利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

40 条记录 (耗时 0.033 秒)

    MOVABLE INJECTORS IN ROTATING DISC GAS REACTORS
    1.
    发明申请
    MOVABLE INJECTORS IN ROTATING DISC GAS REACTORS 审中-公开
    可旋转注射器旋转盘式反应器

    公开(公告)号：US20120070916A1

    公开(公告)日：2012-03-22

    申请号：US13307239

    申请日：2011-11-30

    申请人： Piero Sferlazzo ,  Alexander I. Gurary ,  Eric A. Armour ,  William E. Quinn ,  Steve Ting

    发明人： Piero Sferlazzo ,  Alexander I. Gurary ,  Eric A. Armour ,  William E. Quinn ,  Steve Ting

    IPC分类号： H01L21/66

    CPC分类号： C23C16/45589

    摘要： A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets. A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector, and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation.

    摘要翻译： 提供了一种用于在旋转盘化学气相沉积反应系统中在晶片上均匀沉积材料层的系统和方法，其中一个或多个衬底围绕轴线在载体上旋转，同时保持所述一个或多个衬底的表面基本上垂直于 旋转轴线并沿着旋转轴向上游方向。 在旋转期间，第一气体沿着下游方向从第一组气体入口朝向一个或多个基板排出。 第二气体沿下游方向从至少一个可移动气体喷射器朝向一个或多个基板排出，并且至少一个可移动气体入口以径向方向的运动分量朝向或远离旋转轴线移动 。

    Movable injectors in rotating disc gas reactors
    2.
    发明授权
    Movable injectors in rotating disc gas reactors 失效
    可旋转注射器在旋转盘式气体反应器

    公开(公告)号：US08092599B2

    公开(公告)日：2012-01-10

    申请号：US11827133

    申请日：2007-07-10

    申请人： Piero Sferlazzo ,  Alexander I. Gurary ,  Eric A. Armour ,  William E. Quinn ,  Steve Ting

    发明人： Piero Sferlazzo ,  Alexander I. Gurary ,  Eric A. Armour ,  William E. Quinn ,  Steve Ting

    IPC分类号： C23C16/00 ,  C23C16/455 ,  H01L21/306

    CPC分类号： C23C16/45589

    摘要： A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets. A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector, and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation.

    摘要翻译： 提供了一种用于在旋转盘化学气相沉积反应系统中在晶片上均匀沉积材料层的系统和方法，其中一个或多个衬底围绕轴线在载体上旋转，同时保持所述一个或多个衬底的表面基本上垂直于 旋转轴线并沿着旋转轴向上游方向。 在旋转期间，第一气体沿着下游方向从第一组气体入口朝向一个或多个基板排出。 第二气体沿下游方向从至少一个可移动气体喷射器朝向一个或多个基板排出，并且至少一个可移动气体入口以径向方向的运动分量朝向或远离旋转轴线移动 。

    Movable injectors in rotating disc gas reactors
    3.
    发明申请
    Movable injectors in rotating disc gas reactors 失效
    可旋转注射器在旋转盘式气体反应器

    公开(公告)号：US20090017190A1

    公开(公告)日：2009-01-15

    申请号：US11827133

    申请日：2007-07-10

    申请人： Piero Sferlazzo ,  Alexander I. Gurary ,  Eric A. Armour ,  William E. Quinn ,  Steve Ting

    发明人： Piero Sferlazzo ,  Alexander I. Gurary ,  Eric A. Armour ,  William E. Quinn ,  Steve Ting

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45589

    摘要： A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets. A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector, and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation.

    摘要翻译： 提供了一种用于在旋转盘化学气相沉积反应系统中在晶片上均匀沉积材料层的系统和方法，其中一个或多个衬底围绕轴线在载体上旋转，同时保持所述一个或多个衬底的表面基本上垂直于 旋转轴线并沿着旋转轴向上游方向。 在旋转期间，第一气体沿着下游方向从第一组气体入口朝向一个或多个基板排出。 第二气体沿下游方向从至少一个可移动气体喷射器朝向一个或多个基板排出，并且至少一个可移动气体入口以径向方向的运动分量朝向或远离旋转轴线移动 。

    Roll-to-Roll Chemical Vapor Deposition System
    8.
    发明申请
    Roll-to-Roll Chemical Vapor Deposition System 审中-公开
    卷对卷化学气相沉积系统

    公开(公告)号：US20100310766A1

    公开(公告)日：2010-12-09

    申请号：US12479824

    申请日：2009-06-07

    申请人： Eric A. Armour ,  William E. Quinn ,  Piero Sferlazzo

    发明人： Eric A. Armour ,  William E. Quinn ,  Piero Sferlazzo

    IPC分类号： C23C16/458 ,  C23C16/44

    CPC分类号： C23C16/545 ,  C23C16/45502 ,  C30B25/14

    摘要： A roll-to-roll CVD system includes at least two rollers that transport a web through a deposition chamber during CVD processing. The deposition chamber defines a passage for the web to pass through while being transported by the at least two rollers. The deposition chamber includes a plurality of process chambers that are isolated by barriers which maintain separate process chemistry in each of the plurality of process chambers. Each of the plurality of process chambers includes a gas input port and a gas exhaust port, and a plurality of CVD gas sources. At least two of the plurality of CVD gas sources is coupled to the gas input port of each of the plurality of process chambers.

    摘要翻译： 卷对卷CVD系统包括在CVD处理期间将幅材输送通过沉积室的至少两个辊。 沉积室限定了通过所述纤维网通过的通道，同时被所述至少两个辊输送。 沉积室包括由在多个处理室中的每一个中保持分离的工艺化学物质的隔离物隔离的多个处理室。 多个处理室中的每一个包括气体输入端口和排气口，以及多个CVD气体源。 多个CVD气体源中的至少两个耦合到多个处理室中的每一个的气体输入端口。

    WAFER CARRIER WITH HUB
    9.
    发明申请
    WAFER CARRIER WITH HUB 审中-公开
    带框架的拖车

    公开(公告)号：US20110114022A1

    公开(公告)日：2011-05-19

    申请号：US12746846

    申请日：2008-12-01

    申请人： Vadim Boguslavskiy ,  Alexander I. Gurary ,  Keng Moy ,  Eric A. Armour

    发明人： Vadim Boguslavskiy ,  Alexander I. Gurary ,  Keng Moy ,  Eric A. Armour

    IPC分类号： C23C16/00 ,  B05C13/00 ,  C23C16/44

    CPC分类号： C23C16/4581 ,  C23C16/45508 ,  C23C16/4584 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68792

    摘要： A wafer carrier for a rotating disc CVD reactor includes a unitary plate of a ceramic such as silicon carbide defining wafer-holding features such as pockets on its upstream surface and also includes a hub removably mounted to the plate in a central region of the plate. The hub provides a secure connection to the spindle of the reactor without imposing concentrated stresses on the ceramic plate. The hub can be removed during cleaning of the plate. The wafer carrier also preferably includes a gas flow facilitating element on the upstream surface of the plate in the central region of the plate. The gas flow facilitating element helps redirect the flow of incident gases along the upstream surface and away from a flow discontinuity in the central region.

    摘要翻译： 用于旋转圆盘CVD反应器的晶片载体包括诸如碳化硅的陶瓷的整体板，其限定晶片保持特征，例如其上游表面上的凹穴，并且还包括可拆卸地安装到板的中心区域中的毂。 轮毂提供与反应器主轴的牢固连接，而不会在陶瓷板上产生集中应力。 在清洁板时可以拆下轮毂。 晶片载体还优选地包括在板的中心区域中的板的上游表面上的气流促进元件。 气流促进元件有助于沿着上游表面并且远离中心区域中的流动不连续性重定向入射气体的流动。

    Wafer carriers for epitaxial growth processes
    10.
    发明授权
    Wafer carriers for epitaxial growth processes 失效
    用于外延生长工艺的晶圆载体

    公开(公告)号：US6001183A

    公开(公告)日：1999-12-14

    申请号：US723682

    申请日：1996-09-30

    申请人： Alexander I. Gurary ,  Eric A. Armour ,  Douglas A. Collins ,  Richard A. Stall

    发明人： Alexander I. Gurary ,  Eric A. Armour ,  Douglas A. Collins ,  Richard A. Stall

    IPC分类号： C23C16/458 ,  C23C16/46 ,  C30B25/12 ,  C23C16/00

    CPC分类号： C23C16/4584 ,  C23C16/46 ,  C30B25/12

    摘要： A wafer carrier/susceptor combination for use in an epitaxial deposition process has a configuration which provides greater thermal conductivity between the susceptor and the wafer carrier in regions substantially underlying the wafers than in regions not underlying the wafers. This difference in thermal conductivity is produced by configuring the wafer carrier or susceptor so that the lower surface of the wafer carrier is disposed closer to the susceptor in regions substantially underlying the wafers than in at least some regions not underlying the wafers. By controlling the thermal conductivity so that it is greater in certain regions than in other regions, the temperature difference between the wafers and the surface of the wafer carrier can be reduced, and a more uniform temperature distribution across the surface of the wafer can be achieved. As a result, the combination may be used to deposit a more uniform coating across the entire surface of each wafer.

    摘要翻译： 在外延沉积工艺中使用的晶片载体/基座组合具有这样一种构造，其在基底在晶片下方的区域中在不在晶片下方的区域中在基座和晶片载体之间提供更大的导热性。 通过配置晶片载体或基座来产生这种热导率的差异，使得晶片载体的下表面在不在晶片下方的至少一些区域内的基本上位于晶片下方的区域中更靠近基座。 通过控制热导率使其在某些区域比其他区域更大，可以减小晶片和晶片载体表面之间的温度差，并且可以实现跨晶片表面的更均匀的温度分布 。 结果，该组合可用于在每个晶片的整个表面上沉积更均匀的涂层。