US20230378371A1

公开(公告)日：2023-11-23

申请号：US18364749

申请日：2023-08-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yukinori SHIMA ,  Shinpei MATSUDA ,  Haruyuki BABA ,  Ryunosuke HONDA

IPC: H01L29/786 ,  H01L29/778 ,  H01L21/8234 ,  H01L21/02 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/78648 ,  H01L21/823412 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/66969 ,  H01L29/78696 ,  H01L29/24

Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.

公开(公告)号：US20230326955A1

公开(公告)日：2023-10-12

申请号：US18022304

申请日：2021-08-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Sachiaki TEZUKA ,  Haruyuki BABA ,  Yuji EGI ,  Yasuhiro JINBO ,  Yujiro SAKURADA ,  Takeshi AOKI

IPC: H01L21/20 ,  H01L21/3115

CPC classification number: H01L28/60 ,  H01L21/3115

Abstract: A semiconductor device with a small variation in characteristics is provided. In a manufacturing method of a semiconductor device including a capacitor with reduced leak current, a first conductor is formed; a second insulator is formed over the first conductor; a third insulator is formed over the second insulator; a second conductor is formed over the third insulator; a fourth insulator is deposited over the second conductor and the third insulator; by heat treatment, hydrogen contained in the third insulator diffuses into or is absorbed by the second insulator; the first conductor is one electrode of the capacitor; the second conductor is the other electrode of the capacitor; and each of the second insulator and the third insulator is a dielectric of the capacitor.

公开(公告)号：US20200335529A1

公开(公告)日：2020-10-22

申请号：US16918472

申请日：2020-07-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yukinori SHIMA ,  Shinpei MATSUDA ,  Haruyuki BABA ,  Ryunosuke HONDA

IPC: H01L27/12 ,  H01L29/778 ,  H01L29/786 ,  H01L29/66

Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.

公开(公告)号：US20180247958A1

公开(公告)日：2018-08-30

申请号：US15963141

申请日：2018-04-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yukinori SHIMA ,  Shinpei MATSUDA ,  Haruyuki BABA ,  Ryunosuke HONDA

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/778 ,  H01L29/66 ,  H01L29/24

CPC classification number: H01L27/1225 ,  H01L27/127 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/7869 ,  H01L29/78696

Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.

公开(公告)号：US20240387741A1

公开(公告)日：2024-11-21

申请号：US18619261

申请日：2024-03-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Haruyuki BABA ,  Naoki OKUNO ,  Yoshihiro KOMATSU ,  Toshikazu OHNO

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/51

Abstract: A semiconductor device having a large on-state current and high reliability is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a third oxide and a fourth oxide over the second oxide, a first conductor over the third oxide, a second conductor over the fourth oxide, a fifth oxide over the second oxide, a second insulator over the fifth oxide, and a third conductor over the second insulator. The fifth oxide is in contact with a top surface of the second oxide, a side surface of the first conductor, a side surface of the second conductor, a side surface of the third oxide, and a side surface of the fourth oxide. The second oxide contains In, an element M, and Zn. The first oxide and the fifth oxide each contain at least one of constituent elements included in the second oxide. The third oxide and the fourth oxide each contain the element M. The third oxide and the fourth oxide include a region where the concentration of the element M is higher than that in the second oxide.