Apparatus and method for obtaining data for diagnosing condition of living body using UHF signal
    31.
    发明授权
    Apparatus and method for obtaining data for diagnosing condition of living body using UHF signal 失效
    使用UHF信号获取生物体状况诊断数据的装置和方法

    公开(公告)号:US06735469B2

    公开(公告)日:2004-05-11

    申请号:US10029232

    申请日:2001-12-28

    IPC分类号: A61H3902

    摘要: An apparatus and method for obtaining data for diagnosing the condition of a living body without harming living tissue using an ultrahigh frequency (UHF) signal includes a signal transmitter, a signal receiver, and a signal processor. Signal transmitter generates a UHF signal and radiates the UHF signal at a first of two acupuncture points of a living body. The signal receiver receives a UHF signal emitted from a second acupuncture point, detects and outputs the magnitude of the received UHF signal. The signal processor compares the detected magnitude of the received UHF signal with a magnitude of the UHF signal generated by the signal transmitter, calculates from the result of comparing and recording a conductivity of each of the acupuncture sections when the UHF signal passes through the corresponding acupuncture section, calculates at least one of a first variation, which indicates a degree of variation in conductivities of the acupuncture sections, and a second variation, which indicates a degree of variation in conductivities for a plurality of channels, using at least two recorded conductivities of the respective acupuncture sections, and outputs the result of calculation as data for diagnosing the condition of the living body.

    摘要翻译: 使用超高频(UHF)信号获取用于诊断活体状况而不伤害生物体的数据的装置和方法包括信号发送器,信号接收器和信号处理器。 信号发生器产生一个UHF信号,并在生物体的两个针刺点的第一个处照射UHF信号。 信号接收器接收从第二针灸点发射的UHF信号,检测并输出所接收的UHF信号的幅度。 信号处理器将检测到的UHF信号的大小与由信号发射器产生的UHF信号的幅度进行比较,从UHF信号通过相应的针灸时比较和记录每个针灸部分的电导率的结果计算出 计算表示针刺部分的电导率变化程度的第一变化中的至少一个,以及指示多个通道的电导率变化程度的第二变化,使用至少两个记录的电导率 相应的针刺部分,并输出计算结果作为用于诊断生物体状况的数据。

    Integrated circuit devices having buffer layers therein which contain
metal oxide stabilized by heat treatment under low temperature
    32.
    发明授权
    Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature 失效
    其中具有缓冲层的集成电路器件含有通过在低温下热处理而稳定的金属氧化物

    公开(公告)号:US6144060A

    公开(公告)日:2000-11-07

    申请号:US127353

    申请日:1998-07-31

    摘要: Integrated circuit devices include a first dielectric layer, an electrically insulating layer on the first dielectric layer and an an aluminum oxide buffer layer formed by atomic layer deposition (ALD) and stabilized by heat treatment at a temperature of less than about 600.degree. C., between the first dielectric layer and the electrically insulating layer. The first dielectric layer may comprise a high dielectric material such as a ferroelectric or paraelectric material. The electrically insulating layer may also comprise a material selected from the group consisting of silicon dioxide, borophosphosilicate glass (BPSG) and phosphosilicate glass (PSG). To provide a preferred integrated circuit capacitor, a substrate may be provided and an interlayer dielectric layer may be provided on the substrate. Here, a metal layer may also be provided between the interlayer dielectric layer and the first dielectric layer. The metal layer may comprise a material selected from the group consisting of Pt, Ru, Ir, and Pd.

    摘要翻译: 集成电路器件包括第一电介质层,第一电介质层上的电绝缘层和通过原子层沉积(ALD)形成并通过在小于约600℃的温度下进行热处理而稳定的氧化铝缓冲层, 在第一介电层和电绝缘层之间。 第一电介质层可以包括高电介质材料,例如铁电或顺电材料。 电绝缘层还可以包括选自二氧化硅,硼磷硅酸盐玻璃(BPSG)和磷硅玻璃(PSG)的材料。 为了提供优选的集成电路电容器,可以提供衬底,并且可以在衬底上提供层间电介质层。 这里,还可以在层间介电层和第一介电层之间设置金属层。 金属层可以包括选自Pt,Ru,Ir和Pd的材料。