公开(公告)号：USRE41237E1

公开(公告)日：2010-04-20

申请号：US11880423

申请日：2001-06-11

申请人： Yukio Tanaka ,  Katsuhiko Kumagawa ,  Masanori Kimura ,  Kazunori Komori

发明人： Yukio Tanaka ,  Katsuhiko Kumagawa ,  Masanori Kimura ,  Kazunori Komori

IPC分类号： G09G5/00

CPC分类号： G02F1/136213 ,  G02F1/134336 ,  G02F2001/133388 ,  G09G3/3233 ,  G09G3/3614 ,  G09G3/3648 ,  G09G3/3655 ,  G09G3/3659 ,  G09G2300/0842 ,  G09G2320/0209 ,  G09G2320/0219 ,  G09G2320/0223 ,  G09G2320/0247

摘要： An active matrix type display apparatus is provided that is inexpensive, has less crosstalk, has no flickering and a brightness gradient, and is suitable for a large screen size. The display apparatus includes a plurality of pixel electrodes arranged in a matrix, switching elements (TFTs) connected thereto, scanning electrodes, video signal electrodes, common electrodes, and a counter electrode, wherein liquid crystal, for example, is interposed between the pixel electrodes and the counter electrode. Assuming that a gate-drain capacitance is Cgd, a common electrode-pixel electrode capacitance is Cst, and the total capacitance connected to the pixel electrodes is Ctot in this configuration, αgd and αst represented by αgd=Cgd/Ctot, αst=Cst/Ctot are set to be different values between a portion close to feeding ends in a screen and a portion away therefrom.

摘要翻译： 提供了一种廉价的，具有较少串扰，没有闪烁和亮度梯度的有源矩阵型显示装置，并且适合于大屏幕尺寸。 显示装置包括以矩阵形式布置的多个像素电极，与其连接的开关元件（TFT），扫描电极，视频信号电极，公共电极和对电极，其中液晶例如被插入在像素电极 和对电极。 假设栅极 - 漏极电容为Cgd，则公共电极像素电极电容为Cst，并且在该结构中，连接到像素电极的总电容为Ctot，由αgd= Cgd / Ctot表示的αgd和αst，αst= Cst / Ctot被设定为在屏幕中靠近进给端的部分和远离其的部分之间的不同值。

公开(公告)号：US07499115B2

公开(公告)日：2009-03-03

申请号：US10398385

申请日：2001-10-04

申请人： Katsuhiko Kumagawa ,  Hiroyuki Yamakita ,  Masanori Kimura ,  Akio Takimoto

发明人： Katsuhiko Kumagawa ,  Hiroyuki Yamakita ,  Masanori Kimura ,  Akio Takimoto

IPC分类号： G02F1/141 ,  G02F1/133 ,  G02F1/1343

CPC分类号： G02F1/134363 ,  G02F2001/134345 ,  G09G3/3614 ,  G09G2300/0434 ,  G09G2320/0247

摘要： An array substrate (10) is provided with a pixel electrode (3) disposed in a region defined by two adjacent gate wirings (1) and two adjacent source wirings (2), a switching element (5) for switching a voltage applied to the pixel electrode (3) from the source wiring (2) based on a signal voltage supplied from the gate wiring (1), a common wiring (8) arranged between the two adjacent gate wirings (1) and a common electrode (4) being electrically connected to the common wiring (8) and generating an electric field between the pixel electrode (3) whereto a voltage is applied, wherein the pixel electrode (1) comprises a first pixel electrode (1a) and a second pixel electrode (2a), and the opposing electrode (2) comprises a first opposing electrode (1b) and a second opposing electrode (2b), wherein a first region generates an electric field between the first pixel electrode (1a) and the first opposing electrode (2a) whose light transmittance is lower than that of the first pixel electrode (1a) and a second region generates an electric field between the second pixel electrode (1b) and the second opposing electrode (2b) whose light transmittance is higher than that of the second pixel electrode (1b) are formed.

摘要翻译： 阵列基板（10）设置有设置在由两个相邻的栅极布线（1）和两个相邻的源极布线（2）限定的区域中的像素电极（3），用于切换施加到 基于从栅极布线（1）提供的信号电压，源极布线（2）的像素电极（3），布置在两个相邻的栅极布线（1）和公共电极（4）之间的公共布线（8） 电连接到公共布线（8）并在施加电压的像素电极（3）之间产生电场，其中像素电极（1）包括第一像素电极（1a）和第二像素电极（2a） ，相对电极（2）包括第一相对电极（1b）和第二相对电极（2b），其中第一区域在第一像素电极（1a）和第一相对电极（2a）之间产生电场， 透光率比第一像素电极的透光率低 1a）和第二区域在第二像素电极（1b）和第二相对电极（2b）之间产生其透光率高于第二像素电极（1b）的电场。

公开(公告)号：US20070097031A1

公开(公告)日：2007-05-03

申请号：US10559728

申请日：2005-05-24

申请人： Kunihiro Mima ,  Masanori Kimura ,  Teiichi Kimura

发明人： Kunihiro Mima ,  Masanori Kimura ,  Teiichi Kimura

IPC分类号： G09G3/28

CPC分类号： G09G3/294 ,  G09G3/2965 ,  G09G2310/066 ,  G09G2320/0233

摘要： A method for driving a plasma display panel is disclosed in which generation of a region having brightness non-uniformity can be reduced over an entire screen without changing the voltage and pulse width of sustain pulses thus enabling suppression of an increase in power consumption. This method for driving a plasma display panel comprises an initialization period for forming a discharge cell at an intersection where scan electrode and sustain electrode meet data electrode and generating initialization discharge in the cell, a writing period for generating writing discharge in the discharge cell, and a sustain period for generating sustain discharge by alternately applying sustain pulses to the scan electrode and sustain electrode of the discharge cell, and rise time of the sustain pulses to be applied to the scan electrode and sustain electrode during the sustain period is shortened at a frequency of once every several times.

摘要翻译： 公开了一种用于驱动等离子体显示面板的方法，其中可以在整个屏幕上减少具有亮度不均匀性的区域的生成，而不改变维持脉冲的电压和脉冲宽度，从而能够抑制功耗的增加。 用于驱动等离子体显示面板的方法包括用于在扫描电极和维持电极与数据电极相交并在单元中产生初始化放电的交叉处形成放电单元的初始化时段，用于在放电单元中产生写入放电的写入周期，以及 用于通过对维持周期的扫描电极和维持电极交替施加维持脉冲而产生维持放电的维持周期，并且在维持周期期间将被施加到扫描电极和维持电极的维持脉冲的上升时间缩短为频率 每隔几次。

公开(公告)号：US06816208B2

公开(公告)日：2004-11-09

申请号：US09911305

申请日：2001-07-23

申请人： Tetsuo Fukami ,  Katsuhiko Kumagawa ,  Masanori Kimura

发明人： Tetsuo Fukami ,  Katsuhiko Kumagawa ,  Masanori Kimura

IPC分类号： G02F11368

CPC分类号： G02F1/134363 ,  G02F1/136213

摘要： This is an active matrix liquid crystal display device comprising a capacitive accumulation portion formed by overlapping a pixel electrode, an insulating layer and a common electrode for each pixel area, and a non-electrode area in a part of the pixel area which is not covered with a pixel electrode, wherein a peripheral shape of said capacitive accumulation portion on a side contacting said non-electrode area is substantially the same between the respective pixels, and a value of a storage capacity in said capacitive accumulation portion differs on a feeding side and on a termination side, the value on the feeding side being larger than the value on the termination side. Thereby, a constant aperture ratio can be maintained by changing the storage capacity value for each pixel. Furthermore, by using a lateral electric field method liquid crystal display device, the storage capacity value can be changed while maintaining the aperture ratio of the pixel constant, and the electric fields applied to the liquid crystal layer in the display portion can be kept evenly. As a result, deterioration and unevenness of display characteristics do not occur. Moreover, even in the case of using a light shield film to improve contrast and so forth, a light shield film with a narrower width than that in a conventional configuration can be used, so that the aperture ratio does not drop drastically.

公开(公告)号：US06801293B1

公开(公告)日：2004-10-05

申请号：US10089888

申请日：2002-04-05

申请人： Kazuhiro Nishiyama ,  Junko Asayama ,  Kazunori Komori ,  Yukio Tanaka ,  Akio Takimoto ,  Kazuo Inoue ,  Katsuhiko Kumagawa ,  Ichiro Sato ,  Hirofumi Wakemoto ,  Noriyuki Kizu ,  Masanori Kimura ,  Keisuke Tsuda

发明人： Kazuhiro Nishiyama ,  Junko Asayama ,  Kazunori Komori ,  Yukio Tanaka ,  Akio Takimoto ,  Kazuo Inoue ,  Katsuhiko Kumagawa ,  Ichiro Sato ,  Hirofumi Wakemoto ,  Noriyuki Kizu ,  Masanori Kimura ,  Keisuke Tsuda

IPC分类号： G02F113

CPC分类号： G02F1/133512 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/134363

摘要： The curing, by UV-light irradiation, of a sealing resin after injecting liquid crystal is made reliable. The display characteristics and the like of an in-plane electric field mode liquid crystal element are improved. To resolve these problems, the viscosity of the sealing resin is lowered, while bubbles mixed in the sealing resin are eliminated by ultrasonic waves, for example. Also, a means for eliminating ions and charges in the liquid crystal layer is devised.

摘要翻译： 通过UV光照射固化注射液晶后的密封树脂是可靠的。提高了面内电场模式液晶元件的显示特性等。为了解决这些问题， 密封树脂被降低，而例如通过超声波消除混入密封树脂中的气泡。另外，设计了用于消除液晶层中的离子和电荷的装置。

公开(公告)号：US06801264B2

公开(公告)日：2004-10-05

申请号：US10775664

申请日：2004-02-09

申请人： Katsuhiko Kumagawa ,  Masanori Kimura ,  Tetsuo Fukami

发明人： Katsuhiko Kumagawa ,  Masanori Kimura ,  Tetsuo Fukami

IPC分类号： G02F11343

CPC分类号： G02F1/134363 ,  G02F1/136213

摘要： One of a pair of substrates with liquid crystals sandwiched therebetween includes a plurality of pixels each of which is provided with a scanning electrode, an image signal electrode, a switching element provided at an intersection of the scanning electrode and the image signal electrode, a pixel electrode connected to the image signal electrode via the switching element, a counter electrode, and a busbar electrically connected to the counter electrode. A portion of the pixel electrode is overlapped with the busbar so as to make up a storage capacitance. A shape of the pixel electrode is altered for each pixel so that a value of the storage capacitance becomes smaller from a feeding side to a termination side. The portion of the pixel electrode overlapped with the busbar so as to make up the storage capacitance is located within the busbar in a plan view of the device.

摘要翻译： 一对夹在其中的液晶的基板之一包括多个像素，每个像素均设置有扫描电极，图像信号电极，设置在扫描电极和图像信号电极的交点处的开关元件，像素 电极经由开关元件连接到图像信号电极，对电极和电连接到对电极的母线。 像素电极的一部分与母线重叠，构成存储电容。 对于每个像素，像素电极的形状被改变，使得存储电容的值从馈送侧到终端侧变小。 像素电极与母线重叠以便构成存储电容的部分在设备的平面图中位于母线内。

公开(公告)号：US06678460B1

公开(公告)日：2004-01-13

申请号：US09460866

申请日：1999-12-14

申请人： Isao Kogure ,  Yasutaka Kotani ,  Kazuyuki Iesaka ,  Masanori Kimura ,  Keiko Takeda ,  Hisao Osabe

发明人： Isao Kogure ,  Yasutaka Kotani ,  Kazuyuki Iesaka ,  Masanori Kimura ,  Keiko Takeda ,  Hisao Osabe

IPC分类号： H04N591

CPC分类号： G11B5/0086 ,  G11B5/588 ,  G11B20/10527 ,  G11B2020/10537 ,  G11B2020/10879 ,  G11B2220/91 ,  H04N5/782 ,  H04N9/8211

摘要： A magnetic reproducer for reproducing data recorded on a magnetic tape by forming tracks sequentially and obliquely along a longitudinal direction of the magnetic tape, has magnetic heads for reproducing the information by sequentially scanning the tracks formed on the magnetic tape with a first track width for a first recording system or a second track width for a second recording system wider than that for the first recording system. And, a gap width between the magnetic heads is set at a value which is wider than the first track width and narrower than the second track width.

摘要翻译： 一种用于通过沿着磁带的纵向方向依次形成轨道来再现记录在磁带上的数据的磁性再现器，具有用于通过以形成在磁带上的轨迹顺序扫描形成磁道的磁头， 第一记录系统或第二记录系统的第二轨道宽度比第一记录系统宽。 并且，磁头之间的间隙宽度被设定为比第一轨道宽度宽且比第二轨道宽度窄的值。

公开(公告)号：US06674961B1

公开(公告)日：2004-01-06

申请号：US09471699

申请日：1999-12-23

申请人： Hiroya Mori ,  Yasutaka Kotani ,  Kazuyuki Iesaka ,  Hisao Osabe ,  Masanori Kimura

发明人： Hiroya Mori ,  Yasutaka Kotani ,  Kazuyuki Iesaka ,  Hisao Osabe ,  Masanori Kimura

IPC分类号： H04N5926

CPC分类号： G11B5/00878 ,  G11B15/1875 ,  G11B15/467 ,  H04N5/772 ,  H04N5/78263 ,  H04N9/7921

摘要： In a magnetic recording device and method, a magnetic reproduction method and its method and a tape recording medium, the performance can be improved. In the case of successively and obliquely forming tracks along the longitudinal direction of a second magnetic tape having a width wider than a first magnetic tape and continuously recording recording data for at least two tracks in a digital recording format on each track, each track is to be formed at a predetermined track pitch set based on the recording time and the reproduction signal characteristic. Thereby, recording data based on the digital recording format which is applied to the first magnetic tape can keep a practically sufficient C/N ratio and can be recorded on the second magnetic tape for a long time. And thus, a magnetic recording device and method, a magnetic reproduction device and method, and a tape recording medium capable of improving the performance can be realized.

摘要翻译： 在磁记录装置和方法，磁再现方法及其方法和磁带记录介质中，可以提高性能。 在沿着宽度比第一磁带宽度大的第二磁带的纵向连续倾斜地形成磁道的情况下，并且在每个磁道上连续记录数字记录格式的至少两个磁道的记录数据， 以基于记录时间和再现信号特性的预定轨道间距形成。 因此，基于应用于第一磁带的数字记录格式的记录数据可以保持实际上足够的C / N比，并且可以长时间记录在第二磁带上。 因此，可以实现能够提高性能的磁记录装置和方法，磁再现装置和方法以及磁带记录介质。

公开(公告)号：US06348180B1

公开(公告)日：2002-02-19

申请号：US09492001

申请日：2000-01-26

申请人： Makoto Iida ,  Satoshi Suzuki ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Satoshi Suzuki ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B1520

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203

摘要： A method for producing a silicon single crystal in accordance with the Czochralski method. The single crystal is grown in an N2(V) region where a large amount of precipitated oxygen and which is located within an N region located outside an OSF ring region, or is grown in a region including the OSF ring region, N1(V) and N2(V) regions located inside and outside the OSF ring region, in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a radial distance D (mm) from the center of the crystal and the vertical axis represents a value of F/G (mm2/° C.·min), where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (° C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400° C. The method allows production of silicon single crystal wafers in which neither FPDs nor L/D defects exist on the wafer surface, and gettering capability stemming from oxygen precipitation is provided over the entire wafer surface, and silicon single crystal wafers wherein OSF nuclei exit but no OSF ring appears when the wafer is subjected to thermal oxidation treatment, neither FPDs nor L/D defects exist on the wafer surface, and gettering capability is provided over the entire wafer surface.

摘要翻译： 根据Czochralski法生产硅单晶的方法。 单晶生长在大量析出氧并且位于OSF环外部的N区内的N2（V）区域中，或者在包括OSF环区域N1（V）的区域中生长， 和位于OSF环区域内外的N 2（V）区域的缺陷分布图，其表示水平轴表示与晶体中心的径向距离D（mm）的缺陷分布，纵轴表示 F / G的值（mm2 /℃·min），其中F是单晶的拉伸速率（mm / min），G是沿着单晶的平均晶体内温度梯度（°C / mm） 在硅熔点的温度范围内拉伸方向为1400℃。该方法允许生产晶片表面上不存在FPD和L / D缺陷的硅单晶晶片，并且提供由氧沉淀产生的吸杂能力 整个晶圆表面和硅单晶 当晶片进行热氧化处理时，在晶片表面上不存在FPD和L / D缺陷，并且在整个晶片表面上提供吸杂能力，其中OSF核离开但没有OSF环出现。

公开(公告)号：US06334896B1

公开(公告)日：2002-01-01

申请号：US09600033

申请日：2000-07-11

申请人： Makoto Iida ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B1504

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206

摘要： A method for producing a silicon single crystal, wherein, when a silicon single crystal is grown by the Czochralski method, the crystal is pulled with such conditions as present in a region defined by a boundary between a V-rich region and an N-region and a boundary between an N-region and an I-rich region in a defect distribution chart showing defect distribution which is plotted with D [mm] as abscissa and F/G [mm2/° C.·min] as ordinate, wherein D represents a distance between center of the crystal and periphery of the crystal, F/G [mm/min] represents a pulling rate and G [° C./mm] represents an average temperature gradient along the crystal pulling axis direction in the temperature range of from the melting point of silicon to 1400° C., and time required for crystal temperature to pass through the temperature region of from 900° C. to 600° C. is controlled to be 700 minutes or shorter, and a silicon single crystal wafer grown by the Czochralski method, which is a silicon single crystal wafer having N-region for its entire plane, and does not generate OSFs by a single-step thermal oxidation treatment, but generates OSFs by a two-step thermal oxidation treatment. According to the method, a silicon single crystal wafer of an extremely low defect density, which has the N-region for the entire plane of the crystal, is obtained by the CZ, while maintaining high productivity.

摘要翻译： 一种硅单晶的制造方法，其中，当通过切克劳斯斯克方法生长硅单晶时，以存在于富V区和N区之间的边界的区域中的条件拉伸晶体 和缺陷分布图中的N区域和富I区域之间的边界，示出了以D [mm]为横坐标绘制的缺陷分布，F / G [mm2 /℃·min]为纵坐标，其中D 表示晶体的中心和晶体的周边之间的距离，F / G [mm / min]表示拉伸速度，G [℃/ mm]表示在温度范围内沿着拉晶轴方向的平均温度梯度 从硅的熔点到1400℃，晶体温度通过900℃至600℃的温度所需的时间被控制为700分钟或更短，并且硅单晶 通过Czochralski方法生长的晶片，其是硅单体 晶片在其整个平面上具有N区，并且不通过单步热氧化处理产生OSF，而是通过两步热氧化处理产生OSF。 根据该方法，通过CZ获得具有用于整个晶体平面的N区域的具有极低缺陷密度的硅单晶晶片，同时保持高生产率。