公开(公告)号：US20150201501A1

公开(公告)日：2015-07-16

申请号：US14155884

申请日：2014-01-15

Applicant: Taiwan Semiconductor Manufacturing CO., LTD.

Inventor： Chih-Chien Chi ,  Chung-Chi Ko ,  Mei-Ling Chen ,  Hung-Yi Huang ,  Szu-Ping Tung ,  Ching-Hua Hsieh

IPC: H05K3/22 ,  H05K3/02 ,  H05K1/02 ,  H05K3/00

CPC classification number: H01L21/02107 ,  H01L21/02164 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76868 ,  Y10T428/24331

Abstract: A selectively repairing process for a barrier layer is provided. A repair layer is formed by chemical vapor deposition using an organosilicon compound as a precursor gas. The precursor gas adsorbed on a low-k dielectric layer exposed by defects in a barrier layer is transformed to a porous silicon oxide layer has a density more than the density of the low-k dielectric layer.

Abstract translation: 提供了一种用于阻挡层的选择性修复方法。 使用有机硅化合物作为前体气体通过化学气相沉积形成修复层。 吸附在由阻挡层中的缺陷暴露的低k电介质层上的前体气体转变为具有比低k电介质层的密度更高的密度的多孔氧化硅层。