公开(公告)号：US09818548B2

公开(公告)日：2017-11-14

申请号：US15006366

申请日：2016-01-26

Applicant: TDK CORPORATION

Inventor： Hitoshi Saita ,  Hiroyasu Inoue ,  Yoshihiko Yano

IPC: H01G4/06 ,  C04B35/00 ,  H01G4/12 ,  H01G4/33 ,  H01G4/10

CPC classification number: H01G4/33 ,  H01G4/1227 ,  H01G4/1236

Abstract: A thin film capacitor comprises a base material, a dielectric layer provided on the base material, and an upper electrode layer provided on the dielectric layer. The dielectric layer includes a plurality of columnar crystals that extend along a normal direction with respect to a surface of the upper electrode layer, the columnar crystal has a perovskite crystal structure represented by AyBO3, an element A is at least one of Ba, Ca, Sr, and Pb, an element B is at least one of Ti, Zr, Sn, and Hf, y≦0.995 is satisfied, and the dielectric layer contains 0.05 to 2.5 mol of Al per 100 mol of AyBO3.