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公开(公告)号：US20080080231A1
公开(公告)日：2008-04-03
申请号：US11848864
申请日：2007-08-31
申请人： Keiko Abe , Takahiro Hirai , Shiho Nakamura , Hirofumi Morise , Mototsugu Hamada
发明人： Keiko Abe , Takahiro Hirai , Shiho Nakamura , Hirofumi Morise , Mototsugu Hamada
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C14/0081
摘要： A nonvolatile latch circuit includes: a first gate part controlling to load or intercept an input signal based on a gate signal; a first logic gate functioning as an inverter or a gate outputting a constant voltage in response to the first control signal; a second logic gate functioning as an inverter or a gate outputting the constant voltage in response to the first control signal; a second gate part controlling to load or intercept the output of the second logic gate based on an inverted signal of the gate signal and sends the output of the second logic gate to an first input terminal of the first logic gate; and first and second injection type MTJ elements provided between the driving power supply and the first and second logic gates and changing in resistance depending upon a current flow direction.
摘要翻译： 非易失性锁存电路包括：第一栅极部分，其基于栅极信号控制输入信号的加载或截取; 用作反相器的第一逻辑门或响应于第一控制信号输出恒定电压的栅极; 用作反相器的第二逻辑门或响应于第一控制信号输出恒定电压的栅极; 第二栅极部分，用于基于所述栅极信号的反相信号来加载或截取所述第二逻辑门的输出，并将所述第二逻辑门的输出发送到所述第一逻辑门的第一输入端; 以及设置在驱动电源和第一和第二逻辑门之间的第一和第二注入型MTJ元件，并根据电流流动方向改变电阻。
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32.发明申请公开(公告)号：US20070057278A1
公开(公告)日：2007-03-15
申请号：US11517559
申请日：2006-09-08
IPC分类号： H01L29/74
CPC分类号： G11C11/16 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/71 , H01H1/0094 , Y10S977/725 , Y10S977/943
摘要： A magnetic switching element according to an example of the present invention includes a magnetic element, first and second electrodes which put the magnetic element therebetween, a current control section which is connected to the first and second electrodes, the current control section controlling a magnetization direction of a magnetization free section in such a manner that a current is made to flow between the magnetization free section and the magnetization fixed section, a movable conductive tube having a fixed end and a free end, and a third electrode connected to the fixed end of the conductive tube. A switching operation is performed in such a manner that a spatial position of the conductive tube is caused to change depending on the magnetization direction of the magnetization free section.
摘要翻译： 根据本发明的实施例的磁性开关元件包括磁性元件，将磁性元件放置在其间的第一和第二电极，连接到第一和第二电极的电流控制部分，电流控制部分控制磁化方向 的无磁化部分，使得电流在磁化自由部分和磁化固定部分之间流动，具有固定端和自由端的可移动导电管和连接到固定端的固定端的第三电极 导电管。 以使得导电管的空间位置根据磁化自由部的磁化方向而变化的方式进行切换操作。
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公开(公告)号：US08085582B2
公开(公告)日：2011-12-27
申请号：US12216918
申请日：2008-07-11
CPC分类号： G11C11/22 , G11B5/66 , G11C11/16 , G11C11/161 , G11C11/1675
摘要： A magnetic recording device includes: a laminated body including: a first ferromagnetic layer with a magnetization substantially fixed in a first direction; a second ferromagnetic layer with a variable magnetization direction; a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer; and a third ferromagnetic layer with a variable magnetization direction. The magnetization direction of the second ferromagnetic layer is determinable in response to the orientation of a current, by allowing electrons spin-polarized by passing a current in a direction generally perpendicular to the film plane of the layers of the laminated body to act on the second ferromagnetic layer, and by allowing a magnetic field generated by precession of the magnetization of the third ferromagnetic layer to act on the second ferromagnetic layer.
摘要翻译： 磁记录装置包括：层叠体，包括：第一铁磁层，其具有基本上沿第一方向固定的磁化; 具有可变磁化方向的第二铁磁层; 设置在所述第一铁磁层和所述第二铁磁层之间的第一非磁性层; 和具有可变磁化方向的第三铁磁层。 第二铁磁层的磁化方向可以响应于电流的取向而被确定，通过使电子通过沿着大体上垂直于层叠体的层的膜平面的方向的电流进行自旋极化来作用于第二 铁磁层，并且通过允许由第三铁磁层的磁化进行而产生的磁场作用在第二铁磁层上。
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公开(公告)号：US08077509B2
公开(公告)日：2011-12-13
申请号：US12320955
申请日：2009-02-10
IPC分类号： G11C11/15
CPC分类号： G11B25/04 , G11C11/161 , G11C11/1659 , G11C11/1675
摘要： A magnetic memory is provided with a memory cell. The memory cell includes a magnetic recording element, an interconnection to generate a radio-frequency current-induced magnetic field and a ground line. The magnetic recording element is provided with a first magnetic layer whose magnetization direction is substantially fixed, a magnetic recording layer whose magnetization direction is substantially reversed by spin-polarized electrons passing through the magnetic recording layer and a first nonmagnetic layer provided between the first magnetic layer and the magnetic recording layer. The interconnection is provided above the magnetic recording element to generate a radio-frequency current-induced magnetic field acting in a direction substantially perpendicular to a magnetization easy axis of the magnetic recording layer. The ground line is provided on a side opposite to the magnetic recording element with respect to the interconnection.
摘要翻译： 磁存储器设置有存储单元。 存储单元包括磁记录元件，用于产生射频电流感应磁场和接地线的互连。 磁记录元件设置有其磁化方向基本上固定的第一磁性层，其磁化方向基本上由通过磁记录层的自旋极化电子反转的磁记录层和设置在第一磁性层之间的第一非磁性层 和磁记录层。 互连设置在磁记录元件的上方，以产生沿与磁记录层的易磁化轴基本垂直的方向作用的射频电流感应磁场。 接地线相对于互连设置在与磁记录元件相对的一侧上。
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公开(公告)号：US07931976B2
公开(公告)日：2011-04-26
申请号：US12285429
申请日：2008-10-03
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , Y10T428/11 , Y10T428/1121 , Y10T428/1143 , Y10T428/115
摘要： A magnetic recording element includes a multilayer having a surface and a pair of electrodes. The multilayer has a first magnetic fixed layer whose magnetization is substantially fixed in a first direction substantially perpendicular to the surface. The multilayer also has a second magnetic fixed layer whose magnetization is substantially fixed in a second direction opposite to the first direction substantially perpendicular to the surface. A third magnetic layer is provided between the first and second magnetic layers. The direction of magnetization of the third ferromagnetic layer is variable. A first intermediate layer is provided between the first and the third magnetic layers. A second intermediate layer is provided between the second and the third magnetic layers. The pair of electrodes is capable of supplying an electric current flowing in a direction substantially perpendicular to the surface to the multilayer. The sectional area taken parallel to the surface at a thickness midpoint of the first magnetic layer is larger than that of the second magnetic layer.
摘要翻译： 磁记录元件包括具有表面和一对电极的多层。 多层具有第一磁性固定层，其磁化基本上在基本垂直于表面的第一方向固定。 多层还具有第二磁性固定层，其磁化基本上固定在与基本上垂直于表面的第一方向相反的第二方向上。 第三磁性层设置在第一和第二磁性层之间。 第三铁磁层的磁化方向是可变的。 第一中间层设置在第一和第三磁性层之间。 第二中间层设置在第二和第三磁性层之间。 该对电极能够将与表面大致垂直的方向流动的电流供给到多层。 在第一磁性层的厚度中点平行于表面截取的截面积大于第二磁性层的截面面积。
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36.发明授权公开(公告)号：US07710690B2
公开(公告)日：2010-05-04
申请号：US11090074
申请日：2005-03-28
申请人： Shiho Nakamura , Shigeru Haneda , Hirofumi Morise
发明人： Shiho Nakamura , Shigeru Haneda , Hirofumi Morise
IPC分类号： G11B5/33
CPC分类号： G11B5/39
摘要： A magneto-resistance effect element can obtain a high output and makes it possible to stabilize magnetization in a magnetization free layer therein even if a sense current is caused to flow. The magneto-resistance effect element is provided with a magnetization free layer whose magnetization direction is variable, a magnetization pinned layer whose magnetization direction is pinned, and an intermediate layer provided between the magnetization free layer and the magnetization pinned layer, where when no external magnetic field is present and no current flows, the magnetization direction in the magnetization free layer is anti-parallel to the magnetization direction pinned in the magnetization pinned layer, an easy axis of magnetization in the magnetization free layer is parallel to the magnetization direction pinned in the magnetization pinned layer, and a sense current flows from the magnetization free layer to the magnetization pinned layer.
摘要翻译： 磁阻效应元件可以获得高输出，并且使得即使使感测电流流动，也可以使其在无磁化层中的磁化稳定。 磁阻效应元件具有磁化方向可变的磁化自由层，其磁化方向被钉扎的磁化钉扎层以及设置在磁化自由层和磁化固定层之间的中间层，其中当没有外部磁 磁场存在，没有电流流动，磁化自由层中的磁化方向与磁化被钉扎层中钉扎的磁化方向反平行，磁化自由层的易磁化轴平行于在 磁化固定层，感测电流从磁化自由层流向磁化固定层。
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公开(公告)号：US07606096B2
公开(公告)日：2009-10-20
申请号：US11872264
申请日：2007-10-15
申请人： Mototsugu Hamada , TakahirO Hirai , Shiho Nakamura , Hirofumi Morise , Keiko Abe
发明人： Mototsugu Hamada , TakahirO Hirai , Shiho Nakamura , Hirofumi Morise , Keiko Abe
CPC分类号： G11C13/00 , G11C5/14 , G11C13/004 , G11C13/0069 , G11C14/009 , G11C2013/0042 , G11C2013/0054 , G11C2013/0073
摘要： A semiconductor integrated circuit device, has a first variable resistor element and a second variable resistor element whose resistances are changed complementarily depending on a current; and a current path switching circuit that supplies said current from a power supply by switching between current paths according to whether a normal operation mode or a read mode is input externally, wherein said power supply is turned off and then turned on again in said normal operation mode, and in this state, data corresponding to the relationship between the magnitudes of the resistances of said first variable resistor element and said second variable resistor element is read in said read mode.
摘要翻译： 半导体集成电路器件具有第一可变电阻器元件和第二可变电阻器元件，其电阻根据电流互补地改变; 以及电流路径切换电路，其通过根据正常操作模式还是读取模式在电流路径之间切换来从电源提供所述电流，其中所述电源在所述正常操作中被关闭然后再次导通 模式，并且在该状态下，在所述读取模式中读取与所述第一可变电阻元件和所述第二可变电阻元件的电阻的大小之间的关系对应的数据。
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公开(公告)号：US20090213638A1
公开(公告)日：2009-08-27
申请号：US12379402
申请日：2009-02-20
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08
摘要： A magnetic memory element is provided with first and second ferromagnetic fixed layers, a ferromagnetic memory layer, nonmagnetic first and second intermediate layers. The memory layer is disposed between the first and second fixed layers, and has a variable magnetization direction. In order to cancel asymmetry of a write-in current of the element, the element is provided so that the memory layer receives a larger perpendicular stray field from the first fixed layer than from the second fixed layer, and then a magnetization direction of a portion of the memory layer being nearest to the first intermediate layer and the magnetization direction of the first fixed layer are antiparallel to each other whenever a magnetization direction of a portion of the memory layer being nearest to the second intermediate layer and the magnetization direction of the second fixed layer are parallel to each other, and vice versa.
摘要翻译： 磁存储元件设置有第一和第二铁磁固定层，铁磁存储层，非磁性第一和第二中间层。 存储层设置在第一和第二固定层之间，具有可变的磁化方向。 为了消除元件的写入电流的不对称性，提供元件，使得存储层从第一固定层接收比来自第二固定层的更大的垂直杂散场，然后接收部分的磁化方向 所述存储层的最靠近所述第一中间层的磁化方向和所述第一固定层的磁化方向在所述存储层的一部分的磁化方向最接近所述第二中间层的磁化方向和所述第二中间层的磁化方向相互反平行时， 固定层彼此平行，反之亦然。
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公开(公告)号：US20090015958A1
公开(公告)日：2009-01-15
申请号：US12216918
申请日：2008-07-11
CPC分类号： G11C11/22 , G11B5/66 , G11C11/16 , G11C11/161 , G11C11/1675
摘要： A magnetic recording device includes: a laminated body including: a first ferromagnetic layer with a magnetization substantially fixed in a first direction; a second ferromagnetic layer with a variable magnetization direction; a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer; and a third ferromagnetic layer with a variable magnetization direction. The magnetization direction of the second ferromagnetic layer is determinable in response to the orientation of a current, by allowing electrons spin-polarized by passing a current in a direction generally perpendicular to the film plane of the layers of the laminated body to act on the second ferromagnetic layer, and by allowing a magnetic field generated by precession of the magnetization of the third ferromagnetic layer to act on the second ferromagnetic layer.
摘要翻译： 磁记录装置包括：层叠体，包括：第一铁磁层，其具有基本上沿第一方向固定的磁化; 具有可变磁化方向的第二铁磁层; 设置在所述第一铁磁层和所述第二铁磁层之间的第一非磁性层; 和具有可变磁化方向的第三铁磁层。 第二铁磁层的磁化方向可以响应于电流的取向而被确定，通过使电流通过沿着大体上垂直于层叠体的层的膜平面的方向的电流进行自旋极化以作用于第二铁磁层 铁磁层，并且通过允许由第三铁磁层的磁化进行而产生的磁场作用在第二铁磁层上。
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公开(公告)号：US20080298117A1
公开(公告)日：2008-12-04
申请号：US11872264
申请日：2007-10-15
申请人： Mototsugu Hamada , Takahiro Hirai , Shiho Nakamura , Hirofumi Morise , Keiko Abe
发明人： Mototsugu Hamada , Takahiro Hirai , Shiho Nakamura , Hirofumi Morise , Keiko Abe
IPC分类号： G11C11/34
CPC分类号： G11C13/00 , G11C5/14 , G11C13/004 , G11C13/0069 , G11C14/009 , G11C2013/0042 , G11C2013/0054 , G11C2013/0073
摘要： A semiconductor integrated circuit device, has a first variable resistor element and a second variable resistor element whose resistances are changed complementarily depending on a current; and a current path switching circuit that supplies said current from a power supply by switching between current paths according to whether a normal operation mode or a read mode is input externally, wherein said power supply is turned off and then turned on again in said normal operation mode, and in this state, data corresponding to the relationship between the magnitudes of the resistances of said first variable resistor element and said second variable resistor element is read in said read mode.
摘要翻译： 半导体集成电路器件具有第一可变电阻器元件和第二可变电阻器元件，其电阻根据电流互补地改变; 以及电流路径切换电路，其通过根据正常操作模式还是读取模式在电流路径之间切换来从电源提供所述电流，其中所述电源在所述正常操作中被关闭然后再次导通 模式，并且在该状态下，在所述读取模式中读取与所述第一可变电阻元件和所述第二可变电阻元件的电阻的大小之间的关系对应的数据。
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