公开(公告)号：US08946065B2

公开(公告)日：2015-02-03

申请号：US13661153

申请日：2012-10-26

Applicant: Tokyo Electron Limited

Inventor： Mitsuhiro Okada ,  Akinobu Kakimoto ,  Kazuhide Hasebe

IPC: H01L21/00 ,  H01L21/02 ,  C23C16/02 ,  C23C16/24 ,  C30B29/06 ,  C30B25/18

CPC classification number: H01L21/0245 ,  C23C16/0272 ,  C23C16/24 ,  C30B25/183 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262

Abstract: Provided is a method of forming a seed layer for forming a thin film, which is capable of further improving a thickness uniformity of the thin film. The method of forming a seed layer that is a seed of the thin film on a base includes adsorbing at least silicon included in an aminosilane-based gas on the base, by using the aminosilane-based gas; and depositing at least silicon included in a higher-order silane-based gas having an order that is equal to or higher than disilane on the base, on which at least the silicon included in the aminosilane-based gas is adsorbed, by using the higher-order silane-based gas having an order that is equal to or higher than the disilane.

Abstract translation: 提供了形成薄膜种子层的方法，其能够进一步提高薄膜的厚度均匀性。 在基材上形成作为薄膜种子的种子层的方法包括：使用氨基硅烷系气体，将至少包含在氨基硅烷系气体中的硅吸附在基材上。 并且至少含有氨基硅烷系气体中所含有的硅被吸附在基底上的至少具有等于或高于乙硅烷的高级硅烷系气体的硅，通过使用较高的 具有等于​​或高于乙硅烷的阶数的硅烷系气体。