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公开(公告)号：US07452125B2
公开(公告)日：2008-11-18
申请号：US11894453
申请日：2007-08-21
CPC分类号： G01J5/0003 , G01J5/522
摘要： A system and method for calibrating a pyrometer used in temperature detection in a chemical vapor deposition system is provided. A calibration wafer with a reference region including a metal such as Al or Ag for forming a eutectic, and an exposed non-reference region without such a metal, are provided. Reflectivity measurements are taken from the reference region, and temperature measurements are taken from the non-reference region, over a range of temperatures including a known melting point for the metal eutectic. The pyrometer is calibrated based on the correlation of the known eutectic melting point with the change in reflectivity data obtained in the reference region, in light of the temperature data obtained from the non-reference region.
摘要翻译： 提供了用于校准化学气相沉积系统中用于温度检测的高温计的系统和方法。 提供具有包括用于形成共晶的诸如Al或Ag的金属的参考区域的校准晶片，以及没有这种金属的暴露的非参考区域。 反射率测量取自参考区域，温度测量取自非参考区域，在包括金属共晶体的已知熔点的温度范围内。 根据从非参考区获得的温度数据，基于已知共晶熔点与在参考区域中获得的反射率数据的变化的相关性校正高温计。
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公开(公告)号：US20070291816A1
公开(公告)日：2007-12-20
申请号：US11894453
申请日：2007-08-21
申请人： Boris Volf , Mikhail Belousov , Alexander Gurary
发明人： Boris Volf , Mikhail Belousov , Alexander Gurary
IPC分类号： G01K15/00
CPC分类号： G01J5/0003 , G01J5/522
摘要： A system and method for calibrating a pyrometer used in temperature detection in a chemical vapor deposition system is provided. A calibration wafer with a reference region including a metal such as Al or Ag for forming a eutectic, and an exposed non-reference region without such a metal, are provided. Reflectivity measurements are taken from the reference region, and temperature measurements are taken from the non-reference region, over a range of temperatures including a known melting point for the metal eutectic. The pyrometer is calibrated based on the correlation of the known eutectic melting point with the change in reflectivity data obtained in the reference region, in light of the temperature data obtained from the non-reference region.
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公开(公告)号：US07275861B2
公开(公告)日：2007-10-02
申请号：US11046741
申请日：2005-01-31
申请人： Boris Volf , Mikhail Belousov , Alexander Gurary
发明人： Boris Volf , Mikhail Belousov , Alexander Gurary
CPC分类号： G01J5/0003 , G01J5/522
摘要： A system and method for calibrating a pyrometer used in temperature detection in a chemical vapor deposition system is provided. A calibration wafer with a reference region including a metal such as Al or Ag for forming a eutectic, and an exposed non-reference region without such a metal, are provided. Reflectivity measurements are taken from the reference region, and temperature measurements are taken from the non-reference region, over a range of temperatures including a known melting point for the metal eutectic. The pyrometer is calibrated based on the correlation of the known eutectic melting point with the change in reflectivity data obtained in the reference region, in light of the temperature data obtained from the non-reference region.
摘要翻译： 提供了用于校准化学气相沉积系统中用于温度检测的高温计的系统和方法。 提供具有包括用于形成共晶的诸如Al或Ag的金属的参考区域的校准晶片，以及没有这种金属的暴露的非参考区域。 反射率测量取自参考区域，温度测量取自非参考区域，在包括金属共晶体的已知熔点的温度范围内。 根据从非参考区获得的温度数据，基于已知共晶熔点与在参考区域中获得的反射率数据的变化的相关性校正高温计。
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公开(公告)号：US20050286058A1
公开(公告)日：2005-12-29
申请号：US11127834
申请日：2005-05-12
申请人： Mikhail Belousov , Boris Volf
发明人： Mikhail Belousov , Boris Volf
IPC分类号： G01B11/24
CPC分类号： G01B11/24
摘要： A method for monitoring the curvature of a surface of a body such as a semiconductor wafer (22) includes directing a beam of light along an impingement axis (36) onto the surface so that a beam of light (41) is reflected from the surface at a point of impingement. The position of the reflected beam (41) is detected in two dimensions (x,y). The body (22) is moved relative to the impingement axis (41) in a direction transverse to the impingement axis and the beam-directing and position determining steps are repeated. The curvature of the surface is calculated from the detected positions of the reflected beam in a plurality of repetitions.
摘要翻译： 用于监测诸如半导体晶片（22）的主体的表面的曲率的方法包括将光束沿着冲击轴线（36）引导到表面上，使得光束（41）从表面反射 在撞击点。 在二维（x，y）中检测反射光束（41）的位置。 主体（22）相对于冲击轴线（41）在横向于冲击轴线的方向上移动，并且重新进行光束定向和位置确定步骤。 从多个重复的反射光束的检测位置算出表面的曲率。
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公开(公告)号：US07570368B2
公开(公告)日：2009-08-04
申请号：US11127834
申请日：2005-05-12
申请人： Mikhail Belousov , Boris Volf
发明人： Mikhail Belousov , Boris Volf
IPC分类号： G01B11/24
CPC分类号： G01B11/24
摘要： A method for monitoring the curvature of a surface of a body such as a semiconductor wafer (22) includes directing a beam of light along an impingement axis (36) onto the surface so that a beam of light (41) is reflected from the surface at a point of impingement. The position of the reflected beam (41) is detected in two dimensions (x,y). The body (22) is moved relative to the impingement axis (41) in a direction transverse to the impingement axis and the beam-directing and position determining steps are repeated. The curvature of the surface is calculated from the detected positions of the reflected beam in a plurality of repetitions.
摘要翻译： 用于监测诸如半导体晶片（22）的主体的表面的曲率的方法包括将光束沿着冲击轴线（36）引导到表面上，使得光束（41）从表面反射 在撞击点。 在二维（x，y）中检测反射光束（41）的位置。 主体（22）相对于冲击轴线（41）在横向于冲击轴线的方向上移动，并且重新进行光束定向和位置确定步骤。 从多个重复的反射光束的检测位置算出表面的曲率。
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公开(公告)号：US20060171442A1
公开(公告)日：2006-08-03
申请号：US11046741
申请日：2005-01-31
申请人： Boris Volf , Mikhail Belousov , Alexander Gurary
发明人： Boris Volf , Mikhail Belousov , Alexander Gurary
CPC分类号： G01J5/0003 , G01J5/522
摘要： A system and method for calibrating a pyrometer used in temperature detection in a chemical vapor deposition system is provided. A calibration wafer with a reference region including a metal such as Al or Ag for forming a eutectic, and an exposed non-reference region without such a metal, are provided. Reflectivity measurements are taken from the reference region, and temperature measurements are taken from the non-reference region, over a range of temperatures including a known melting point for the metal eutectic. The pyrometer is calibrated based on the correlation of the known eutectic melting point with the change in reflectivity data obtained in the reference region, in light of the temperature data obtained from the non-reference region.
摘要翻译： 提供了用于校准化学气相沉积系统中用于温度检测的高温计的系统和方法。 提供具有包括用于形成共晶的诸如Al或Ag的金属的参考区域的校准晶片，以及没有这种金属的暴露的非参考区域。 反射率测量取自参考区域，温度测量取自非参考区域，在包括金属共晶体的已知熔点的温度范围内。 根据从非参考区获得的温度数据，基于已知共晶熔点与在参考区域中获得的反射率数据的变化的相关性校正高温计。
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公开(公告)号：US08937000B2
公开(公告)日：2015-01-20
申请号：US13128163
申请日：2009-11-06
申请人： Alex Gurary , Mikhail Belousov , Bojan Mitrovic
发明人： Alex Gurary , Mikhail Belousov , Bojan Mitrovic
IPC分类号： H01L21/20 , H01L21/36 , H01L21/00 , H01L21/26 , H01L21/42 , H01L21/302 , H01L21/461 , H01L21/31 , H01L21/469 , C23C16/455 , C23C16/30 , C23C16/458 , C23C16/46 , H01L21/205
CPC分类号： H01L21/02538 , C23C16/301 , C23C16/45504 , C23C16/4557 , C23C16/45574 , C23C16/45578 , C23C16/45587 , C23C16/458 , C23C16/4584 , C23C16/46 , H01L21/0262
摘要： A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into the chamber (10) of a rotating-disc reactor and directed downwardly onto a wafer carrier (32) and substrates (40) which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-350° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these.
摘要翻译： 化学气相沉积反应器及方法。 将反应性气体，例如包括III族金属源和V族金属源的气体引入旋转盘式反应器的室（10）中并且向下引导到晶片载体（32）和基板（40） 保持在升高的基板温度，通常高于约400℃，通常为约700-1100℃，以沉积诸如III-V族半导体的化合物。 气体在理想的高于约75℃的入口温度下引入反应器中，最优选的是约100℃-350℃。反应器的壁可以处于接近入口温度的温度。 使用升高的入口温度允许使用较低的晶片载体的旋转速率，更高的操作压力，更低的流速或这些的一些组合。
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公开(公告)号：US08198605B2
公开(公告)日：2012-06-12
申请号：US13208891
申请日：2011-08-12
IPC分类号： G01N21/64
CPC分类号： H01L21/6875 , G01N21/645 , G01N21/6489 , G01N2021/6417 , H01L21/68764 , Y10T117/1004 , Y10T117/1008
摘要： An apparatus for performing non-contact material characterization includes a wafer carrier adapted to hold a plurality of substrates and a material characterization device, such as a device for performing photoluminescence spectroscopy. The apparatus is adapted to perform non-contact material characterization on at least a portion of the wafer carrier, including the substrates disposed thereon.
摘要翻译： 用于执行非接触材料表征的装置包括适于保持多个基板的晶片载体和材料表征装置，例如用于进行光致发光光谱的装置。 该装置适于在晶片载体的至少一部分上执行非接触材料表征，包括设置在其上的基板。
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公开(公告)号：US08636847B2
公开(公告)日：2014-01-28
申请号：US13606130
申请日：2012-09-07
申请人： Mikhail Belousov , Bojan Mitrovic , Keng Moy
发明人： Mikhail Belousov , Bojan Mitrovic , Keng Moy
IPC分类号： C23C16/00 , C23C16/455
CPC分类号： C30B25/14 , C23C16/45574 , C23C16/45578 , C23C16/4584
摘要： A flow inlet element (22) for a chemical vapor deposition reactor (10) is formed from a plurality of elongated tubular elements (64, 65) extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier (14) rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane (108) extending through the axis.
摘要翻译： 用于化学气相沉积反应器（10）的流入口元件（22）由多个细长管状元件（64,65）形成，所述多个细长管状元件（64,65）在横向于上游到下游方向的平面中彼此并排延伸 反应堆。 管状元件具有用于沿下游方向喷射气体的入口。 晶片载体（14）围绕上游到下游轴线旋转。 气体分布元件可以提供相对于延伸穿过轴线的中间平面（108）不对称的气体分布图案。
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公开(公告)号：US08022372B2
公开(公告)日：2011-09-20
申请号：US12370044
申请日：2009-02-12
IPC分类号： G01N21/64
CPC分类号： H01L21/6875 , G01N21/645 , G01N21/6489 , G01N2021/6417 , H01L21/68764 , Y10T117/1004 , Y10T117/1008
摘要： An apparatus for performing non-contact material characterization includes a wafer carrier adapted to hold a plurality of substrates and a material characterization device, such as a device for performing photoluminescence spectroscopy. The apparatus is adapted to perform non-contact material characterization on at least a portion of the wafer carrier, including the substrates disposed thereon.
摘要翻译： 用于执行非接触材料表征的装置包括适于保持多个基板的晶片载体和材料表征装置，例如用于进行光致发光光谱的装置。 该装置适于在晶片载体的至少一部分上执行非接触材料表征，包括设置在其上的基板。
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