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公开(公告)号：US20200313078A1
公开(公告)日：2020-10-01
申请号：US16370944
申请日：2019-03-30
Applicant: Texas Instruments Incorporated
Inventor： Keith Ryan Green
Abstract: A Hall sensor includes a Hall well, such as an implanted region in a surface layer of a semiconductor structure, and four doped regions spaced apart from one another in the implanted region. The implanted region and the doped regions include majority carriers of the same conductivity type. The sensor also includes a dielectric layer that extends over the implanted region, and an electrode layer over the dielectric layer to operate as a control gate to set or adjust the sensor performance. A first supply circuit provides a first bias signal to a first pair of the terminals, and a second supply circuit provides a second bias signal to the electrode layer.
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公开(公告)号：US10553784B2
公开(公告)日：2020-02-04
申请号：US16147007
申请日：2018-09-28
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Keith Ryan Green , Iouri Mirgorodski
Abstract: A vertical Hall element and method of fabricating are disclosed. The method includes forming a buried region having a first conductivity type in a substrate having a second conductivity type and implanting a dopant of the first conductivity type into a well region between the top surface of the substrate and the buried region. The buried region has a doping concentration increasing with an increasing depth from a top surface of the substrate and the well region has a doping concentration decreasing from the top surface of the substrate to the buried region. The method includes forming first through fifth contacts on the well region. First and second contacts define a conductive path and second and third contacts define another conductive path through the well region. The fourth contact is formed between first and second contacts and the fifth contact is formed between second and third contacts.
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公开(公告)号：US10374004B2
公开(公告)日：2019-08-06
申请号：US16257410
申请日：2019-01-25
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Dok Won Lee , William David French , Keith Ryan Green
Abstract: Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.
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Patent Agency Ranking
公开(公告)号：US20190157342A1
公开(公告)日：2019-05-23
申请号：US16257410
申请日：2019-01-25
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Dok Won Lee , William David French , Keith Ryan Green
CPC classification number: H01L27/22 , H01L43/04 , H01L43/065 , H01L43/14
Abstract: Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.
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公开(公告)号：US20190086484A1
公开(公告)日：2019-03-21
申请号：US15709866
申请日：2017-09-20
Applicant: Texas Instruments Incorporated
Inventor： Keith Ryan Green , Byron Jon Roderick Shulver , Iouri Mirgorodski
Abstract: A microelectronic device includes a vertical Hall sensor for measuring magnetic fields in two dimensions. In one implementation, the disclosed microelectronic device involves a vertical Hall plate with a cross-shaped upper terminal and a lower terminal which includes a buried layer. The cross-shaped upper terminal has a length-to-width ratio of 5 to 12 where it contacts the vertical Hall plate. The length is measured from one end of one arm of the cross-shaped upper terminal to an opposite end of an opposite arm. The width is an average width of both arms. Hall sense taps are located outside of the cross-shaped upper terminal. Current returns connect to the buried layer.
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公开(公告)号：US20180130849A1
公开(公告)日：2018-05-10
申请号：US15865825
申请日：2018-01-09
Applicant: Texas Instruments Incorporated
Inventor： Dok Won Lee , William David French , Keith Ryan Green
CPC classification number: H01L27/22 , H01L43/04 , H01L43/065 , H01L43/14
Abstract: Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.
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公开(公告)号：US20170301726A1
公开(公告)日：2017-10-19
申请号：US15639327
申请日：2017-06-30
Applicant: Texas Instruments Incorporated
Inventor： Keith Ryan Green , Rajni J. Aggarwal , Ajit Sharma
CPC classification number: H01L27/22 , H01L43/04 , H01L43/065 , H01L43/14
Abstract: A CMOS integrated circuit includes a Hall sensor having a Hall plate formed in a first isolation layer which is formed concurrently with a second isolation layer under a MOS transistor. A first shallow well with a conductivity type opposite from the first isolation layer is formed over, and extending to, the Hall plate. The first shallow well is formed concurrently with a second shallow well under the MOS transistor. The Hall sensor may be a horizontal Hall sensor for sensing magnetic fields oriented perpendicular to the top surface of the substrate of the integrated circuit, or may be a vertical Hall sensor for sensing magnetic fields oriented parallel to the top surface of the substrate of the integrated circuit.
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公开(公告)号：US20170125479A1
公开(公告)日：2017-05-04
申请号：US14932949
申请日：2015-11-04
Applicant: Texas Instruments Incorporated
Inventor： Keith Ryan Green , Rajni J. Aggarwal , Ajit Sharma
CPC classification number: H01L27/22 , H01L43/04 , H01L43/065 , H01L43/14
Abstract: A CMOS integrated circuit includes a Hall sensor having a Hall plate formed in a first isolation layer which is formed concurrently with a second isolation layer under a MOS transistor. A first shallow well with a conductivity type opposite from the first isolation layer is formed over, and extending to, the Hall plate. The first shallow well is formed concurrently with a second shallow well under the MOS transistor. The Hall sensor may be a horizontal Hall sensor for sensing magnetic fields oriented perpendicular to the top surface of the substrate of the integrated circuit, or may be a vertical Hall sensor for sensing magnetic fields oriented parallel to the top surface of the substrate of the integrated circuit.
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