公开(公告)号：US07605006B2

公开(公告)日：2009-10-20

申请号：US11331426

申请日：2006-01-11

申请人： Makoto Morijiri ,  Haruko Tanaka ,  Junichi Tanabe

发明人： Makoto Morijiri ,  Haruko Tanaka ,  Junichi Tanabe

IPC分类号： G11B5/39 ,  H01L21/312 ,  H01L21/00 ,  G11B5/33

CPC分类号： G11B5/3163 ,  G11B5/398

摘要： In forming a narrow pattern, it is difficult to form a lift-off resist pattern with an overhang shape. Accordingly, it results in a phenomenon in which the angle at the end of the GMR layer is reduced to 45° or less. It is necessary to provide a lift-off resist pattern that forms the end of the GMR film to be at an angle of as abrupt as 45° or more and ensures lift-off. According to one embodiment of the invention, a method of manufacturing a thin film magnetic head of using a resist pattern comprises three-layered organic films of a PMGI layer, an organic film layer and an image layer from the lower layer as a lift-off resist pattern, etching the organic film layer and the PMGI layer by using the imaging layer as a mask, then etching a GMR layer by using, as a mask, a lift-off resist pattern in which the organic film layer and the imaging layer are formed into the overhang shape prepared by etching the PMGI layer in a developer solution, and then forming a magnetic domain control film and an electrode film on both ends of the GMR layer by using a lift-off method.

摘要翻译： 在形成窄图案时，难以形成具有突出形状的剥离抗蚀剂图案。 因此，导致GMR层的端部的角度降低到45°以下的现象。 需要提供形成GMR膜的端部的剥离抗蚀剂图形，其形成为突然为45°以上的角度并确保剥离。 根据本发明的一个实施例，制造使用抗蚀剂图案的薄膜磁头的方法包括作为剥离的PMGI层，有机膜层和来自下层的图像层的三层有机膜 通过使用成像层作为掩模蚀刻有机膜层和PMGI层，然后通过使用有机膜层和成像层的剥离抗蚀剂图案作为掩模蚀刻GMR层， 形成为通过在显影剂溶液中蚀刻PMGI层制备的突出形状，然后通过剥离法在GMR层的两端上形成磁畴控制膜和电极膜。

公开(公告)号：US20060172532A1

公开(公告)日：2006-08-03

申请号：US11331426

申请日：2006-01-11

申请人： Makoto Morijiri ,  Haruko Tanaka ,  Junichi Tanabe

发明人： Makoto Morijiri ,  Haruko Tanaka ,  Junichi Tanabe

IPC分类号： H01L21/44

CPC分类号： G11B5/3163 ,  G11B5/398

摘要： In forming a narrow pattern, it is difficult to form a lift-off resist pattern with an overhang shape. Accordingly, it results in a phenomenon in which the angle at the end of the GMR layer is reduced to 45° or less. It is necessary to provide a lift-off resist pattern that forms the end of the GMR film to be at an angle of as abrupt as 45° or more and ensures lift-off. According to one embodiment of the invention, a method of manufacturing a thin film magnetic head of using a resist pattern comprises three-layered organic films of a PMGI layer, an organic film layer and an image layer from the lower layer as a lift-off resist pattern, etching the organic film layer and the PMGI layer by using the imaging layer as a mask, then etching a GMR layer by using, as a mask, a lift-off resist pattern in which the organic film layer and the imaging layer are formed into the overhang shape prepared by etching the PMGI layer in a developer solution, and then forming a magnetic domain control film and an electrode film on both ends of the GMR layer by using a lift-off method.

公开(公告)号：US08911921B2

公开(公告)日：2014-12-16

申请号：US12598477

申请日：2008-04-24

申请人： Akira Matsumoto ,  Junichi Tanabe ,  Hisatoshi Kura ,  Masaki Ohwa

发明人： Akira Matsumoto ,  Junichi Tanabe ,  Hisatoshi Kura ,  Masaki Ohwa

IPC分类号： G03F7/031 ,  G02B5/20

CPC分类号： G03F7/027 ,  C07D209/80 ,  C07D209/86 ,  C07D209/88 ,  C07D403/10 ,  C07D409/06 ,  C07D409/14 ,  G02B5/20 ,  G03F7/2002 ,  G03F7/2037 ,  G03F7/2039 ,  G03F7/30

摘要： Compounds of formula (I), (II), and (III), wherein R1, R2, R′2 and R′″2 for example are C1-C20alkyl, provided that at least one of R1, R2, R′2 and R′″2 carries a specified substituent; R3, R4, and R5 for example independently of one another are hydrogen or a defined substituent provided that at least one of R3, R4 or R5 is other than hydrogen or C1-C20alkyl; R6, R7, R8, R′7, RV, R′8, R″6, R″7, R′″6 and R′″7 for example independently of one another have one of the meanings as given for R3, R4, and R5; and R9 for example is C1-C20alkyl; exhibit an unexpectedly good performance in photopolymerization reactions.

摘要翻译： 式（I），（II）和（III）的化合物，其中R 1，R 2，R'2和R'2例如是C 1 -C 20烷基，条件是R 1，R 2，R'2和 R“2携带指定的取代基; R 3，R 4和R 5例如彼此独立地是氢或定义的取代基，条件是R 3，R 4或R 5中的至少一个不是氢或C 1 -C 20烷基; R6，R7，R8，R'7，RV，R'8，R“6，R”7，R“”6“和”7“，例如彼此独立地具有R 3，R 4 ，和R5; 例如，R 9为C 1 -C 20烷基; 在光聚合反应中表现出出人意料的良好性能。

公开(公告)号：US08664324B2

公开(公告)日：2014-03-04

申请号：US12999678

申请日：2009-06-10

申请人： Junichi Tanabe ,  Mamiko Takesue

发明人： Junichi Tanabe ,  Mamiko Takesue

IPC分类号： C09D153/00 ,  C08F283/01

CPC分类号： C08F293/00 ,  C08F2/38 ,  C08F4/00 ,  C08F293/005 ,  C08L53/00 ,  C09D153/00 ,  C08L2666/02

摘要： The present invention pertains to salt modified copolymers wherein one of the monomer units contains a quaternized N-atom structure with a polar substituent. The invention further relates to the use of said copolymers as dispersant especially for color filters. The copolymer is made by controlled polymerization or by conventional polymerization and comprises at least one monomer (MAr) selected from unsaturated monomers out of the group of acrylates, methacrylates, acrylamides, methacrylamides, styrenic monomers, at least one monomer (MBs) selected from unsaturated monomers out of the group of acrylates, methacrylates, acrylamides, methacrylamides, styrenic monomers wherein the monomer MB has a quaternized N-atom structure with a polar substituent selected from polyether, polyamine, nitrile, amide, imine, imide, ester, ketone, nitrile, aldehyde, diketone, ketoester, ketoamide, carbonate, carbamate, carbamide, sulfoxide, sulfone, carboxylic acid, sulfonic acid, phosphoric acid groups; or carboxylic acid anion, sulfonic acid anion or phosphoric acid anion groups which is formed as betaine structure r denotes the total number of monomers MA within the structural element (MAr) and r is >5, preferred 10-1000, most preferred 10-500; s denotes the total number of monomers MB within the structural element (MBs) and s is >1, preferred 2-100, most preferred 2-50.

摘要翻译： 本发明涉及盐改性共聚物，其中单体单元之一含有具有极性取代基的季铵化的N-原子结构。 本发明还涉及所述共聚物作为分散剂的用途，特别是用于滤色器。 共聚物通过受控聚合或通过常规聚合制备，并且包含至少一种选自丙烯酸酯，甲基丙烯酸酯，丙烯酰胺，甲基丙烯酰胺，苯乙烯类单体中的不饱和单体的单体（MAr），至少一种选自不饱和单体的单体（MB） 丙烯酸酯，甲基丙烯酸酯，丙烯酰胺，甲基丙烯酰胺，苯乙烯类单体中的单体，其中单体MB具有季铵化的N-原子结构，其具有选自聚醚，多胺，腈，酰胺，亚胺，酰亚胺，酯，酮，腈的极性取代基 ，醛，二酮，酮酯，酮酰胺，碳酸酯，氨基甲酸酯，脲，亚砜，砜，羧酸，磺酸，磷酸基团; 或羧酸阴离子，作为甜菜碱结构形成的磺酸阴离子或磷酸阴离子基团r表示结构元素（MAr）中单体MA的总数，r> 5，优选10-1000，最优选10-500 ; s表示结构单元（MB）中单体MB的总数，s表示> 1，优选2-100，最优选2-50。

公开(公告)号：US08524425B2

公开(公告)日：2013-09-03

申请号：US12598481

申请日：2008-04-28

申请人： Akira Matsumoto ,  Junichi Tanabe ,  Hisatoshi Kura ,  Masaki Ohwa

发明人： Akira Matsumoto ,  Junichi Tanabe ,  Hisatoshi Kura ,  Masaki Ohwa

IPC分类号： G02B5/20 ,  G03F7/031

CPC分类号： C07D409/06 ,  B33Y70/00 ,  C07D209/86 ,  C07D335/16 ,  C07D405/12 ,  C07D409/14 ,  C07D417/12

摘要： Compounds of the formula (I) and (II) M1, M2 and M3 independently of one another are no bond, a direct bond, CO, O, S, SO, SO2 or NR14; provided that at least one of M1, M2 or M3 is a direct bond, CO, O, S, SO, SO2 or NR14; M4 is a direct bond, CR″3R″4, CS, O, S, SO, or SO2; Y is S or NR18; R1 for example is hydrogen, C3-C8cycloalkyl, phenyl or napthyl, both of which are optionally substituted; R2 for example is C1-C20alkyl; R″2 has one of the meanings given for R2; R3 and R4 are for example hydrogen, halogen, C1-C20alkyl; R′3, R′4, R″3 and R″4 independently of one another have one of the meanings given for R3 and R4; and R5 is for example hydrogen, halogen, C1-C20alkyl; provided that in the compounds of the formula (I) at least two oxime ester groups are present and provided that at least one specified substituent R2 or R″2 is present; exhibit an unexpectedly good performance in photopolymerization reactions.

摘要翻译： 式（I）和（II）M1，M2和M3彼此独立的化合物不是键，直接键，CO，O，S，SO，SO 2或NR 14; 条件是M1，M2或M3中的至少一个是直接键，CO，O，S，SO，SO 2或NR 14; M4是直接键，CR''3R''4，CS，O，S，SO或SO2; Y为S或NR18; R 1例如是氢，C 3 -C 8环烷基，苯基或萘基，它们都是任选被取代的; R 2例如是C 1 -C 20烷基; R'2具有R2中给出的含义之一; R3和R4是例如氢，卤素，C1-C20烷基; R 3，R'4，R“3和R”4彼此独立地具有R3和R4给出的含义之一; R5是例如氢，卤素，C1-C20烷基; 条件是在式（I）的化合物中存在至少两个肟酯基团，条件是存在至少一个特定的取代基R 2或R“2; 在光聚合反应中表现出出人意料的良好性能。

公开(公告)号：US08413478B2

公开(公告)日：2013-04-09

申请号：US12092683

申请日：2005-11-04

申请人： Hidekazu Tomaru ,  Shinichi Taya ,  Masahiro Kai ,  Junichi Tanabe ,  Etsuro Tsutsumi ,  Norihito Saiki

发明人： Hidekazu Tomaru ,  Shinichi Taya ,  Masahiro Kai ,  Junichi Tanabe ,  Etsuro Tsutsumi ,  Norihito Saiki

IPC分类号： B21D22/20 ,  B21D22/00

CPC分类号： B21D22/28 ,  B21D22/30 ,  B21D51/26

摘要： A method of drawing and ironing a resin film laminated metal sheet for forming a can body having a bottom portion, a can wall portion and a flange-forming portion by drawing the resin film laminated metal sheet obtained by laminating at least one surface of a metal sheet with an organic resin film, followed by ironing by using a punch and a plurality of dies neighboring each other. The can wall is effectively prevented from being broken by a decrease in the thickness of the can wall, and drawn and ironed cans are efficiently formed having a thickness which is decreased as designed.

摘要翻译： 拉伸和熨烫用于形成具有底部，罐壁部分和凸缘形成部分的罐体的树脂膜层压金属片的方法，通过拉伸通过层压金属的至少一个表面获得的树脂膜层压金属片 使用有机树脂膜，然后使用冲头和彼此相邻的多个模具进行熨烫。 通过罐壁的厚度的减小有效地防止了罐壁被破坏，并且有效地形成具有按设计减小的厚度的拉丝和熨烫罐。

公开(公告)号：US08293592B2

公开(公告)日：2012-10-23

申请号：US12410836

申请日：2009-03-25

申请人： Junichi Tanabe

发明人： Junichi Tanabe

IPC分类号： H01L21/00

CPC分类号： H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/67109

摘要： A semiconductor device manufacturing method including: (a) loading into a chamber a substrate having at least an exposed silicon surface and an exposed surface of silicon oxide film or silicon nitride film on a substrate surface; (b) simultaneously supplying at least a first process gas containing silicon and a second process gas for etching into the chamber when the substrate inside the chamber is heated to a predetermined temperature; and (c) supplying into the chamber a third process gas having an etchability higher than the second process gas etchability. Steps (b) and (c) are performed at least once to selectively grow an epitaxial film on the exposed silicon surface of the substrate surface. A temperature of the substrate is maintained at the predetermined temperature from (b) to (c), and the temperature of the substrate is temporarily elevated above the predetermined temperature and then returned to the predetermined temperature in (c).

摘要翻译： 一种半导体器件制造方法，包括：（a）将具有至少暴露的硅表面的衬底和在衬底表面上的氧化硅膜或氮化硅膜的暴露表面加载到腔室中; （b）当室内的基板被加热到预定温度时，同时供应至少含有硅的第一工艺气体和用于蚀刻的第二工艺气体; 和（c）向腔室供应具有高于第二工艺气体蚀刻性的蚀刻性的第三工艺气体。 执行步骤（b）和（c）至少一次以选择性地在衬底表面的暴露的硅表面上生长外延膜。 将基板的温度保持在（b）〜（c）的规定温度，将基板的温度暂时升高到规定温度以上，然后返回到（c）中的规定温度。

公开(公告)号：US07989644B2

公开(公告)日：2011-08-02

申请号：US11921050

申请日：2006-05-22

申请人： Junichi Tanabe ,  Hidetaka Oka ,  Hiroshi Yamamoto

发明人： Junichi Tanabe ,  Hidetaka Oka ,  Hiroshi Yamamoto

IPC分类号： C07D307/91 ,  H01L51/50

CPC分类号： H01L51/0052 ,  C07D307/91 ,  C07D405/14 ,  C07D409/14 ,  C09K11/06 ,  C09K2211/1018 ,  C09K2211/1022 ,  C09K2211/1088 ,  H01L51/0054 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0073 ,  H05B33/14 ,  Y02E10/549 ,  Y10S428/917

摘要： Disclosed are electroluminescent devices that comprise organic layers that contain dibenzofuran compounds. The compounds are suitable components of, for example, blue-emitting, durable, organo-electroluminescent layers. The electroluminescent devices may be employed for full color display panels in, for example, mobile phones, televisions and personal computer screens.

摘要翻译： 公开了包含含有二苯并呋喃化合物的有机层的电致发光器件。 这些化合物是例如蓝色发光，耐久的有机电致发光层的合适组分。 电致发光器件可用于例如移动电话，电视机和个人计算机屏幕中的全彩显示面板。

公开(公告)号：US20100234484A1

公开(公告)日：2010-09-16

申请号：US12308520

申请日：2007-06-25

申请人： Carsten Schellenberg ,  Clemens Auschra ,  Wolfgang Peter ,  Frank Oliver Heinrich Pirrung ,  Junichi Tanabe

发明人： Carsten Schellenberg ,  Clemens Auschra ,  Wolfgang Peter ,  Frank Oliver Heinrich Pirrung ,  Junichi Tanabe

IPC分类号： C08F2/46

CPC分类号： C08F2/50 ,  C08F2/22 ,  C08K5/132 ,  C08K5/5397 ,  C08L33/12 ,  C08L2201/54 ,  G03F7/029 ,  G03F7/031

摘要： The invention relates to a concentrated aqueous polymer dispersion with an average particle size of less than 1000 nm comprising a) a polymer carrier prepared by heterophase radical polymerization of at least one ethylenically unsaturated monomer in the presence of b) a photoinitiator and/or photolatent catalyst and c) optionally a non-ionic, cationic or anionic surfactant, wherein the weight ratio of the photoinitiator and/or photolatent catalyst to the polymer carrier is greater than 20 parts of photoinitiator and/or photolatent catalyst per 100 parts of polymer carrier, preferably equal or greater than 35 parts of photoinitiator and/or photolatent catalyst per 100 parts of polymer carrier.

摘要翻译： 本发明涉及平均粒度小于1000nm的浓缩水性聚合物分散体，其包含a）在b）光引发剂和/或光催化剂存在下，通过至少一种烯键式不饱和单体的异相自由基聚合制备的聚合物载体 和c）任选的非离子，阳离子或阴离子表面活性剂，其中光引发剂和/或光催化剂催化剂与聚合物载体的重量比相对于每100份聚合物载体大于20份光引发剂和/或光潜催化剂，优选 等于或大于35份光引发剂和/或光潜催化剂/ 100份聚合物载体。

公开(公告)号：US20090263971A1

公开(公告)日：2009-10-22

申请号：US12410836

申请日：2009-03-25

申请人： Junichi Tanabe

发明人： Junichi Tanabe

IPC分类号： H01L21/465

CPC分类号： H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/67109

摘要： A method of manufacturing a semiconductor device comprises: (a) loading a substrate into a process chamber, wherein the substrate has at least a silicon exposure surface and an exposure surface of silicon oxide film or silicon nitride film on a substrate surface; (b) simultaneously supplying at least a first process gas containing silicon and a second process gas for etching into the process chamber under conditions that the substrate inside the process chamber is heated to a predetermined temperature; and (c) supplying a third process gas having a stronger etchability than the second process gas into the process chamber, wherein the operation (b) and the operation (c) are performed at least one or more times so that an epitaxial film is selectively grown on the silicon exposure surface of the substrate surface

摘要翻译： 一种制造半导体器件的方法包括：（a）将衬底加载到处理室中，其中所述衬底至少具有硅暴露表面和在衬底表面上的氧化硅膜或氮化硅膜的暴露表面; （b）在处理室内的基板被加热到预定温度的条件下，同时向处理室中同时供给至少含有硅的第一工艺气体和第二工艺气体用于蚀刻; 以及（c）将具有比第二工艺气体更强的蚀刻性的第三工艺气体供应到处理室中，其中操作（b）和操作（c）至少执行一次或多次，使得外延膜选择性地 生长在衬底表面的硅暴露表面上