公开(公告)号：US20100015788A1

公开(公告)日：2010-01-21

申请号：US12518392

申请日：2008-09-05

申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno

发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno

IPC分类号： H01L21/265

CPC分类号： H01L21/2236 ,  H01L21/268

摘要： Plasma doping is performed by exposing a support substrate 11 made of a semiconductor to a plasma generated from a mixed gas of boron 51 which is an impurity and hydrogen 52 and helium 53 which are diluents so as to implant the boron 51 into the support substrate 11. Then, a preliminary heating step is performed by heating the support substrate 11 so that doses of the hydrogen 52 and the helium 53 are smaller than that of the boron 51 in the support substrate 11 by utilizing a difference between a thermal diffusion coefficient of the boron 51 in the support substrate 11 and those of the hydrogen 52 and the helium 53. Then, a laser heating step is performed for electrically activating the boron 51 implanted into the support substrate 11 using a laser.

摘要翻译： 通过将由半导体制成的支撑基板11暴露于由作为杂质的硼51和作为稀释剂的氢52和氦53的混合气体产生的等离子体进行等离子体掺杂，以将硼51注入到支撑基板11中 然后，通过加热支撑基板11，通过利用支撑基板11的热扩散系数的差异，通过加热支撑基板11使得氢52和氦53的剂量小于支撑基板11中的硼51的剂量来进行预热加热步骤 支撑基板11中的硼51以及氢52和氦53的硼。然后，使用激光进行激活加入到支撑基板11中的硼51的激光加热步骤。

公开(公告)号：US20090266298A1

公开(公告)日：2009-10-29

申请号：US12430551

申请日：2009-04-27

申请人： Katsumi Okashita ,  Yuichiro Sasaki ,  Bunji Mizuno

发明人： Katsumi Okashita ,  Yuichiro Sasaki ,  Bunji Mizuno

IPC分类号： B05C11/00

CPC分类号： H01J37/32477 ,  H01J37/32412 ,  H01J37/32935 ,  H01J37/3299

摘要： On an upper wall of a vacuum container opposing a sample electrode, a plasma-invasion prevention-and-electron beam introducing hole is installed which is communicated with an electron beam introducing tube, and is used for introducing an electron beam toward a substrate in the vacuum container, as well as for preventing invasion of plasma into the electron beam introducing tube. In this structure, supposing that the Debye length of the plasma is set to λd and that a thickness of the sheath is set to Sd, the electron beam introducing hole has a diameter D satisfying a following equation: D≦2λd+2Sd.

摘要翻译： 在与样品电极相对的真空容器的上壁上，安装有与电子束导入管连通的等离子体侵入防止电子束导入孔，并用于将电子束导向基板的电子束 真空容器，以及用于防止等离子体侵入电子束导入管中。 在该结构中，假设等离子体的德拜长度设定为羔羊，并且将鞘的厚度设定为Sd，则电子束导入孔的直径D满足以下等式：D <= 2lambdad + 2Sd。

公开(公告)号：US07601619B2

公开(公告)日：2009-10-13

申请号：US11887821

申请日：2006-04-04

申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/42 ,  H01J37/32 ,  C23F4/00

CPC分类号： H01J37/32935 ,  H01J37/321 ,  H01J37/32412

摘要： A method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample. Predetermined gas is exhausted via an exhaust port by a turbo-molecular pump while introducing the gas within the vacuum chamber from a gas supply device, and the pressure within the vacuum chamber is kept at a predetermined value by a pressure regulating valve. A high-frequency power supply for a plasma source supplies a high-frequency power to a coil provided near a dielectric window to generate inductively coupled plasma within the vacuum chamber. A high-frequency power supply for the sample electrode for supplying the high-frequency power to the sample electrode is provided. A matching circuit for the sample electrode and a high-frequency sensor are provided between the sample electrode high-frequency power supply and the sample electrode. An ion current applied to the surface of a sample can be accurately monitored buy using the high-frequency sensor and an arithmetic device.

摘要翻译： 一种用于等离子体处理的方法和装置，其可以精确地监测施加到样品表面的离子电流。 通过涡轮分子泵通过排气口排出预定气体，同时从气体供给装置引入真空室内的气体，并通过压力调节阀将真空室内的压力保持在预定值。 用于等离子体源的高频电源为设置在电介质窗附近的线圈提供高频电力，以在真空室内产生电感耦合等离子体。 提供了用于向样品电极提供高频电力的样品电极的高频电源。 在样品电极高频电源和样品电极之间设置用于样品电极和高频传感器的匹配电路。 使用高频传感器和运算装置，可以精确地监视施加到样品表面的离子电流。

公开(公告)号：US20090233427A1

公开(公告)日：2009-09-17

申请号：US12158852

申请日：2007-11-13

申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno

发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno

IPC分类号： H01L21/265

CPC分类号： H01L21/2236

摘要： An impurity region is formed in a surface of a substrate by exposing the substrate to a plasma generated from a gas containing an impurity in a vacuum chamber. In this process, a plasma doping condition is set with respect to a dose of the impurity to be introduced into the substrate so that a first one of doses in a central portion and in a peripheral portion of the substrate is greater than a second one of the doses during an initial period of doping, with the second dose becoming greater than the first dose thereafter.

摘要翻译： 通过将衬底暴露于由真空室中含有杂质的气体产生的等离子体，在衬底的表面中形成杂质区。 在该过程中，相对于要引入衬底的杂质的剂量设置等离子体掺杂条件，使得在衬底的中心部分和周边部分中的第一个剂量大于第二个 在掺杂的初始阶段期间的剂量，其中第二剂量变得大于其后的第一剂量。

公开(公告)号：US20080061292A1

公开(公告)日：2008-03-13

申请号：US11597166

申请日：2005-05-19

申请人： Cheng-Guo Jin ,  Yuichiro Sasaki ,  Bunji Mizuno ,  Katsumi Okashita ,  Hiroyuki Ito ,  Tomohiro Okumura ,  Satoshi Maeshima ,  Ichiro Nakayama

发明人： Cheng-Guo Jin ,  Yuichiro Sasaki ,  Bunji Mizuno ,  Katsumi Okashita ,  Hiroyuki Ito ,  Tomohiro Okumura ,  Satoshi Maeshima ,  Ichiro Nakayama

IPC分类号： H01L29/04 ,  G21K5/00 ,  H01L21/66

CPC分类号： H01L21/2236 ,  H01L21/0276

摘要： The invention provides a method of doping impurities that includes a step of doping impurities in a solid base substance by using a plasma doping method, a step of forming a light antireflection layer that functions to reduce light reflection on the surface of the solid base substance, and a step of performing annealing by light radiation. According to the method, it is possible to reduce the reflectance of light radiated during annealing, to efficiently apply energy an impurity doped layer, to improve activation efficiency, to prevent diffusion, and to reduce sheet resistance of the impurity doped layer.

摘要翻译： 本发明提供掺杂杂质的方法，其包括通过使用等离子体掺杂法掺杂固体基质中的杂质的步骤，形成用于减少固体基体物质表面的光反射的光抗反射层的步骤， 以及通过光辐射进行退火的步骤。 根据该方法，能够降低退火时的光的反射率，有效地施加杂质掺杂层的能量，提高活化效率，防止扩散，降低杂质掺杂层的薄层电阻。

公开(公告)号：US20070190759A1

公开(公告)日：2007-08-16

申请号：US11741861

申请日：2007-04-30

申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Tomohiro Okumura

发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Tomohiro Okumura

IPC分类号： H01L21/26 ,  H01L21/42

CPC分类号： H01L21/2236 ,  H01J37/32412 ,  H01L29/66795

摘要： A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved. It has been found that, if a bias is applied by irradiating B2H6/He plasma onto a silicon substrate, there is a time at which a dose of boron is made substantially uniform, and the saturation time is comparatively long and ease to stably use, compared with a time at which repeatability of an apparatus control can be secured. The invention has been finalized focusing on the result. That is, if plasma irradiation starts, a dose is initially increased, but a time at which the dose is made substantially uniform without depending on a time variation is continued. In addition, if the time is further increased, the dose is decreased. The dose can be accurately controlled through a process window of the time at which the dose is made substantially uniform without depending on the time variation.

摘要翻译： 实现了可以精确控制剂量的等离子体掺杂方法。 剂量的面内均匀性得到改善。 已经发现，如果通过将B 2 H 2 H 6 / He / He等离子体照射到硅衬底上施加偏压，则存在硼剂量为 与能够确保装置控制的可重复性的时间相比，饱和时间比较长，易于稳定地使用。 本发明已经确定了结果。 也就是说，如果等离子体照射开始，则剂量最初增加，但是持续施加剂量基本上均匀而不依赖于时间变化的时间。 此外，如果时间进一步增加，则剂量降低。 剂量可以通过在剂量基本均匀的时间的过程窗口中被准确地控制，而不依赖于时间变化。

公开(公告)号：US20070166846A1

公开(公告)日：2007-07-19

申请号：US11647149

申请日：2006-12-29

申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Tomohiro Okumura

发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Tomohiro Okumura

IPC分类号： H01L21/66 ,  H01L21/04 ,  G01R31/26

CPC分类号： H01L21/2236 ,  H01J37/32412 ,  H01L29/66795

摘要： A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved. It has been found that, if a bias is applied by irradiating B2H6/He plasma onto a silicon substrate, there is a time at which a dose of boron is made substantially uniform, and the saturation time is comparatively long and ease to stably use, compared with a time at which repeatability of an apparatus control can be secured. The invention has been finalized focusing on the result. That is, if plasma irradiation starts, a dose is initially increased, but a time at which the dose is made substantially uniform without depending on a time variation is continued. In addition, if the time is further increased, the dose is decreased. The dose can be accurately controlled through a process window of the time at which the dose is made substantially uniform without depending on the time variation.

摘要翻译： 实现了可以精确控制剂量的等离子体掺杂方法。 剂量的面内均匀性得到改善。 已经发现，如果通过将B 2 H 2 H 6 / He / He等离子体照射到硅衬底上施加偏压，则存在硼剂量为 与能够确保装置控制的可重复性的时间相比，饱和时间比较长，易于稳定地使用。 本发明已经确定了结果。 也就是说，如果等离子体照射开始，则剂量最初增加，但是持续施加剂量基本上均匀而不依赖于时间变化的时间。 此外，如果时间进一步增加，则剂量降低。 剂量可以通过在剂量基本均匀的时间的过程窗口中被准确地控制，而不依赖于时间变化。

公开(公告)号：US20070111548A1

公开(公告)日：2007-05-17

申请号：US11647235

申请日：2006-12-29

申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Tomohiro Okumura

发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Tomohiro Okumura

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L21/2236 ,  C23C14/48 ,  H01J37/32412

摘要： Disclosed is a plasma doping method that, even though a plasma doping treatment is repeated, can make a dose from a film to a silicon substrate uniform for each time. According to an embodiment of the invention, there is provided a plasma doping method that places a sample on a sample electrode in a vacuum chamber, generates plasma in the vacuum chamber, and causes impurity ions in the plasma to collide against a surface of the sample so as to form an impurity doped layer in the surface of the sample. The plasma doping method includes a maintenance step of preparing the vacuum chamber having a film containing an impurity formed on an inner wall thereof such that, when the film containing the impurity fixed to the inner wall of the vacuum chamber is attacked by ions in the plasma, the amount of an impurity to be doped into the surface of the sample by sputtering is not changed even though the plasma containing the impurity ions is repeatedly generated in the vacuum chamber, a step of placing the sample on the sample electrode, and a step of irradiating the plasma containing the impurity ions so as to implant the impurity ions into the sample, and doping the impurity into the sample by sputtering from the film containing the impurity fixed to the inner wall of the vacuum chamber.

摘要翻译： 公开了等离子体掺杂方法，即使重复进行等离子体掺杂处理，也可以每次从膜到硅衬底的剂量均匀。 根据本发明的实施例，提供了一种等离子体掺杂方法，其将样品置于真空室中的样品电极上，在真空室中产生等离子体，并使等离子体中的杂质离子与样品的表面碰撞 以在样品的表面形成杂质掺杂层。 等离子体掺杂方法包括维持步骤，准备具有含有形成在其内壁上的杂质的膜的真空室，使得当包含固定在真空室的内壁上的杂质的膜被等离子体中的离子侵蚀时 即使在真空室中重复产生含有杂质离子的等离子体，将样品放置在样品电极上的步骤，也可以通过溅射将待掺杂到样品表面的杂质量变化， 照射含​​有杂质离子的等离子体，以将杂质离子注入到样品中，并通过溅射从固定到真空室的内壁的杂质的膜溅射而将杂质掺杂到样品中。

公开(公告)号：US20120186519A1

公开(公告)日：2012-07-26

申请号：US13358277

申请日：2012-01-25

申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

IPC分类号： C23C16/50

CPC分类号： H01L21/2236 ,  H01J37/321 ,  H01J37/32412 ,  H01J2237/2001

摘要： A plasma doping method and apparatus in which a prescribed gas is introduced into a vacuum container while being exhausted by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency electric power of 13.56 MHz is supplied to a coil disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.

摘要翻译： 一种等离子体掺杂方法和装置，其中将预定气体通过作为排气装置的涡轮分子泵排出而被引入真空容器中。 通过压力调节阀将真空容器内的压力保持在规定值。 将13.56MHz的高频电力供给到与样品电极相对的电介质窗附近设置的线圈，由此在真空容器内产生感应耦合等离子体。 每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。 控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

公开(公告)号：US08124507B2

公开(公告)日：2012-02-28

申请号：US12937169

申请日：2010-03-04

申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno

发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno

IPC分类号： H01L29/78 ,  H01L21/223

CPC分类号： H01L29/785 ,  H01L29/66795

摘要： A fin-type semiconductor region (103) is formed on a substrate (101), and then a resist pattern (105) is formed on the substrate (101). An impurity is implanted into the fin-type semiconductor region (103) by a plasma doping process using the resist pattern (105) as a mask, and then at least a side of the fin-type semiconductor region (103) is covered with a protective film (107). Thereafter, the resist pattern (105) is removed by cleaning using a chemical solution, and then the impurity implanted into the fin-type semiconductor region (103) is activated by heat treatment.

摘要翻译： 在基板（101）上形成翅片型半导体区域（103），然后在基板（101）上形成抗蚀图案（105）。 通过使用抗蚀剂图案（105）作为掩模的等离子体掺杂工艺将杂质注入到鳍式半导体区域（103）中，然后用鳍状半导体区域（103）的至少一侧覆盖 保护膜（107）。 此后，通过使用化学溶液的清洗除去抗蚀剂图案（105），然后通过热处理激活注入到鳍式半导体区域（103）中的杂质。