Magnetic head and magnetic recording/retrieving apparatus using the same
    31.
    发明申请
    Magnetic head and magnetic recording/retrieving apparatus using the same 失效
    磁头及使用其的磁记录/回收装置

    公开(公告)号:US20060198056A1

    公开(公告)日:2006-09-07

    申请号:US11415572

    申请日:2006-05-01

    IPC分类号: G11B5/60

    摘要: A magnetic head comprises a retrieving unit for converting magnetic information output from a recording medium into an electric signal, a writing unit having the function of electromagnetic conversion for writing the magnetic information in the recording medium in response to the electric signal, and a first protective film formed on the retrieving unit. A second protective film is formed on the first protective film. The coefficient of linear expansion of the second protective film is reduced in comparison with that of the first protective film. Furthermore, the first protective film is an alumina film; in contrast, the second protective film is a film made of an alumina film containing silicon oxide therein.

    摘要翻译: 磁头包括用于将从记录介质输出的磁信息转换为电信号的检索单元,具有电磁转换功能的写入单元,用于响应于电信号将磁信息写入记录介质中;以及第一保护 在检索单元上形成的胶片。 在第一保护膜上形成第二保护膜。 与第一保护膜相比,第二保护膜的线膨胀系数降低。 此外,第一保护膜是氧化铝膜; 相反,第二保护膜是由其中含有氧化硅的氧化铝膜制成的膜。

    Method of manufacturing a magnetic head

    公开(公告)号:US20060172532A1

    公开(公告)日:2006-08-03

    申请号:US11331426

    申请日:2006-01-11

    IPC分类号: H01L21/44

    CPC分类号: G11B5/3163 G11B5/398

    摘要: In forming a narrow pattern, it is difficult to form a lift-off resist pattern with an overhang shape. Accordingly, it results in a phenomenon in which the angle at the end of the GMR layer is reduced to 45° or less. It is necessary to provide a lift-off resist pattern that forms the end of the GMR film to be at an angle of as abrupt as 45° or more and ensures lift-off. According to one embodiment of the invention, a method of manufacturing a thin film magnetic head of using a resist pattern comprises three-layered organic films of a PMGI layer, an organic film layer and an image layer from the lower layer as a lift-off resist pattern, etching the organic film layer and the PMGI layer by using the imaging layer as a mask, then etching a GMR layer by using, as a mask, a lift-off resist pattern in which the organic film layer and the imaging layer are formed into the overhang shape prepared by etching the PMGI layer in a developer solution, and then forming a magnetic domain control film and an electrode film on both ends of the GMR layer by using a lift-off method.