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公开(公告)号：US4268452A
公开(公告)日：1981-05-19
申请号：US128604
申请日：1980-03-10
IPC分类号： C08L83/04
CPC分类号： C08K5/54 , C08K3/0033 , C08G77/16
摘要： A noncurable sealing material from a hydroxyl end-blocked polydiorganosiloxane, a filler and a silane or siloxane with two hydrolyzable groups having silicon-nitrogen bonds or silicon-oxygen-nitrogen bonds. The material when mixed and stored under substantially anhydrous conditions remains fluid but when exposed to the moisture in air increases in viscosity to form a sealing material which is uncured.
摘要翻译： 来自羟基封端的聚二有机硅氧烷，填料和硅烷或硅氧烷的不可固化的密封材料具有两个具有硅 - 氮键或硅 - 氧 - 氮键的可水解基团。 当在基本上无水的条件下混合并储存时的材料保持流体，但当暴露于空气中的水分时，粘度增加，形成未固化的密封材料。
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公开(公告)号：USD678129S1
公开(公告)日：2013-03-19
申请号：US29425428
申请日：2012-06-22
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公开(公告)号：US08354731B2
公开(公告)日：2013-01-15
申请号：US12461160
申请日：2009-08-03
IPC分类号： H01L29/00
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device includes: a substrate; an electric fuse that includes a lower-layer wiring formed on the substrate, a first via provided on the lower-layer wiring and connected to the lower-layer wiring, and an upper-layer wiring provided on the first via and connected to the first via, a flowing-out portion of a conductive material constituting the electric fuse being formed in a cut-off state of the electric fuse; and a heat diffusion portion that includes a heat diffusion wiring that is formed in the same layer as one of the upper-layer wiring and the lower-layer wiring and is placed on a side of the one of the upper-layer wiring and the lower-layer wiring, the heat diffusion portion being electrically connected to the one of the upper-layer wiring and the lower-layer wiring.
摘要翻译： 半导体器件包括：衬底; 包括形成在所述基板上的下层布线的电熔丝，设置在所述下层布线上并连接到所述下层布线的第一通孔，以及设置在所述第一通孔上并连接到所述第一通孔的第一通孔 通过构成电熔丝的导电材料的流出部分形成在电熔丝的切断状态; 以及热扩散部，其包括形成在与上层布线和下层布线之一相同的层中的热扩散布线，并且布置在上层布线和下层布线中的一个布线的一侧 所述热扩散部分电连接到所述上层布线和所述下层布线之一。
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公开(公告)号：US08324662B2
公开(公告)日：2012-12-04
申请号：US12591727
申请日：2009-11-30
IPC分类号： H01L23/52
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes an electric fuse formed on a substrate. The electric fuse includes: a first interconnect formed on one end side thereof; a second interconnect formed in a layer different from a layer in which the first interconnect is formed; a first via provided in contact with the first interconnect and the second interconnect to connect those interconnects; a third interconnect formed on another end side thereof, the third interconnect being formed in the same layer in which the first interconnect is formed, as being separated from the first interconnect; and a second via provided in contact with the third interconnect and the second interconnect to connect those interconnects, the second via being lower in resistance than the first via. The electric fuse is disconnected by a flowing-out portion to be formed of a conductive material forming the electric fuse which flows outwardly during disconnection.
摘要翻译： 半导体器件包括形成在衬底上的电熔丝。 电熔丝包括：在其一端侧形成的第一互连件; 形成在与形成有第一互连的层不同的层中的第二互连; 与所述第一互连件相接触地设置的第一通孔和用于连接所述互连件的所述第二互连件; 在其另一端侧形成的第三互连，所述第三互连形成在与所述第一互连分离的同一层中，所述第一互连形成在所述第一互连中; 以及与所述第三互连件和所述第二互连件接触地设置以连接那些互连件的第二通孔，所述第二通孔的电阻低于所述第一通孔。 电熔丝由形成在断开时向外流动的电熔丝的导电材料形成的流出部分断开。
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公开(公告)号：US20110272778A1
公开(公告)日：2011-11-10
申请号：US13137032
申请日：2011-07-15
IPC分类号： H01L23/525
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes an electric fuse and first and second large area wirings for applying a voltage to the electric fuse. The electric fuse includes a fuse unit which includes an upper-layer fuse wiring, a lower-layer fuse wiring, and a via connecting the upper-layer fuse wiring and the lower-layer fuse wiring, an upper-layer lead-out wiring which connects the upper-layer fuse wiring and the first large area wiring and has a bent pattern, and a lower-layer lead-out wiring which connects the lower-layer fuse wiring and the second large area wiring and has a bent pattern.
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公开(公告)号：US20100096723A1
公开(公告)日：2010-04-22
申请号：US12588202
申请日：2009-10-07
IPC分类号： H01L23/52
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes an electric fuse and first and second large area wirings for applying a voltage to the electric fuse. The electric fuse includes a fuse unit which includes an upper-layer fuse wiring, a lower-layer fuse wiring, and a via connecting the upper-layer fuse wiring and the lower-layer fuse wiring, an upper-layer lead-out wiring which connects the upper-layer fuse wiring and the first large area wiring and has a bent pattern, and a lower-layer lead-out wiring which connects the lower-layer fuse wiring and the second large area wiring and has a bent pattern.
摘要翻译： 半导体器件包括电熔丝和用于向电熔丝施加电压的第一和第二大面积布线。 电熔丝包括熔丝单元，其包括上层熔丝布线，下层熔丝布线和连接上层熔丝布线和下层熔丝布线的布线，上层引出布线 连接上层熔丝布线和第一大面积布线并具有弯曲图案，以及连接下层熔丝布线和第二大面积布线并具有弯曲图案的下层引出布线。
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公开(公告)号：US20100032798A1
公开(公告)日：2010-02-11
申请号：US12461160
申请日：2009-08-03
IPC分类号： H01L23/525
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device includes: a substrate; an electric fuse that includes a lower-layer wiring formed on the substrate, a first via provided on the lower-layer wiring and connected to the lower-layer wiring, and an upper-layer wiring provided on the first via and connected to the first via, a flowing-out portion of a conductive material constituting the electric fuse being formed in a cut-off state of the electric fuse; and a heat diffusion portion that includes a heat diffusion wiring that is formed in the same layer as one of the upper-layer wiring and the lower-layer wiring and is placed on a side of the one of the upper-layer wiring and the lower-layer wiring, the heat diffusion portion being electrically connected to the one of the upper-layer wiring and the lower-layer wiring.
摘要翻译： 半导体器件包括：衬底; 包括形成在所述基板上的下层布线的电熔丝，设置在所述下层布线上并连接到所述下层布线的第一通孔，以及设置在所述第一通孔上并连接到所述第一通孔的第一通孔 通过构成电熔丝的导电材料的流出部分形成在电熔丝的切断状态; 以及热扩散部，其包括形成在与上层布线和下层布线之一相同的层中的热扩散布线，并且布置在上层布线和下层布线中的一个布线的一侧 所述热扩散部分电连接到所述上层布线和所述下层布线之一。
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公开(公告)号：US20090256235A1
公开(公告)日：2009-10-15
申请号：US12385407
申请日：2009-04-07
IPC分类号： H01L23/525
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A semiconductor device (200) includes: an electrical fuse (100) including: a lower layer interconnect (120) formed on a substrate; a via (130) provided on the lower layer interconnect (120) so as to be connected to the lower layer interconnect (120); and an upper layer interconnect (110) provided on the via (130) so as to be connected to the via (130), the electrical fuse being cut, in a state after being cut, through formation of a flowing-out portion, the flowing-out portion being formed when an electrical conductor forming the upper layer interconnect (110) flows outside the upper layer interconnect (110); and a guard upper layer interconnect (152) (conductive heat-absorbing member) formed in at least the same layer as the upper layer interconnect (110), for absorbing heat generated in the upper layer interconnect (110).
摘要翻译： 一种半导体器件（200）包括：电熔丝（100），包括：形成在衬底上的下层互连（120）; 设置在所述下层互连（120）上以便连接到所述下层互连（120）的通孔（130）; 以及设置在所述通孔（130）上以便连接到所述通路（130）的上层互连（110），所述电熔丝在切割后通过形成流出部分被切割，所述电熔丝 当形成上层互连（110）的电导体流过上层互连（110）之外时形成流出部分; 以及形成在与上层互连件（110）至少相同的层中的保护层上层互连（152）（导电性吸热构件），用于吸收在上层互连件（110）中产生的热量。
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公开(公告)号：USD600163S1
公开(公告)日：2009-09-15
申请号：US29325340
申请日：2008-09-29
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公开(公告)号：USD475950S1
公开(公告)日：2003-06-17
申请号：US29163050
申请日：2002-06-27
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