公开(公告)号：US20240105713A1

公开(公告)日：2024-03-28

申请号：US18519200

申请日：2023-11-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro TANAKA ,  Yutaka OKAZAKI

IPC: H01L27/07 ,  H01G4/008 ,  H01G4/10 ,  H01G4/40 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/94 ,  H05K1/18

CPC classification number: H01L27/0733 ,  H01G4/008 ,  H01G4/105 ,  H01G4/40 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/66477 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696 ,  H01L29/94 ,  H05K1/18 ,  H01L21/8258

Abstract: A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a large amount of on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device with high integration is provided. A novel capacitor is provided. The capacitor includes a first conductor, a second conductor, and an insulator. The first conductor includes a region overlapping with the second conductor with the insulator provided therebetween. The first conductor includes tungsten and silicon. The insulator includes a silicon oxide film that is formed by oxidizing the first conductor.

公开(公告)号：US20240038411A1

公开(公告)日：2024-02-01

申请号：US18486018

申请日：2023-10-12

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Ryosuke KIKUCHI ,  Manabu KANOU

IPC: H01B3/10 ,  H01G9/07 ,  H01G4/10 ,  H01G4/08

CPC classification number: H01B3/10 ,  H01G9/07 ,  H01G4/105 ,  H01G4/085

Abstract: A dielectric includes a composite oxide. The composite oxide has composition represented by CexAl1-xOk and is amorphous. In the composition represented by CexAl1-xOk, a requirement 0.400≤x

公开(公告)号：US09892853B2

公开(公告)日：2018-02-13

申请号：US15301737

申请日：2015-06-12

Applicant: Ferro Corporation

Inventor： Walter J. Symes, Jr. ,  Gregory R. Prinzbach ,  John J. Maloney ,  James E. Henry ,  Orville W. Brown ,  Srinivasan Sridharan ,  Yie-Shein Her ,  Stanley Wang ,  George E. Graddy, Jr. ,  George E. Sakoske

IPC: C04B35/465 ,  H01G4/12 ,  C04B35/626 ,  C04B35/478 ,  C04B35/475 ,  C04B35/468 ,  C04B35/453 ,  C04B35/22 ,  C04B35/16 ,  C04B35/195 ,  C04B35/18 ,  C04B35/622 ,  C04B35/64 ,  C03C8/18 ,  C09D5/24

CPC classification number: H01G4/129 ,  C03C8/18 ,  C04B35/16 ,  C04B35/18 ,  C04B35/195 ,  C04B35/22 ,  C04B35/453 ,  C04B35/465 ,  C04B35/468 ,  C04B35/4682 ,  C04B35/475 ,  C04B35/478 ,  C04B35/62218 ,  C04B35/6263 ,  C04B35/64 ,  C04B2235/3203 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3236 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3298 ,  C04B2235/3409 ,  C04B2235/3418 ,  C04B2235/3436 ,  C04B2235/445 ,  C04B2235/6025 ,  C04B2235/608 ,  C04B2235/72 ,  C04B2235/725 ,  C04B2235/77 ,  C09D5/24 ,  H01G4/105 ,  H01G4/12 ,  H01G4/1209 ,  H01G4/1227

Abstract: LTCC devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a matrix of titanates of alkaline earth metals, the matrix doped with at least one selected from rare-earth element, aluminum oxide, silicon oxide and bismuth oxide.

公开(公告)号：US09466425B2

公开(公告)日：2016-10-11

申请号：US14032277

申请日：2013-09-20

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Sumiyo Wakaki ,  Takahiro Sumi ,  Machiko Motoya

IPC: H05K3/24 ,  H05K1/09 ,  H05K3/40 ,  H01G4/10 ,  H05K1/11 ,  H05K3/46

CPC classification number: H01G4/105 ,  H05K1/111 ,  H05K3/246 ,  H05K3/4007 ,  H05K3/4629 ,  H05K2201/035 ,  H05K2203/1476

Abstract: A first paste film containing a metal powder and non-vitreous inorganic oxide is formed on a glass ceramic green sheet, and a second paste film containing a metal powder is formed on the first paste film to cover at least the edge portion of the first paste film. Then the glass ceramic green sheet and the first and second paste films are fired. As a result, a surface electrode is obtained, and then a plating layer is formed on the surface electrode. The second paste film contains less non-vitreous inorganic oxide than the first paste film and the abundance ratio of the non-vitreous inorganic oxide in the surface electrode is lower in a region bordering the plating layer than in a region bordering the glass ceramic layer at least in an edge portion of the surface electrode.

Abstract translation: 在玻璃陶瓷生片上形成含有金属粉末和非玻璃质无机氧化物的第一糊剂膜，在第一糊剂膜上形成含有金属粉末的第二糊剂膜，以至少覆盖第一糊剂的边缘部分 电影。 然后烧制玻璃陶瓷生片和第一和第二糊状膜。 结果，获得表面电极，然后在表面电极上形成镀层。 第二糊剂膜比第一糊状物膜含有较少的无玻璃质无机氧化物，并且表面电极中的非玻璃质无机氧化物的丰度比在与镀层相邻的区域中低于在与玻璃陶瓷层接壤的区域 最少在表面电极的边缘部分。

公开(公告)号：US09214259B2

公开(公告)日：2015-12-15

申请号：US14456440

申请日：2014-08-11

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Hiroshige Adachi ,  Seiji Fujita ,  Kazuhiro Kaneko ,  Satoru Adachi ,  Sadaaki Sakamoto

IPC: H01B3/12 ,  B32B7/02 ,  C04B35/20 ,  H01G4/30 ,  H01G4/12 ,  B32B18/00 ,  H05K1/02 ,  H05K3/46 ,  C04B35/462 ,  C04B35/478 ,  C04B35/626 ,  H01G4/10 ,  C04B35/443

CPC classification number: H01B3/12 ,  B32B7/02 ,  B32B18/00 ,  C03C3/064 ,  C03C4/16 ,  C03C8/20 ,  C03C12/00 ,  C04B35/20 ,  C04B35/443 ,  C04B35/462 ,  C04B35/478 ,  C04B35/62685 ,  C04B2235/3206 ,  C04B2235/3215 ,  C04B2235/3222 ,  C04B2235/3225 ,  C04B2235/3232 ,  C04B2235/3262 ,  C04B2235/3281 ,  C04B2235/3445 ,  C04B2235/3481 ,  C04B2235/36 ,  C04B2235/6025 ,  C04B2235/80 ,  C04B2237/341 ,  C04B2237/343 ,  C04B2237/62 ,  H01G4/105 ,  H01G4/12 ,  H01G4/1209 ,  H01G4/1218 ,  H01G4/129 ,  H01G4/30 ,  H05K1/024 ,  H05K3/4629 ,  H05K3/4688 ,  H05K2201/10371 ,  Y10T428/24942

Abstract: A composite laminated ceramic electronic component that includes co-fired low dielectric-constant ceramic layers and high dielectric-constant ceramic layers. The low dielectric-constant ceramic layers and the high dielectric-constant ceramic layers are each composed of a glass ceramic containing: a first ceramic composed of MgAl2O4 and/or Mg2SiO4; a second ceramic composed of BaO, RE2O3 (where RE is a rare-earth element), and TiO2; glass containing each of 44.0 to 69.0 weight % of RO (where R is an alkaline-earth metal), 14.2 to 30.0 weight % of SiO2, 10.0 to 20.0 weight % of B2O3, 0.5 to 4.0 weight % of Al2O3, 0.3 to 7.5 weight % of Li2O, and 0.1 to 5.5 weight % of MgO; and MnO. The content ratios of the glass, etc. are varied between the low dielectric-constant ceramic layers and the high dielectric-constant ceramic layers.

Abstract translation: 一种复合层压陶瓷电子元件，包括共烧低介电常数陶瓷层和高介电常数陶瓷层。 低介电常数陶瓷层和高介电常数陶瓷层各自由玻璃陶瓷组成，其包含：由MgAl 2 O 4和/或Mg 2 SiO 4组成的第一陶瓷; 由BaO，RE2O3（其中RE为稀土元素）和TiO 2组成的第二陶瓷; 包含44.0至69.0重量％的RO（其中R是碱土金属），14.2至30.0重量％的SiO 2，10.0至20.0重量％的B 2 O 3，0.5至4.0重量％的Al 2 O 3，0.3至7.5重量％的玻璃 ％的Li 2 O和0.1〜5.5重量％的MgO; 和MnO。 玻璃等的含量比在低介电常数陶瓷层和高介电常数陶瓷层之间变化。

公开(公告)号：US08867191B2

公开(公告)日：2014-10-21

申请号：US13205832

申请日：2011-08-09

Applicant: Martin Letz ,  Hans-Heinrich Gundelach ,  Holger Wegener

Inventor： Martin Letz ,  Hans-Heinrich Gundelach ,  Holger Wegener

IPC: H01G4/06 ,  C03C3/091 ,  H01G4/08 ,  C03B33/02 ,  C03B33/09 ,  H01G13/02 ,  H01G4/10 ,  C03C4/16 ,  H01G13/00 ,  C03B17/06

CPC classification number: H01G4/08 ,  B32B37/14 ,  C03B17/06 ,  C03B23/0006 ,  C03B33/0215 ,  C03B33/091 ,  C03B33/093 ,  C03C3/091 ,  C03C4/16 ,  H01G4/105 ,  H01G13/00 ,  H01G13/02 ,  Y10T156/1031

Abstract: A capacitor having a dielectric consisting of a glass layer with an alkali metal oxide content of at most 2 wt % and a thickness of at most 50 μm is provided. The capacitor includes at least two metal layers which are separated by the glass layer. The glass layer is preferably produced by a down-draw method or by an overflow down-draw fusion method.

Abstract translation: 提供具有由碱金属氧化物含量为2重量％以下且厚度为50μm以下的玻璃层构成的电介质的电容器。 电容器包括由玻璃层分离的至少两个金属层。 玻璃层优选通过下拉法或通过溢流下拉熔化法制造。

公开(公告)号：US08448313B2

公开(公告)日：2013-05-28

申请号：US13167751

申请日：2011-06-24

Applicant: Tatsuo Kunishi ,  Junichi Saito ,  Yoshinori Ueda ,  Akihiro Motoki

Inventor： Tatsuo Kunishi ,  Junichi Saito ,  Yoshinori Ueda ,  Akihiro Motoki

IPC: H01G4/30

CPC classification number: H01G4/105 ,  H01G4/1209 ,  H01G4/30 ,  H01L41/273 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49002

Abstract: Provided is a method for producing a ceramic body, which is capable of preventing the ingress of moisture into a void between a conductor and the ceramic body more effectively in the ceramic body including the conductor therein. Ingress of a supercritical fluid containing an oxide sol precursor is achieved into a void between an internal electrode layer and a ceramic laminate. After that, the oxide sol is turned into a gel, and subjected to a heat treatment, thereby filling the void between the internal electrode layer and the ceramic laminate with an oxide.

Abstract translation: 提供一种陶瓷体的制造方法，其能够防止在包含导体的陶瓷体中更有效地将水分进入导体和陶瓷体之间的空隙。 含有氧化物溶胶前体的超临界流体的入口被实现为内部电极层和陶瓷层压体之间的空隙。 之后，将氧化物溶胶变成凝胶，进行热处理，由氧化物填充内部电极层和陶瓷层叠体之间的空隙。

公开(公告)号：US20100068505A1

公开(公告)日：2010-03-18

申请号：US12518515

申请日：2007-12-10

Applicant: Bracht Hartmut ,  Sebastian Knebel

Inventor： Bracht Hartmut ,  Sebastian Knebel

IPC: B32B5/16 ,  B05D3/00 ,  B05D3/02 ,  B05D3/04

CPC classification number: C03C1/008 ,  B82Y30/00 ,  C01P2004/04 ,  C01P2004/64 ,  C01P2004/90 ,  C23C18/02 ,  C23C18/1212 ,  C23C18/1245 ,  C23C18/1266 ,  C23C18/1275 ,  C23C18/1279 ,  C23C18/1291 ,  C23C18/1295 ,  H01G4/105 ,  Y10T428/256

Abstract: A method for synthesis of germanium nanoparticles in thin SiO2 films comprising: preparing a solution comprising silicon esters, germaniumtetrachloride (GeCl4) or germanium esters, methyl- or higher alcohols, and water; applying the solution to a surface of a substrate; consolidating the solution on the surface of the substrate, thereby obtaining a glass comprising silicon dioxide and germanium dioxide; selectively reducing the germanium dioxide to form germanium nanoparticles.

Abstract translation: 一种用于在薄SiO 2膜中合成锗纳米颗粒的方法，包括：制备包含硅酯，四氯化锗（GeCl 4）或锗酯，甲基 - 或更高级醇和水的溶液; 将溶液施加到基材的表面; 将溶液固结在基材的表面上，从而获得包含二氧化硅和二氧化锗的玻璃; 选择性还原二氧化锗以形成锗纳米颗粒。

公开(公告)号：US20080297978A1

公开(公告)日：2008-12-04

申请号：US12181441

申请日：2008-07-29

Applicant: Satoshi OHAGA ,  Yasutaka SUGIMOTO

Inventor： Satoshi OHAGA ,  Yasutaka SUGIMOTO

IPC: H01G4/12

CPC classification number: H01G4/105 ,  H01G4/1227 ,  H01G4/30 ,  H05K1/0306 ,  H05K1/162 ,  H05K3/0029 ,  H05K2201/017 ,  H05K2203/171 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49004

Abstract: In a multilayer ceramic substrate having a built-in capacitor provided in a ceramic laminate including a plurality of ceramic layers laminated to each other, the built-in capacitor being formed of a first capacitor electrode, a second capacitor electrode, and one of the dielectric glass ceramic layers, the capacitance value of the built-in capacitor is adjusted by performing laser trimming of the first capacitor electrode. The one dielectric glass ceramic layer is made of a TiO2-based dielectric glass ceramic layer in which the amount of dielectric grains including TiO2 is about 10 percent to about 35 percent by volume.

Abstract translation: 在具有内置电容器的多层陶瓷基板中，所述内置电容器设置在包括彼此层叠的多个陶瓷层的陶瓷层叠体中，所述内置电容器由第一电容器电极，第二电容器电极和所述电介质 玻璃陶瓷层，通过对第一电容器电极进行激光微调来调节内置电容器的电容值。 一个电介质玻璃陶瓷层由TiO 2基电介质玻璃陶瓷层制成，其中包括TiO 2的电介质颗粒的量为约10体积％至约35体积％。

公开(公告)号：US20080236878A1

公开(公告)日：2008-10-02

申请号：US12076989

申请日：2008-03-26

Applicant: Seung Eun Lee ,  Yul Kyo Chung ,  Jung Won Lee ,  In Hyung Lee ,  Byung Ik Song

Inventor： Seung Eun Lee ,  Yul Kyo Chung ,  Jung Won Lee ,  In Hyung Lee ,  Byung Ik Song

IPC: H05K1/18 ,  H01G4/10 ,  H01G7/00

CPC classification number: H05K1/162 ,  H01G4/105 ,  H01G4/33 ,  H05K2201/0175 ,  H05K2201/0179 ,  Y10T29/435

Abstract: There is provided a thin film capacitor and a capacitor-embedded printed board improved in leakage current characteristics. A dielectric layer is formed of a BiZnNb-based amorphous metal oxide with a predetermined dielectric constant without being heat treated at a high temperature, and metallic phase bismuth of the BiZnNb-based amorphous metal oxide is adjusted in content to attain a desired dielectric constant. Also, another dielectric layer having a different content of metallic phase bismuth may be formed. The thin film capacitor including: a first electrode; a dielectric layer including a first dielectric film formed on the first electrode, the dielectric layer comprising a BiZnNb-based amorphous metal oxide; and a second electrode formed on the dielectric layer, wherein the BiZnNb-based amorphous metal oxide contains metallic phase bismuth.

Abstract translation: 提供了薄膜电容器和电容器嵌入式印刷电路板，改善了漏电流特性。 电介质层由具有预定介电常数的BiZnNb基非晶态金属氧化物形成，而不在高温下进行热处理，并且将BiZnNb基非晶态金属氧化物的金属相铋的含量调节到所需的介电常数。 此外，可以形成具有不同金属相铋含量的另一介质层。 所述薄膜电容器包括：第一电极; 介电层，包括形成在所述第一电极上的第一电介质膜，所述电介质层包含BiZnNb基非晶态金属氧化物; 以及形成在所述电介质层上的第二电极，其中所述BiZnNb基非晶态金属氧化物含有金属相铋。