公开(公告)号：US20160217925A1

公开(公告)日：2016-07-28

申请号：US15006632

申请日：2016-01-26

Applicant: TDK CORPORATION

Inventor： Hitoshi Saita ,  Hiroyasu Inoue ,  Yoshihiko Yano

IPC: H01G4/12 ,  H01G4/012 ,  H01G4/008

CPC classification number: H01G4/1227 ,  H01G4/1236 ,  H01G4/33

Abstract: A thin film capacitor comprises a base material, a dielectric layer provided on the base material, and an upper electrode layer provided on the dielectric layer. The dielectric layer includes a plurality of columnar crystals that extend along a normal direction with respect to a surface of the upper electrode layer. The columnar crystal has a perovskite crystal structure represented by AyBO3. An element A is at least one of Ba, Ca, Sr, and Pb, and an element B is at least one of Ti, Zr, Sn, and Hf. Further, y≦0.995 is satisfied, and the dielectric layer contains 0.05 to 2.5 mol of Mg per 100 mol of AyBO3.

Abstract translation: 薄膜电容器包括基材，设置在基材上的电介质层和设置在电介质层上的上电极层。 电介质层包括相对于上电极层的表面沿着法线方向延伸的多个柱状晶体。 柱状晶体具有由AyBO 3表示的钙钛矿晶体结构。 元素A是Ba，Ca，Sr和Pb中的至少一种，元素B是Ti，Zr，Sn和Hf中的至少一种。 此外，y≤0.995，电介质层每100摩尔AyBO 3含有0.​​05〜2.5摩尔的Mg。

公开(公告)号：US09837211B2

公开(公告)日：2017-12-05

申请号：US15006632

申请日：2016-01-26

Applicant: TDK CORPORATION

Inventor： Hitoshi Saita ,  Hiroyasu Inoue ,  Yoshihiko Yano

IPC: H01G4/06 ,  H01G4/30 ,  H01G4/12 ,  H01G4/008 ,  C04B35/00 ,  H01G4/33

CPC classification number: H01G4/1227 ,  H01G4/1236 ,  H01G4/33

Abstract: A thin film capacitor comprises a base material, a dielectric layer provided on the base material, and an upper electrode layer provided on the dielectric layer. The dielectric layer includes a plurality of columnar crystals that extend along a normal direction with respect to a surface of the upper electrode layer. The columnar crystal has a perovskite crystal structure represented by AyBO3. An element A is at least one of Ba, Ca, Sr, and Pb, and an element B is at least one of Ti, Zr, Sn, and Hf. Further, y≦0.995 is satisfied, and the dielectric layer contains 0.05 to 2.5 mol of Mg per 100 mol of AyBO3.

公开(公告)号：US09818548B2

公开(公告)日：2017-11-14

申请号：US15006366

申请日：2016-01-26

Applicant: TDK CORPORATION

Inventor： Hitoshi Saita ,  Hiroyasu Inoue ,  Yoshihiko Yano

IPC: H01G4/06 ,  C04B35/00 ,  H01G4/12 ,  H01G4/33 ,  H01G4/10

CPC classification number: H01G4/33 ,  H01G4/1227 ,  H01G4/1236

Abstract: A thin film capacitor comprises a base material, a dielectric layer provided on the base material, and an upper electrode layer provided on the dielectric layer. The dielectric layer includes a plurality of columnar crystals that extend along a normal direction with respect to a surface of the upper electrode layer, the columnar crystal has a perovskite crystal structure represented by AyBO3, an element A is at least one of Ba, Ca, Sr, and Pb, an element B is at least one of Ti, Zr, Sn, and Hf, y≦0.995 is satisfied, and the dielectric layer contains 0.05 to 2.5 mol of Al per 100 mol of AyBO3.