BLOWER FAN UNIT
    32.
    发明申请
    BLOWER FAN UNIT 有权
    风扇风扇单元

    公开(公告)号:US20100290894A1

    公开(公告)日:2010-11-18

    申请号:US12719941

    申请日:2010-03-09

    IPC分类号: F04D17/08 F04D29/42

    CPC分类号: F04D17/08 F04D29/42

    摘要: A blower fan unit includes a housing, an impeller, an outlet, and a positioning mechanism. The impeller is mounted in the housing. The impeller rotates around a rotation center axis and generates an air current in a centrifugal direction from the rotation center axis. An outlet is formed in the housing and located in a centrifugal direction from the rotation center axis. A positioning mechanism is connected to the housing and makes the position of the housing change along the rotation center axis at each angular position around the rotation center axis.

    摘要翻译: 鼓风机单元包括壳体,叶轮,出口和定位机构。 叶轮安装在外壳中。 叶轮围绕旋转中心轴线旋转,并从旋转中心轴线沿离心方向产生气流。 出口形成在壳体中并且位于离旋转中心轴线的离心方向。 定位机构连接到壳体,并且使得壳体的位置沿着旋转中心轴线在围绕旋转中心轴线的每个角位置处改变。

    Incubator
    33.
    发明申请
    Incubator 有权
    孵化器

    公开(公告)号:US20100113864A1

    公开(公告)日:2010-05-06

    申请号:US12577478

    申请日:2009-10-12

    IPC分类号: A61G11/00

    摘要: In an incubator according to the present invention, a single incubator can be used in any state of four types of devices and thus obviates the need for having many types of devices. A canopy is lowered and raised. In addition to that, a left and right treatment door and a foot end treatment door can be located at their highest positions, lowest positions, and intermediate positions. Also, an infrared heater can be lowered and raised independently of the canopy. This makes it possible to switch the incubator among: a state of an open type incubator; a state of a closed type incubator in which the infrared heater is at its highest position such that the infrared heater can heat the canopy and others; a state of a closed type incubator in which the infrared heater is at its lowest position and this incubator is easily conveyable; and a state of a resuscitation treatment device.

    摘要翻译: 在根据本发明的培养箱中,单个培养箱可以用于四种类型装置的任何状态,从而避免需要具有多种类型的装置。 树冠被降低升高。 除此之外,左右处理门和脚端处理门可以位于其最高位置,最低位置和中间位置。 此外,红外加热器可以独立于雨篷降低和升高。 这使得可以将培养箱切换到:开放型培养箱的状态; 封闭式培养箱的状态,其中红外加热器处于其最高位置,使得红外加热器可以加热罩盖等; 封闭式培养箱的状态,其中红外加热器处于其最低位置,并且该培养箱易于输送; 以及复苏治疗装置的状态。

    SUPERCONDUCTING COIL AND SUPERCONDUCTING CONDUCTOR FOR USE THEREIN
    34.
    发明申请
    SUPERCONDUCTING COIL AND SUPERCONDUCTING CONDUCTOR FOR USE THEREIN 有权
    超导线圈及其使用的超导导体

    公开(公告)号:US20090093370A1

    公开(公告)日:2009-04-09

    申请号:US12293143

    申请日:2008-02-06

    IPC分类号: H01F6/06

    CPC分类号: H01F6/06

    摘要: The invention offers a superconducting coil that has the shape of a pancake formed by winding a superconducting conductor. The superconducting conductor is composed of a tape-shaped (Bi, Pb)2223-based superconducting wire and a tape-shaped thin-film RE123-based superconducting wire that are electrically connected in parallel with each other. The coil generates only a low voltage in the steady-operation state, limits the generated voltage to a low level even in a state where an external disturbance enters for some reason, and is therefore less susceptible to quenching. Consequently, the coil can be operated stably in both states. The invention also offers a superconducting conductor to be used to form the coil.

    摘要翻译: 本发明提供一种超导线圈,其具有通过缠绕超导导体形成的薄饼形状。 超导导体由彼此并联电连接的带状(Bi,Pb)2223基超导线和带状薄膜RE123基超导线构成。 线圈在稳定运行状态下仅产生低电压,即使在由于某种原因导致外部干扰进入的状态下也将发电电压限制在低电平,因此不易于淬火。 因此,能够以两种状态稳定地操作线圈。 本发明还提供一种用于形成线圈的超导导体。

    Method of producing oxide superconducting wire material, method of modifying oxide superconducting wire material,and oxide superconducting wire material
    35.
    发明申请
    Method of producing oxide superconducting wire material, method of modifying oxide superconducting wire material,and oxide superconducting wire material 审中-公开
    生产氧化物超导线材的方法,氧化物超导线材的改性方法和氧化物超导线材

    公开(公告)号:US20060048854A1

    公开(公告)日:2006-03-09

    申请号:US10540550

    申请日:2004-08-04

    IPC分类号: H01L39/24

    CPC分类号: H01L39/248

    摘要: A method of manufacturing an oxide superconducting wire according to the present invention comprises a step (S1, S2) of preparing a wire formed by covering raw material powder of an oxide superconductor with a metal (3) and a heat treatment step (S4, S6) of heat-treating the wire in a pressurized atmosphere having a total pressure of at least 1 MPa and less than 50 MPa in the heat treatment. At a heat-up time before the heat treatment in the heat treatment step (S4, S6), pressurization is started from a temperature reducing 0.2% yield strength of the metal (3) below the total pressure in the heat treatment. Thus, formation of voids between oxide superconducting crystals and blisters of the oxide superconducting wire is suppressed while the partial oxygen pressure can be readily controlled in the heat treatment, whereby the critical current density can be improved.

    摘要翻译: 根据本发明的制造氧化物超导线的方法包括制备通过用金属(3)和热处理步骤(S)覆盖氧化物超导体的原料粉末而形成的线的步骤(S1,S2) 4,S 6)在热处理中在总压力为至少1MPa且小于50MPa的加压气氛中进行热处理。 在热处理工序(S 4,S 6)的热处理前的加热时间,从在热处理中的总压力以下的金属(3)的0.2%屈服强度降低的温度开始加压。 因此,抑制氧化物超导结晶和氧化物超导线的起泡之间的空隙的形成,同时可以容易地在热处理中控制部分氧压力,从而可以提高临界电流密度。

    Electrooptical device, mounting structure, and electronic apparatus
    36.
    发明申请
    Electrooptical device, mounting structure, and electronic apparatus 有权
    电光装置,安装结构和电子设备

    公开(公告)号:US20060012745A1

    公开(公告)日:2006-01-19

    申请号:US11157051

    申请日:2005-06-20

    IPC分类号: G02F1/1345

    摘要: An electrooptical device includes a substrate that holds an electrooptical substance, a first substrate line and a second substrate line provided on the substrate, a semiconductor device provided on the substrate, a first input bump and a second input bump provided on a surface of the semiconductor device, the surface being close to the substrate, an output bump provided on the surface of the semiconductor device to be connected to the first substrate line, a base material mounted on the substrate, a first line provided on the base material to be electrically connected to the first input bump, and a second line provided on the base material to be electrically connected to the second input bump via the second substrate line.

    摘要翻译: 电光装置包括保持电光物质的基板,设置在基板上的第一基板线和第二基板线,设置在基板上的半导体装置,设置在半导体的表面上的第一输入凸块和第二输入凸块 器件,表面靠近衬底,设置在要连接到第一衬底线的半导体器件的表面上的输出凸起,安装在衬底上的基底材料,设置在要电连接的基底材料上的第一线 以及设置在所述基底材料上以经由所述第二基板线电连接到所述第二输入凸块的第二线。

    Semiconductor device provided with memory chips
    37.
    发明授权
    Semiconductor device provided with memory chips 有权
    具有存储芯片的半导体装置

    公开(公告)号:US06724668B2

    公开(公告)日:2004-04-20

    申请号:US10140104

    申请日:2002-05-08

    IPC分类号: G11C700

    摘要: In each of a plurality of memory chips in the semiconductor integrated circuit device, an address signal of a defective memory cell in a memory circuit is obtained by a pattern generation tester circuit and a repair analysis circuit, and stored in a replacement storage circuit. The address signal read out of the replacement storage circuit is set to a replacement-repair circuit, and the defective memory cell is replaced with a spare memory cell. The replacement of a defective memory cell with a spare memory cell is allowed even after packaging, so that the yield is increased. The test time is also reduced, as the plurality of memory chips are tested in parallel.

    摘要翻译: 在半导体集成电路装置中的多个存储芯片的每一个中,存储电路中的有缺陷的存储单元的地址信号通过图形生成测试器电路和修复分析电路获得,并存储在替换存储电路中。 从替换存储电路读出的地址信号被设置为替换修复电路,并且用备用存储单元替换有缺陷的存储单元。 即使在包装之后也允许用备用存储单元替换有缺陷的存储单元,从而提高产量。 随着并行测试多个存储器芯片,测试时间也减少了。

    Semiconductor memory device having refresh circuit
    38.
    发明授权
    Semiconductor memory device having refresh circuit 有权
    具有刷新电路的半导体存储器件

    公开(公告)号:US06697910B2

    公开(公告)日:2004-02-24

    申请号:US09987895

    申请日:2001-11-16

    IPC分类号: G06F1200

    CPC分类号: G11C11/406

    摘要: In a semiconductor memory device, a refresh circuit outputs a refresh command signal for executing refresh operation. The refresh circuit includes a command-signal activating circuit for activating the refresh command signal, and a determination circuit for determining whether the activated refresh command signal is to be output. The determination circuit determines that the activated refresh command signal is to be output when the semiconductor memory device is in a standby state. Thereby, the semiconductor memory device enables stable refresh operation to be executed.

    摘要翻译: 在半导体存储器件中,刷新电路输出用于执行刷新操作的刷新命令信号。 刷新电路包括用于激活刷新命令信号的命令信号激活电路,以及用于确定是否输出激活的刷新命令信号的确定电路。 确定电路确定当半导体存储器件处于待机状态时,输出激活的刷新命令信号。 因此,半导体存储器件能够执行稳定的刷新操作。

    Capacitor
    39.
    发明授权
    Capacitor 有权
    电容器

    公开(公告)号:US06452780B2

    公开(公告)日:2002-09-17

    申请号:US09750006

    申请日:2000-12-27

    IPC分类号: H01G220

    CPC分类号: H01G4/228 H01G4/105

    摘要: A capacitor including a ceramic body, a glass layer formed on each of opposite surfaces of the ceramic body, and a first metallic layer formed on the glass layer. Preferably, a lead terminal is connected to the first metallic layer or to a second metallic layer which is provided on the first metallic layer, by use of solder containing Pb in an amount of 2.5 wt. % or less. Preferably, a lead terminal which is plated with a substance containing Pb in an amount of 5 wt. % or less is soldered onto the first metallic layer or the second metallic layer.

    摘要翻译: 一种电容器,包括陶瓷体,形成在所述陶瓷体的每个相对表面上的玻璃层和形成在所述玻璃层上的第一金属层。 优选地,引线端子通过使用含有2.5重量%的Pb的焊料连接到设置在第一金属层上的第一金属层或第二金属层。 % 或更少。 优选地,电镀有含有5重量%的Pb的物质的引线端子。 %以下被焊接到第一金属层或第二金属层上。

    Semiconductor memory device of low power consumption
    40.
    发明授权
    Semiconductor memory device of low power consumption 失效
    半导体存储器件的功耗低

    公开(公告)号:US06434065B1

    公开(公告)日:2002-08-13

    申请号:US09911729

    申请日:2001-07-25

    IPC分类号: G11C700

    摘要: In order to change the precharging voltage level when the bit lines are in the floating state, current control circuits are provided for restricting a current supply amount to the bit lines in the standby state, for example. Data, of which the logic level is fixed, are read out, in the existence of a leak current, due to a change of the bit line voltage caused by this leak current and thereby, the existence of a minute leak current can be detected. Consequently, a semiconductor memory device with an extremely low standby current is implemented by precisely detecting a minute leak current of the bit lines and by repairing the leak current defect.

    摘要翻译: 为了在位线处于浮置状态时改变预充电电压电平,例如提供电流控制电路用于限制待机状态下的位线的电流供给量。 由于漏电流引起的位线电压的变化,在存在漏电流的情况下,读出固定有逻辑电平的数据,从而可以检测出微小漏电流的存在。 因此,具有极低待机电流的半导体存储器件通过精确检测位线的微小泄漏电流并修复泄漏电流缺陷来实现。