公开(公告)号：US20140073124A1

公开(公告)日：2014-03-13

申请号：US14079671

申请日：2013-11-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Huei CHEN ,  Jung-Hsuan CHEN ,  Shao-Yu CHOU ,  Hung-Jen LIAO ,  Li-Chun TIEN

IPC: H01L21/28

CPC classification number: H01L21/28008 ,  H01L21/28123 ,  H01L21/823425 ,  H01L21/823481 ,  H01L27/0207 ,  H01L29/66628 ,  H01L29/7848

Abstract: A method includes forming a first plurality of fingers over an active area of a semiconductor substrate. Each of the first plurality of fingers has a respective length that extends in a direction that is parallel to width direction of the active area. The first plurality of fingers form at least one gate of at least one transistor having a source and a drain formed by a portion of the active area. A first dummy polysilicon structure is formed over a portion of the active area between an outer one of the first plurality of fingers and a first edge of the semiconductor substrate. A second dummy polysilicon structure is over the semiconductor substrate between the first dummy polysilicon structure and the first edge of the semiconductor substrate.

Abstract translation: 一种方法包括在半导体衬底的有效区域上形成第一多个指状物。 第一多个指状物中的每一个具有在与有源区域的宽度方向平行的方向上延伸的相应长度。 第一多个指状物形成至少一个晶体管的至少一个栅极，该晶体管具有由有源区域的一部分形成的源极和漏极。 第一虚设多晶硅结构形成在第一多个指状物的外部之一和半导体衬底的第一边缘之间的有源区域的一部分上。 第二虚设多晶硅结构在第一虚设多晶硅结构和半导体衬底的第一边缘之间的半导体衬底之上。