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42 条记录 (耗时 0.027 秒)

    Copolymers and photoresist compositions comprising same
    31.
    发明授权
    Copolymers and photoresist compositions comprising same 失效
    包含其的共聚物和光致抗蚀剂组合物

    公开(公告)号：US06777157B1

    公开(公告)日：2004-08-17

    申请号：US09567814

    申请日：2000-05-09

    申请人： George G. Barclay ,  Stefan J. Caporale ,  Wang Yueh ,  Zhibiao Mao ,  Joseph Mattia

    发明人： George G. Barclay ,  Stefan J. Caporale ,  Wang Yueh ,  Zhibiao Mao ,  Joseph Mattia

    IPC分类号： G03F7004

    CPC分类号： G03F7/0397 ,  G03F7/0395 ,  Y10S430/106 ,  Y10S430/111

    摘要： The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention suitably contain 1) photoacid labile groups that preferably contain an alicyclic moiety; 2) a polymerized electron-deficient monomer; 3) a polymerized cyclic olefin moiety. Particularly preferred polymers of the invention are tetrapolymers or pentapolymers, preferably with differing polymerized norbornene units.

    摘要翻译： 本发明包括聚合物和光致抗蚀剂组合物，其包含作为树脂粘合剂组分的聚合物。 本发明的光刻胶包括可以在短波长例如亚200nm，特别是193nm下有效成像的化学放大的正性抗蚀剂。 本发明的聚合物适当地含有1）优选含有脂环族部分的光酸不稳定基团; 2）聚合电子缺陷单体; 3）聚合的环烯烃部分。 本发明特别优选的聚合物是四聚物或五元共聚物，优选具有不同聚合的降冰片烯单元。

    Photoresists with reduced outgassing for extreme ultraviolet lithography
    32.
    发明授权
    Photoresists with reduced outgassing for extreme ultraviolet lithography 有权
    具有减少放气用于极紫外光刻的光致抗蚀剂

    公开(公告)号：US07427463B2

    公开(公告)日：2008-09-23

    申请号：US10686031

    申请日：2003-10-14

    申请人： Heidi Cao ,  Wang Yueh

    发明人： Heidi Cao ,  Wang Yueh

    IPC分类号： G03F7/00 ,  G03F7/004

    CPC分类号： G03F7/0392 ,  G03F7/0397

    摘要： Chemically amplified photoresists with reduced outgassing or no outgassing may be used in a vacuum environment of a lithography tool, such as an extreme ultraviolet lithography tool. A chemically amplified photoresist has a photoacid generator molecule. When the photoacid generator is irradiated, an acid is generated. The acid reacts with a protecting group in the photoresist to form an open-ring structure with reduced outgassing or no outgassing.

    摘要翻译： 可以在光刻工具的真空环境（例如极紫外光刻工具）中使用化学放大的光致抗蚀剂，其具有减少的放气或不发生除气。 化学放大光致抗蚀剂具有光酸产生剂分子。 当光酸发生剂被照射时，产生酸。 酸与光致抗蚀剂中的保护基反应以形成具有减少的除气或不排气的开环结构。

    Resist compounds including acid labile groups attached to polymeric chains at anhydride linkages
    33.
    发明授权
    Resist compounds including acid labile groups attached to polymeric chains at anhydride linkages 有权
    抗酸化合物包括在酸酐键连接到聚合物链上的酸不稳定基团

    公开(公告)号：US07147986B2

    公开(公告)日：2006-12-12

    申请号：US10815606

    申请日：2004-03-31

    申请人： Wang Yueh ,  Heidi B. Cao

    发明人： Wang Yueh ,  Heidi B. Cao

    IPC分类号： G03F7/004

    CPC分类号： G03F7/0397

    摘要： A compound including a polymeric chain, and an acid labile group attached to the polymeric chain at an anhydride linkage is disclosed. Compositions including the compound, and methods of using the compositions are also disclosed.

    摘要翻译： 公开了包含聚合物链的化合物和在酸酐键连接到聚合物链上的酸不稳定基团。 还公开了包括该化合物的组合物和使用该组合物的方法。

    Resist compounds including acid labile groups attached to polymeric chains at anhydride linkages
    36.
    发明申请
    Resist compounds including acid labile groups attached to polymeric chains at anhydride linkages 有权
    抗酸化合物包括在酸酐键连接到聚合物链上的酸不稳定基团

    公开(公告)号：US20050221219A1

    公开(公告)日：2005-10-06

    申请号：US10815606

    申请日：2004-03-31

    申请人： Wang Yueh ,  Heidi Cao

    发明人： Wang Yueh ,  Heidi Cao

    IPC分类号： G03C1/492 ,  G03F7/039

    CPC分类号： G03F7/0397

    摘要： A compound including a polymeric chain, and an acid labile group attached to the polymeric chain at an anhydride linkage is disclosed. Compositions including the compound, and methods of using the compositions are also disclosed.

    摘要翻译： 公开了包含聚合物链的化合物和在酸酐键连接到聚合物链上的酸不稳定基团。 还公开了包括该化合物的组合物和使用该组合物的方法。

    One component EUV photoresist
    38.
    发明申请
    One component EUV photoresist 失效
    单组分EUV光刻胶

    公开(公告)号：US20050158650A1

    公开(公告)日：2005-07-21

    申请号：US10762031

    申请日：2004-01-21

    申请人： Wang Yueh ,  Heidi Cao

    发明人： Wang Yueh ,  Heidi Cao

    IPC分类号： C08F8/30 ,  G03C1/76 ,  G03F7/023

    CPC分类号： G03F7/023 ,  C08F8/30

    摘要： In one embodiment, a photoactive compound may be attached to a polymer backbone. This embodiment may be more resistant to the generation of reactive outgassing components and may exhibit better contrast.

    摘要翻译： 在一个实施方案中，光活性化合物可以连接到聚合物主链上。 该实施方案可以更好地抵抗反应性除气组分的产生并且可以表现出更好的对比度。

    Methods and compositions for providing photoresist with improved properties for contacting liquids
    39.
    发明申请
    Methods and compositions for providing photoresist with improved properties for contacting liquids 失效
    用于提供具有改进的液体接触性能的光刻胶的方法和组合物

    公开(公告)号：US20050084794A1

    公开(公告)日：2005-04-21

    申请号：US10688109

    申请日：2003-10-16

    申请人： Robert Meagley ,  Ernisse Putna ,  Wang Yueh

    发明人： Robert Meagley ,  Ernisse Putna ,  Wang Yueh

    IPC分类号： G03C1/76 ,  G03F7/039 ,  G03F7/20

    CPC分类号： G03F7/2041 ,  G03F7/0392

    摘要： Embodiments of the invention provide methods and compositions for providing photoresists with improved liquid-contact properties. For one embodiment of the invention, a photoresist is provided having one or more constituent components that are resistant to diffusion between the photoresist and an index-matching liquid (IML). For such an embodiment in which the IML is water, a photoresist component is provided that is hydrophobic thus reducing diffusion between the photoresist and the water. In various alternative embodiments of the invention, a photoresist is provided having one or more constituent components that encourage diffusion between the photoresist layer and the IML in such manner as to impart beneficial liquid-contact properties to the photoresist layer. For such an embodiment in which the IML is water, a photoresist is provided having one or more hydrophilic constituents.

    摘要翻译： 本发明的实施方案提供了提供具有改进的液体接触性能的光致抗蚀剂的方法和组合物。 对于本发明的一个实施例，提供具有一个或多个阻挡光致抗蚀剂和折射率匹配液体（IML）之间的扩散的组成成分的光致抗蚀剂。 对于其中IML为水的这种实施方案，提供了疏水性的光致抗蚀剂组分，从而减少光致抗蚀剂和水之间的扩散。 在本发明的各种替代实施例中，提供具有一种或多种构成组分的光致抗蚀剂，其以促使光致抗蚀剂层有益的液体接触性质的方式促进光致抗蚀剂层和IML之间的扩散。 对于其中IML为水的这种实施方案，提供具有一种或多种亲水组分的光致抗蚀剂。

    Methods and compositions for reducing line wide roughness
    40.
    发明申请
    Methods and compositions for reducing line wide roughness 有权
    减少线宽粗糙度的方法和组合物

    公开(公告)号：US20050084793A1

    公开(公告)日：2005-04-21

    申请号：US10687288

    申请日：2003-10-15

    申请人： Wang Yueh ,  Huey-Chiang Liou ,  Hai Deng ,  Hok-Kin Choi

    发明人： Wang Yueh ,  Huey-Chiang Liou ,  Hai Deng ,  Hok-Kin Choi

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/022 ,  G03F7/023

    CPC分类号： G03F7/022 ,  G03F7/023 ,  G03F7/0233

    摘要： Embodiments of the invention provide a non-chemically amplified photoresist, which results in reduced line wide roughness (LWR). In accordance with one embodiment the photoresist includes a developer-soluble resin (DSR) and a photoactive compound (PAC). For one embodiment of the invention, the even distribution of the PAC within the DSR results in reduced acid diffusion thus reducing LWR. Prior to exposure to the light source, the PAC inhibits solubility of the DSR in the developer. Upon exposure the PAC converts to acid to promote solubility of the DSR. The even distribution of the PAC within the photoresist results in reduced LWR and a reduction in defects. For one embodiment the photoresist is applied in the EUV technology (e.g., wavelength is 13.4 nm). For such an embodiment the LWR may be reduced to less than 1.5 nm allowing for effective fabrication of devices having feature sizes of approximately 15 nm.

    摘要翻译： 本发明的实施例提供非化学放大的光致抗蚀剂，其导致线宽粗糙度（LWR）的降低。 根据一个实施方案，光致抗蚀剂包括显影剂可溶性树脂（DSR）和光敏化合物（PAC）。 对于本发明的一个实施例，PAC在DSR内的均匀分布导致酸扩散减少，从而减少LWR。 在暴露于光源之前，PAC抑制DSR在显影剂中的溶解度。 曝光后，PAC转化为酸，以促进DSR的溶解度。 PAC在光致抗蚀剂内的均匀分布导致LWR降低和缺陷减少。 对于一个实施例，以EUV技术（例如，波长为13.4nm）施加光致抗蚀剂。 对于这样的实施例，LWR可以减小到小于1.5nm，允许有效地制造具有大约15nm的特征尺寸的器件。