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    Apparatus for forming silicon-containing thin film
    3.
    发明授权
    Apparatus for forming silicon-containing thin film 有权
    用于形成含硅薄膜的装置

    公开(公告)号：US09353442B2

    公开(公告)日：2016-05-31

    申请号：US14576410

    申请日：2014-12-19

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Mitsuhiro Okada ,  Akinobu Kakimoto ,  Kazuhide Hasebe

    IPC: C23C16/00 ,  C23C16/52 ,  C23C16/02 ,  C23C16/24 ,  C30B25/18 ,  C30B29/06 ,  H01L21/02

    CPC classification number: C23C16/52 ,  C23C16/0272 ,  C23C16/24 ,  C30B25/183 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262

    Abstract: Provided is an apparatus for forming a silicon-containing thin film, the apparatus including a controller which is configured to control a process gas supplying mechanism, a heating device, and an exhauster to perform: forming a first seed layer on a base by adsorbing at least silicon included in an aminosilane-based gas on the base, using the aminosilane-based gas; forming a second seed layer on the first seed layer by depositing at least silicon included in a higher-order silane-based gas having an order that is equal to or higher than disilane, using the higher-order silane-based gas having an order that is equal to or higher than the disilane, wherein the first seed layer and the second seed layer form a dual seed layer; and forming the silicon-containing thin film on the dual seed layer.

    Abstract translation: 提供了一种用于形成含硅薄膜的装置，该装置包括控制器，该控制器被配置为控制处理气体供给机构，加热装置和排气器，以执行：通过吸附在基底上形成第一种子层 使用基于氨基硅烷的气体在基体上的氨基硅烷系气体中含有最少的硅; 通过使用具有等于或高于乙硅烷的数量级的高级硅烷系气体中至少含有硅，通过使用具有以下顺序的高级硅烷系气体，形成第一籽晶层上的第二晶种层： 等于或高于所述乙硅烷，其中所述第一种子层和所述第二种子层形成双种子层; 并在双种子层上形成含硅薄膜。

    Method of forming a laminated semiconductor film
    4.
    发明授权
    Method of forming a laminated semiconductor film 有权
    形成层叠半导体膜的方法

    公开(公告)号：US09263318B2

    公开(公告)日：2016-02-16

    申请号：US13832453

    申请日：2013-03-15

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Mitsuhiro Okada

    IPC: H01L21/20 ,  H01L21/762 ,  H01L21/02 ,  H01L21/67

    CPC classification number: H01L21/76251 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02667 ,  H01L21/67109

    Abstract: According to some embodiments of the present disclosures, a method of forming a laminated semiconductor film is constituted by alternately laminating first and second semiconductor films on an underlying film of each of a plurality of substrates to be processed. The method includes performing a first operation of forming the first semiconductor film and a second operation of forming the second semiconductor film until a predetermined number of laminated films are obtained. In the method, a film forming temperature in the first operation and a film forming temperature in the second operation are set to be equal to each other, and temperatures between the first and second operations are set to be constant.

    Abstract translation: 根据本公开的一些实施例，形成叠层半导体膜的方法是通过在待处理的多个基板中的每一个的下面的膜上交替层叠第一和第二半导体膜而构成的。 该方法包括执行形成第一半导体膜的第一操作和形成第二半导体膜的第二操作，直到获得预定数量的层叠膜。 在该方法中，将第一操作中的成膜温度和第二操作中的成膜温度设定为彼此相等，并且将第一操作和第二操作之间的温度设定为恒定。

    Impurity diffusion method, substrate processing apparatus, and method of manufacturing semiconductor device
    5.
    发明授权
    Impurity diffusion method, substrate processing apparatus, and method of manufacturing semiconductor device 有权
    杂质扩散法，基板处理装置以及半导体装置的制造方法

    公开(公告)号：US08906792B2

    公开(公告)日：2014-12-09

    申请号：US13871297

    申请日：2013-04-26

    Applicant: Tokyo Electron Limited

    Inventor： Kazuya Takahashi ,  Yoshikazu Furusawa ,  Mitsuhiro Okada

    IPC: H01L21/22 ,  H01L21/223 ,  H01L21/28

    CPC classification number: H01L21/2236 ,  H01L21/28035

    Abstract: The impurity diffusion method includes: transferring an object on which the thin film is formed into a processing chamber (operation 1); raising a temperature of the object to a vapor diffusion temperature in the processing chamber (operation 3); and supplying an impurity-containing gas that contains the impurities into the processing chamber, together with an inert gas and diffusing the impurities in the thin film formed on the object of which the temperature is raised to the vapor diffusion temperature (operation 4), wherein in the operation 4, an impurity diffusion acceleration gas for accelerating the diffusion of the impurities into the thin film is supplied into the processing chamber, together with the impurity-containing gas and the inert gas.

    Abstract translation: 杂质扩散方法包括：将形成有薄膜的物体转印到处理室中（操作1）; 将物体的温度升高到处理室中的蒸气扩散温度（操作3）; 并将含有杂质的含杂质的气体与惰性气体一起供给到处理室中，并将形成在温度升高对象物上的薄膜中的杂质扩散到蒸气扩散温度（操作4），其中 在操作4中，用于加速杂质扩散到薄膜中的杂质扩散加速气体与含杂质气体和惰性气体一起被供应到处理室中。

    Substrate processing method and substrate processing apparatus
    7.
    发明授权
    Substrate processing method and substrate processing apparatus 有权

    公开(公告)号：US11551933B2

    公开(公告)日：2023-01-10

    申请号：US16781362

    申请日：2020-02-04

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Mitsuhiro Okada ,  Yasushi Fujii

    IPC: H01L21/44 ,  H01L21/285 ,  C23C16/46

    Abstract: According to one embodiment of the present disclosure, there is provided a substrate processing method including: providing a substrate; forming a seed layer on a surface of the substrate by heating a stage on which the substrate is placed to a first temperature and supplying a first source gas to the substrate; and forming a metal-containing film by heating the stage on which the substrate is placed to a second temperature and supplying a second source gas and a first reducing gas to the substrate on which the seed layer is formed.

    Method of manufacturing semiconductor device, and semiconductor manufacturing apparatus
    8.
    发明授权
    Method of manufacturing semiconductor device, and semiconductor manufacturing apparatus 有权

    公开(公告)号：US10529559B2

    公开(公告)日：2020-01-07

    申请号：US15624432

    申请日：2017-06-15

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Mitsuhiro Okada

    IPC: H01L21/02 ,  C23C16/24 ,  C23C16/455 ,  C23C16/52 ,  H01L21/3065 ,  H01L21/67

    Abstract: There is provided a method of manufacturing a semiconductor device, which includes: forming a silicon film inside a recess formed in a surface of a workpiece by supplying a film forming gas containing silicon to the workpiece; subsequently, supplying a process gas, which includes a halogen gas for etching the silicon film and a roughness suppressing gas for suppressing roughening of a surface of the silicon film after being etched by the halogen gas, to the workpiece; etching the silicon film formed on a side wall of the recess to enlarge an opening width of the recess by applying thermal energy to the process gas and activating the process gas; and subsequently, filling silicon into the recess by supplying the film forming gas to the workpiece and depositing silicon on the silicon film remaining in the recess.

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