公开(公告)号：US06876039B2

公开(公告)日：2005-04-05

申请号：US10739200

申请日：2003-12-19

Applicant: Masao Okihara

Inventor： Masao Okihara

IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8238 ,  H01L27/08 ,  H01L27/092 ,  H01L27/12 ,  H01L29/786 ,  H01L31/119

CPC classification number: H01L27/1203

Abstract: The dependency of threshold voltage on adjusted bias voltage is varied between N-channel and P-channel MOSFETs. A support substrate, an insulating layer on the support substrate, and island-shaped first and second silicon layers separately formed on the insulating layer; a first MOSFET formed of a fully depleted SOI where a first channel part is formed in a first silicon layer; and a second MOSFET formed of a partially depleted SOI where a second channel part is formed in a second silicon layer, the second MOSFET configures a complementary MOSFET with the first MOSFET, are provided. The threshold voltage of the second MOSFET formed of the partially depleted SOI is hardly varied because of a neutral region in the second channel part, although bias voltage is applied to the support substrate to vary the threshold voltage of the first MOSFET formed of the fully depleted SOI.

Abstract translation: 阈值电压对调整偏置电压的依赖性在N沟道和P沟道MOSFET之间变化。 支撑基板，支撑基板上的绝缘层和分别形成在绝缘层上的岛状的第一和第二硅层; 由完全耗尽的SOI形成的第一MOSFET，其中第一沟道部分形成在第一硅层中; 以及由部分耗尽的SOI形成的第二MOSFET，其中第二沟道部分形成在第二硅层中，第二MOSFET配置与第一MOSFET的互补MOSFET。 由于部分耗尽的SOI形成的第二MOSFET的阈值电压几乎不变化，因为第二通道部分中的中性区域，尽管偏压被施加到支撑衬底以改变由完全耗尽的第一MOSFET形成的第一MOSFET的阈值电压 所以我。