摘要:
The present invention relates to a pharmaceutical composition for treatment and/or prevention of cancer, which comprises, as an active ingredient, an antibody or fragment thereof having an immunological reactivity with a CAPRIN-1 protein or a fragment thereof comprising 7 or more consecutive amino acids.
摘要:
A blower fan unit includes a housing, an impeller, an outlet, and a positioning mechanism. The impeller is mounted in the housing. The impeller rotates around a rotation center axis and generates an air current in a centrifugal direction from the rotation center axis. An outlet is formed in the housing and located in a centrifugal direction from the rotation center axis. A positioning mechanism is connected to the housing and makes the position of the housing change along the rotation center axis at each angular position around the rotation center axis.
摘要:
In an incubator according to the present invention, a single incubator can be used in any state of four types of devices and thus obviates the need for having many types of devices. A canopy is lowered and raised. In addition to that, a left and right treatment door and a foot end treatment door can be located at their highest positions, lowest positions, and intermediate positions. Also, an infrared heater can be lowered and raised independently of the canopy. This makes it possible to switch the incubator among: a state of an open type incubator; a state of a closed type incubator in which the infrared heater is at its highest position such that the infrared heater can heat the canopy and others; a state of a closed type incubator in which the infrared heater is at its lowest position and this incubator is easily conveyable; and a state of a resuscitation treatment device.
摘要:
The invention offers a superconducting coil that has the shape of a pancake formed by winding a superconducting conductor. The superconducting conductor is composed of a tape-shaped (Bi, Pb)2223-based superconducting wire and a tape-shaped thin-film RE123-based superconducting wire that are electrically connected in parallel with each other. The coil generates only a low voltage in the steady-operation state, limits the generated voltage to a low level even in a state where an external disturbance enters for some reason, and is therefore less susceptible to quenching. Consequently, the coil can be operated stably in both states. The invention also offers a superconducting conductor to be used to form the coil.
摘要:
A method of manufacturing an oxide superconducting wire according to the present invention comprises a step (S1, S2) of preparing a wire formed by covering raw material powder of an oxide superconductor with a metal (3) and a heat treatment step (S4, S6) of heat-treating the wire in a pressurized atmosphere having a total pressure of at least 1 MPa and less than 50 MPa in the heat treatment. At a heat-up time before the heat treatment in the heat treatment step (S4, S6), pressurization is started from a temperature reducing 0.2% yield strength of the metal (3) below the total pressure in the heat treatment. Thus, formation of voids between oxide superconducting crystals and blisters of the oxide superconducting wire is suppressed while the partial oxygen pressure can be readily controlled in the heat treatment, whereby the critical current density can be improved.
摘要:
An electrooptical device includes a substrate that holds an electrooptical substance, a first substrate line and a second substrate line provided on the substrate, a semiconductor device provided on the substrate, a first input bump and a second input bump provided on a surface of the semiconductor device, the surface being close to the substrate, an output bump provided on the surface of the semiconductor device to be connected to the first substrate line, a base material mounted on the substrate, a first line provided on the base material to be electrically connected to the first input bump, and a second line provided on the base material to be electrically connected to the second input bump via the second substrate line.
摘要:
In each of a plurality of memory chips in the semiconductor integrated circuit device, an address signal of a defective memory cell in a memory circuit is obtained by a pattern generation tester circuit and a repair analysis circuit, and stored in a replacement storage circuit. The address signal read out of the replacement storage circuit is set to a replacement-repair circuit, and the defective memory cell is replaced with a spare memory cell. The replacement of a defective memory cell with a spare memory cell is allowed even after packaging, so that the yield is increased. The test time is also reduced, as the plurality of memory chips are tested in parallel.
摘要:
In a semiconductor memory device, a refresh circuit outputs a refresh command signal for executing refresh operation. The refresh circuit includes a command-signal activating circuit for activating the refresh command signal, and a determination circuit for determining whether the activated refresh command signal is to be output. The determination circuit determines that the activated refresh command signal is to be output when the semiconductor memory device is in a standby state. Thereby, the semiconductor memory device enables stable refresh operation to be executed.
摘要:
A capacitor including a ceramic body, a glass layer formed on each of opposite surfaces of the ceramic body, and a first metallic layer formed on the glass layer. Preferably, a lead terminal is connected to the first metallic layer or to a second metallic layer which is provided on the first metallic layer, by use of solder containing Pb in an amount of 2.5 wt. % or less. Preferably, a lead terminal which is plated with a substance containing Pb in an amount of 5 wt. % or less is soldered onto the first metallic layer or the second metallic layer.
摘要:
In order to change the precharging voltage level when the bit lines are in the floating state, current control circuits are provided for restricting a current supply amount to the bit lines in the standby state, for example. Data, of which the logic level is fixed, are read out, in the existence of a leak current, due to a change of the bit line voltage caused by this leak current and thereby, the existence of a minute leak current can be detected. Consequently, a semiconductor memory device with an extremely low standby current is implemented by precisely detecting a minute leak current of the bit lines and by repairing the leak current defect.