公开(公告)号：US4406053A

公开(公告)日：1983-09-27

申请号：US289296

申请日：1981-07-31

申请人： Kanetake Takasaki ,  Yoshimi Shioya

发明人： Kanetake Takasaki ,  Yoshimi Shioya

IPC分类号： H01L21/268 ,  H01L21/3105 ,  H01L21/314 ,  H01L21/321 ,  H01L21/56

CPC分类号： H01L21/314 ,  H01L21/268 ,  H01L21/3105 ,  H01L21/321 ,  Y10S438/958

摘要： A process for manufacturing a semiconductor device comprises the step of annealing a porous passivation layer which is deposited on the surface of the device and which covers metallization layers fabricated thereon, by irradiating a laser beam on the passivation layer so as to densify the passivation layer, while the laser beam scans the surface of the passivation layer.

摘要翻译： 制造半导体器件的方法包括以下步骤：通过在激光束上照射钝化层来钝化沉积在器件的表面上并覆盖其上制造的金属化层的多孔钝化层，从而使钝化层致密化， 而激光束扫描钝化层的表面。