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公开(公告)号：US08092599B2
公开(公告)日：2012-01-10
申请号：US11827133
申请日：2007-07-10
IPC分类号： C23C16/00 , C23C16/455 , H01L21/306
CPC分类号： C23C16/45589
摘要： A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets. A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector, and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation.
摘要翻译： 提供了一种用于在旋转盘化学气相沉积反应系统中在晶片上均匀沉积材料层的系统和方法，其中一个或多个衬底围绕轴线在载体上旋转，同时保持所述一个或多个衬底的表面基本上垂直于 旋转轴线并沿着旋转轴向上游方向。 在旋转期间，第一气体沿着下游方向从第一组气体入口朝向一个或多个基板排出。 第二气体沿下游方向从至少一个可移动气体喷射器朝向一个或多个基板排出，并且至少一个可移动气体入口以径向方向的运动分量朝向或远离旋转轴线移动 。
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公开(公告)号：US20090017190A1
公开(公告)日：2009-01-15
申请号：US11827133
申请日：2007-07-10
IPC分类号： C23C16/00
CPC分类号： C23C16/45589
摘要： A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets. A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector, and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation.
摘要翻译： 提供了一种用于在旋转盘化学气相沉积反应系统中在晶片上均匀沉积材料层的系统和方法，其中一个或多个衬底围绕轴线在载体上旋转，同时保持所述一个或多个衬底的表面基本上垂直于 旋转轴线并沿着旋转轴向上游方向。 在旋转期间，第一气体沿着下游方向从第一组气体入口朝向一个或多个基板排出。 第二气体沿下游方向从至少一个可移动气体喷射器朝向一个或多个基板排出，并且至少一个可移动气体入口以径向方向的运动分量朝向或远离旋转轴线移动 。
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公开(公告)号：US07452125B2
公开(公告)日：2008-11-18
申请号：US11894453
申请日：2007-08-21
CPC分类号： G01J5/0003 , G01J5/522
摘要： A system and method for calibrating a pyrometer used in temperature detection in a chemical vapor deposition system is provided. A calibration wafer with a reference region including a metal such as Al or Ag for forming a eutectic, and an exposed non-reference region without such a metal, are provided. Reflectivity measurements are taken from the reference region, and temperature measurements are taken from the non-reference region, over a range of temperatures including a known melting point for the metal eutectic. The pyrometer is calibrated based on the correlation of the known eutectic melting point with the change in reflectivity data obtained in the reference region, in light of the temperature data obtained from the non-reference region.
摘要翻译： 提供了用于校准化学气相沉积系统中用于温度检测的高温计的系统和方法。 提供具有包括用于形成共晶的诸如Al或Ag的金属的参考区域的校准晶片，以及没有这种金属的暴露的非参考区域。 反射率测量取自参考区域，温度测量取自非参考区域，在包括金属共晶体的已知熔点的温度范围内。 根据从非参考区获得的温度数据，基于已知共晶熔点与在参考区域中获得的反射率数据的变化的相关性校正高温计。
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公开(公告)号：US06368404B1
公开(公告)日：2002-04-09
申请号：US09298079
申请日：1999-04-23
IPC分类号： C30B2512
摘要： A chemical vapor deposition reactor includes a pancake type induction heating device to achieve operating temperature within the reactor chamber. By design of the susceptor, the induction magnetic force created at the top surface of the susceptor is insufficient to effect levitation of the wafer carrier during epitaxial deposition at high temperatures in the order of about 1500-1800° C.
摘要翻译： 化学气相沉积反应器包括一个薄饼型感应加热装置，以实现反应室内的工作温度。 通过感受器的设计，在基座的顶表面处产生的感应磁力不足以在大约1500-1800℃的高温下进行外延沉积期间实现晶片载体的悬浮。
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公开(公告)号：US5835677A
公开(公告)日：1998-11-10
申请号：US724766
申请日：1996-10-03
申请人： Ting Kai Li , Alexander I. Gurary , Dane C. Scott
发明人： Ting Kai Li , Alexander I. Gurary , Dane C. Scott
IPC分类号： C23C16/448 , C23C14/26
CPC分类号： C23C16/4486
摘要： A liquid vaporizer apparatus and method for chemical vapor deposition of liquid solutions into a controlled atmosphere of a CVD reaction chamber. The apparatus comprises an atomizer, gas curtain, heated porous media disks and a carrier gas mixer. The invention provides for the independent control of temperature, pressure and precursor stoichiometry during the atomizing and vaporization process thereby rendering the precise precursor vapor quality and quantity required for a given application. The invention employs the use of removable porous media disks which may be varied according to the desired operating pressure and precursors. In operation, the apparatus provides for a liquid precursor to first be atomized into a mist using an ultrasonic nozzle, then vaporized by heated media disks, and mixed with a carrier gas, then forced into CVD reaction chamber.
摘要翻译： 一种用于将液体溶液化学气相沉积到CVD反应室的受控气氛中的液体蒸发器装置和方法。 该装置包括雾化器，气幕，加热的多孔介质盘和载气混合器。 本发明提供了在雾化和蒸发过程期间对温度，压力和前体化学计量的独立控制，从而使得给定应用所需的精确的前体蒸气质量和数量。 本发明使用可移除的多孔介质盘，其可以根据期望的操作压力和前体而变化。 在操作中，该装置提供液体前体，首先使用超声波喷嘴雾化成雾，然后通过加热的介质盘蒸发，并与载气混合，然后被迫进入CVD反应室。
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公开(公告)号：US08562746B2
公开(公告)日：2013-10-22
申请号：US12968900
申请日：2010-12-15
申请人： Alexander I. Gurary , Joseph Arthur Kraus , Ajit Paranjpe , William E. Quinn , David Albert Crewe
发明人： Alexander I. Gurary , Joseph Arthur Kraus , Ajit Paranjpe , William E. Quinn , David Albert Crewe
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/4584 , C23C16/4585 , C23C16/4586 , H01L21/67754 , H01L21/68707 , H01L21/6875 , H01L21/68764 , H01L21/68771
摘要： A structure for a chemical vapor deposition reactor includes a support element defining oppositely-facing substantially planar upper and lower surfaces and a vertical rotational axis substantially perpendicular to the upper and lower surfaces, and a plurality of carrier sections releasably engaged with the support element. Each carrier section can include oppositely-facing substantially planar top and bottom surfaces and at least one aperture extending between the top and bottom surfaces. The carrier sections can be disposed on the support element with the bottom surfaces of the carrier sections facing toward the upper surface of the support element, so that wafers can be held in the apertures of the carrier sections with one surface of each wafer confronting the support element and an opposite surface exposed at the top surface of the carrier sections.
摘要翻译： 用于化学气相沉积反应器的结构包括限定相对面对的基本平坦的上表面和下表面的支撑元件和基本上垂直于上表面和下表面的垂直旋转轴线，以及与支撑元件可释放地接合的多个承载部件。 每个载体部分可以包括相对面对的基本平坦的顶部和底部表面以及在顶部和底部表面之间延伸的至少一个孔。 载体部分可以设置在支撑元件上，其中承载部分的底表面朝向支撑元件的上表面，使得晶片可以保持在载体部分的孔中，每个晶片的一个表面面对支撑件 元件和暴露在载体部分的顶表面处的相对表面。
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公开(公告)号：USD686175S1
公开(公告)日：2013-07-16
申请号：US29416224
申请日：2012-03-20
申请人： Alexander I. Gurary , Keng Moy , Paul Chang
设计人： Alexander I. Gurary , Keng Moy , Paul Chang
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公开(公告)号：US20120156374A1
公开(公告)日：2012-06-21
申请号：US12968900
申请日：2010-12-15
申请人： Alexander I. Gurary , Joseph Arthur Kraus , Ajit Paranjpe , William E. Quinn , David Albert Crewe
发明人： Alexander I. Gurary , Joseph Arthur Kraus , Ajit Paranjpe , William E. Quinn , David Albert Crewe
IPC分类号： C23C16/458 , C23C16/46
CPC分类号： C23C16/4584 , C23C16/4585 , C23C16/4586 , H01L21/67754 , H01L21/68707 , H01L21/6875 , H01L21/68764 , H01L21/68771
摘要： A structure for a chemical vapor deposition reactor includes a support element defining oppositely-facing substantially planar upper and lower surfaces and a vertical rotational axis substantially perpendicular to the upper and lower surfaces, and a plurality of carrier sections releasably engaged with the support element. Each carrier section can include oppositely-facing substantially planar top and bottom surfaces and at least one aperture extending between the top and bottom surfaces. The carrier sections can be disposed on the support element with the bottom surfaces of the carrier sections facing toward the upper surface of the support element, so that wafers can be held in the apertures of the carrier sections with one surface of each wafer confronting the support element and an opposite surface exposed at the top surface of the carrier sections.
摘要翻译： 用于化学气相沉积反应器的结构包括限定相对面对的基本平坦的上表面和下表面的支撑元件和基本上垂直于上表面和下表面的垂直旋转轴线，以及与支撑元件可释放地接合的多个承载部件。 每个载体部分可以包括相对面对的基本平坦的顶部和底部表面以及在顶部和底部表面之间延伸的至少一个孔。 载体部分可以设置在支撑元件上，其中承载部分的底表面朝向支撑元件的上表面，使得晶片可以保持在载体部分的孔中，每个晶片的一个表面面对支撑件 元件和暴露在载体部分的顶表面处的相对表面。
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