公开(公告)号：US20240030061A1

公开(公告)日：2024-01-25

申请号：US18255574

申请日：2021-11-19

Applicant: Commissariat À L'énergie Atomique Et Aux Énergies Alternatives ,  Soitec

Inventor： Larry Vincent ,  Shay Reboh ,  Lucie Le Van-Jodin ,  Frédéric Milesi ,  Ludovic Ecarnot ,  Gweltaz Gaudin ,  Didier Landru

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/306

CPC classification number: H01L21/76254 ,  H01L21/02019 ,  H01L21/30604 ,  H01L21/76218

Abstract: A donor substrate for transferring a single-crystal thin layer made of a first material, onto a receiver substrate. The donor substrate comprises: —a buried weakened plane delimiting an upper portion and a lower portion of the donor substrate, —in the upper portion, a first layer, a second layer adjacent to the buried weakened plane, and a stop layer between the first layer and the second layer the first layer composed of the first material, the stop layer being formed of a second material, —an amorphized sub-portion, made amorphous by ion implantation, having a thickness less than that of the upper portion, and including at least the first layer; the second layer comprising at least one single-crystal sub-layer, adjacent to the buried weakened plane. Two embodiments of a method may be used for transferring a single-crystal thin layer from the donor substrate.

公开(公告)号：US11855120B2

公开(公告)日：2023-12-26

申请号：US17649982

申请日：2022-02-04

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Oleg Kononchuk ,  Ludovic Ecarnot ,  Christelle Michau

IPC: H01L27/146 ,  H01L21/762

CPC classification number: H01L27/14685 ,  H01L21/76254 ,  H01L27/14625

Abstract: A substrate for a front-side type image sensor includes a supporting semiconductor substrate, an electrically insulating layer, and a silicon-germanium semiconductor layer, known as the active layer. The electrically insulating layer includes a stack of dielectric and metallic layers selected such that the reflectivity of the stack in a wavelength range of between 700 nm and 3 μm is greater than the reflectivity of a silicon oxide layer having a thickness equal to that of the stack. The substrate also comprises a silicon layer between the electrically insulating layer and the silicon-germanium active layer. The disclosure also relates to a method for the production of such a substrate.

公开(公告)号：US20220059603A1

公开(公告)日：2022-02-24

申请号：US17418148

申请日：2019-12-23

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Ludovic Ecarnot ,  Damien Massy ,  Nadia Ben Mohamed ,  Nicolas Daval ,  Christophe Girard ,  Christophe Maleville

IPC: H01L27/146 ,  H01L31/18

Abstract: A method of manufacturing a substrate for a front-facing image sensor, comprises:—providing a donor substrate comprising a semiconductor layer to be transferred,—providing a semiconductor carrier substrate,—bonding the donor substrate to the carrier substrate, an electrically insulating layer being at the bonding interface,—transferring the semiconductor layer to the carrier substrate,—implanting gaseous ions in the carrier substrate via the transferred semiconductor layer and the electrically insulating layer, and—after the implantation, epitaxially growing an additional semiconductor layer on the transferred semiconductor layer.

公开(公告)号：US20190074215A1

公开(公告)日：2019-03-07

申请号：US16081816

申请日：2017-03-02

Applicant: Soitec

Inventor： Ludovic Ecarnot ,  Nadia Ben Mohammed ,  Carine Duret

IPC: H01L21/762 ,  H01L21/66 ,  H01L21/20 ,  H01L21/84 ,  H01L21/02

Abstract: A method for determining a suitable implanting energy of at least two atomic species in a donor substrate to create a weakened zone defining a monocrystalline semiconductor layer to be transferred onto a receiver substrate, comprises the following steps: (i) forming a dielectric layer on at least one of the donor substrate and the receiver substrate; (ii) co-implanting the species in the donor substrate; (iii) bonding the donor substrate on the receiver substrate; (iv) detaching the donor substrate along the weakened zone to transfer the monocrystalline semiconductor layer and recover the remainder of the donor substrate; (v) inspecting the peripheral crown of the remainder of the donor substrate, or of the receiver substrate on which the monocrystalline semiconductor layer was transferred at step (iv); (vi) if the crown exhibits zones transferred onto the receiver substrate, determining the fact that the implanting energy at step (ii) is too high; (vii) if said the crown does not exhibit zones transferred onto the receiver substrate, determining the fact that the implanting energy at step (ii) is suitable.

公开(公告)号：US09768057B2

公开(公告)日：2017-09-19

申请号：US15159646

申请日：2016-05-19

Applicant: Soitec

Inventor： Ludovic Ecarnot ,  Nicolas Daval ,  Nadia Ben Mohamed ,  Francois Boedt ,  Carole David ,  Isabelle Guerin

IPC: H01L21/66 ,  H01L21/762 ,  H01L21/02 ,  B28D5/00

CPC classification number: H01L21/76251 ,  B28D5/00 ,  H01L21/02002 ,  H01L21/76254

Abstract: A method for transferring a layer from a single-crystal substrate, called a donor substrate, onto a receiver substrate, includes supplying the single-crystal donor substrate, the substrate having a notch oriented in a first direction of the crystal and a weakness region bounding the layer to be transferred, bonding of the single-crystal donor substrate onto the receiver substrate, the main surface of the donor substrate opposite to the weakness region with respect to the layer to be transferred being at the bonding interface, and detachment of the donor substrate along the weakness region. In the method, the donor substrate has, on the main surface bonded to the receiver substrate, an array of atomic steps extending essentially in a second direction of the crystal different from the first direction.