公开(公告)号：US07858155B2

公开(公告)日：2010-12-28

申请号：US11666773

申请日：2005-10-27

申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Cheng-Guo Jin ,  Satoshi Maeshima ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Bunji Mizuno

发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Cheng-Guo Jin ,  Satoshi Maeshima ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Bunji Mizuno

IPC分类号： A61N5/00 ,  G21G5/00

CPC分类号： H01L21/68735 ,  H01J37/32642 ,  H01L21/2236 ,  H01L21/67069

摘要： It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 through a gas inlet 11 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus through an exhaust hole 12. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided and functions as a voltage source for controlling the potential of the sample electrode 6. A surface crystal layer of a silicon wafer 9 was rendered amorphous successfully by improving the structure of the sample-electrode 6.

摘要翻译： 本发明旨在提供一种能够提高薰蒸处理的均匀性的等离子体处理方法和装置。 通过排气孔12，通过作为排气装置的涡轮分子泵3排出，通过气体入口11将气体从气体供给装置2引入真空容器1。真空容器1内的压力保持在 通过压力调节阀4的规定值。13.56MHz的高频电力从高频电源5供给到靠近与样品电极6相对的电介质窗7的线圈8， 在真空容器1中产生耦合等离子体。提供用于向样品电极6提供高频电力的高频电源10，并且用作用于控制样品电极6的电位的电压源。表面晶体 通过改善样品电极6的结构，使硅晶片9的层成为无定形。

公开(公告)号：US07582492B2

公开(公告)日：2009-09-01

申请号：US11597166

申请日：2005-05-19

申请人： Cheng-Guo Jin ,  Yuichiro Sasaki ,  Bunji Mizuno ,  Katsumi Okashita ,  Hiroyuki Ito ,  Tomohiro Okumura ,  Satoshi Maeshima ,  Ichiro Nakayama

发明人： Cheng-Guo Jin ,  Yuichiro Sasaki ,  Bunji Mizuno ,  Katsumi Okashita ,  Hiroyuki Ito ,  Tomohiro Okumura ,  Satoshi Maeshima ,  Ichiro Nakayama

IPC分类号： G01R31/26 ,  H01L21/66

CPC分类号： H01L21/2236 ,  H01L21/0276

摘要： The invention provides a method of doping impurities that includes a step of doping impurities in a solid base substance by using a plasma doping method, a step of forming a light antireflection layer that functions to reduce light reflection on the surface of the solid base substance, and a step of performing annealing by light radiation. According to the method, it is possible to reduce the reflectance of light radiated during annealing, to efficiently apply energy an impurity doped layer, to improve activation efficiency, to prevent diffusion, and to reduce sheet resistance of the impurity doped layer.

摘要翻译： 本发明提供掺杂杂质的方法，其包括通过使用等离子体掺杂法掺杂固体基质中的杂质的步骤，形成用于减少固体基体物质表面的光反射的光抗反射层的步骤， 以及通过光辐射进行退火的步骤。 根据该方法，能够降低退火时的光的反射率，有效地施加杂质掺杂层的能量，提高活化效率，防止扩散，降低杂质掺杂层的薄层电阻。

公开(公告)号：US20080258082A1

公开(公告)日：2008-10-23

申请号：US11666773

申请日：2005-10-27

申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Cheng-Guo Jin ,  Satoshi Maeshima ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Bunji Mizuno

发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Cheng-Guo Jin ,  Satoshi Maeshima ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Bunji Mizuno

IPC分类号： G21G5/00

CPC分类号： H01L21/68735 ,  H01J37/32642 ,  H01L21/2236 ,  H01L21/67069

摘要： It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 through a gas inlet 11 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus through an exhaust hole 12. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided and functions as a voltage source for controlling the potential of the sample electrode 6. A surface crystal layer of a silicon wafer 9 was rendered amorphous successfully by improving the structure of the sample-electrode 6.

摘要翻译： 本发明旨在提供一种能够提高薰蒸处理的均匀性的等离子体处理方法和装置。 通过排气孔12通过作为排气装置的涡轮分子泵3排出，将规定的气体从气体供给装置2经由气体入口11导入真空容器1。 真空容器1中的压力通过压力调节阀4保持在规定值。 从高频电源5将13.56MHz的高频电力供给到与样品电极6相对的电介质窗7附近设置的线圈8，由此在真空容器1内产生感应耦合等离子体 。 提供了用于向样品电极6提供高频电力的高频电源10，并且用作用于控制样品电极6的电位的电压源。 通过改善样品电极6的结构，使硅晶片9的表面晶体层成为非晶体。

公开(公告)号：US20080061292A1

公开(公告)日：2008-03-13

申请号：US11597166

申请日：2005-05-19

申请人： Cheng-Guo Jin ,  Yuichiro Sasaki ,  Bunji Mizuno ,  Katsumi Okashita ,  Hiroyuki Ito ,  Tomohiro Okumura ,  Satoshi Maeshima ,  Ichiro Nakayama

发明人： Cheng-Guo Jin ,  Yuichiro Sasaki ,  Bunji Mizuno ,  Katsumi Okashita ,  Hiroyuki Ito ,  Tomohiro Okumura ,  Satoshi Maeshima ,  Ichiro Nakayama

IPC分类号： H01L29/04 ,  G21K5/00 ,  H01L21/66

CPC分类号： H01L21/2236 ,  H01L21/0276

摘要： The invention provides a method of doping impurities that includes a step of doping impurities in a solid base substance by using a plasma doping method, a step of forming a light antireflection layer that functions to reduce light reflection on the surface of the solid base substance, and a step of performing annealing by light radiation. According to the method, it is possible to reduce the reflectance of light radiated during annealing, to efficiently apply energy an impurity doped layer, to improve activation efficiency, to prevent diffusion, and to reduce sheet resistance of the impurity doped layer.

摘要翻译： 本发明提供掺杂杂质的方法，其包括通过使用等离子体掺杂法掺杂固体基质中的杂质的步骤，形成用于减少固体基体物质表面的光反射的光抗反射层的步骤， 以及通过光辐射进行退火的步骤。 根据该方法，能够降低退火时的光的反射率，有效地施加杂质掺杂层的能量，提高活化效率，防止扩散，降低杂质掺杂层的薄层电阻。

公开(公告)号：US07759254B2

公开(公告)日：2010-07-20

申请号：US10569464

申请日：2004-08-25

申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Cheng-Guo Jin ,  Hideki Tamura ,  Ichiro Nakayama ,  Tomohiro Okumura ,  Satoshi Maeshima

发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Cheng-Guo Jin ,  Hideki Tamura ,  Ichiro Nakayama ,  Tomohiro Okumura ,  Satoshi Maeshima

IPC分类号： H01L21/302

CPC分类号： H01L21/02052 ,  H01L21/2236

摘要： A method of forming an impurity-introduced layer is disclosed. The method includes at least a step of forming a resist pattern on a principal face of a solid substrate such as a silicon substrate (S27); a step of introducing impurity into the solid substrate through plasma-doping in ion mode (S23), a step of removing a resist (S28), a step of cleaning metal contamination and particles attached to a surface of the solid substrate (S25a); a step of anneal (S26). The step of removing a resist (S28) irradiates the resist with oxygen-plasma or brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the resist. The step of cleaning (S25a) brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the principal face of the solid substrate. The step of removing a resist (S28) and the step of cleaning (S25a) can be conducted simultaneously by bringing mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the principal face of the solid substrate.

摘要翻译： 公开了一种形成杂质导入层的方法。 该方法至少包括在诸如硅衬底的固体衬底的主面上形成抗蚀剂图案的步骤（S27）; 通过离子模式的等离子体掺杂（S23）将杂质引入固体基板的步骤，去除抗蚀剂的步骤（S28），清洁附着在固体基板表面上的金属污染物和颗粒的步骤（S25a）; 退火步骤（S26）。 去除抗蚀剂的步骤（S28）用氧等离子体照射抗蚀剂，或者将硫酸和过氧化氢水的混合溶液，或NH 4 OH，H 2 O 2和H 2 O的混合溶液与抗蚀剂接触。 清洗步骤（S25a）将硫酸和过氧化氢水或NH 4 OH，H 2 O 2和H 2 O的混合溶液混合溶液与固体基质的主面接触。 除去抗蚀剂（S28）和清洗步骤（S25a）的步骤可以通过将硫酸和过氧化氢水的混合溶液或NH 4 OH，H 2 O 2和H 2 O的混合溶液与主要面接触来同时进行 固体基质。

公开(公告)号：US20080146009A1

公开(公告)日：2008-06-19

申请号：US10597716

申请日：2005-02-04

申请人： Yuichiro Sasaki ,  Tomohiro Okumura ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama ,  Satoshi Maeshima ,  Katsumi Okashita

发明人： Yuichiro Sasaki ,  Tomohiro Okumura ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama ,  Satoshi Maeshima ,  Katsumi Okashita

IPC分类号： H01L21/22

CPC分类号： H01L21/2236

摘要： To provide an impurity introducing method which can repeatedly carry out such a process that plasma irradiation for realization of amorphous and plasma doping were combined, in such a situation that steps are simple and through-put is high, without destroying an apparatus.At the time of switching over plasmas which are used in plasma irradiation for realization of amorphous and plasma doping, electric discharge is stopped, and an initial condition of a matching point of a high frequency power supply and a peripheral circuit is reset so as to adapt to plasma which is used in each step, or at the time of switching, a load, which is applied to the high frequency power supply etc., is reduced by increasing pressure and decreasing a bias voltage.

摘要翻译： 为了提供可以重复进行等离子体放电以实现非晶态和等离子体掺杂的方法，在步骤简单且易于投入的情况下，不会破坏装置的方法。 在用于等离子体等离子体掺杂的等离子体照射中使用的等离子体切换时，停止放电，并且复位高频电源和外围电路的匹配点的初始状态，以适应 对于每个步骤中使用的等离子体，或者在切换时，通过增加压力和降低偏置电压来减小施加到高频电源等的负载。

公开(公告)号：US07456085B2

公开(公告)日：2008-11-25

申请号：US10597716

申请日：2005-02-04

申请人： Yuichiro Sasaki ,  Tomohiro Okumura ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama ,  Satoshi Maeshima ,  Katsumi Okashita

发明人： Yuichiro Sasaki ,  Tomohiro Okumura ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama ,  Satoshi Maeshima ,  Katsumi Okashita

IPC分类号： H01L21/26 ,  H01L21/42

CPC分类号： H01L21/2236

摘要： To provide an impurity introducing method which can repeatedly carry out such a process that plasma irradiation for realization of amorphous and plasma doping were combined, in such a situation that steps are simple and through-put is high, without destroying an apparatus.At the time of switching over plasmas which are used in plasma irradiation for realization of amorphous and plasma doping, electric discharge is stopped, and an initial condition of a matching point of a high frequency power supply and a peripheral circuit is reset so as to adapt to plasma which is used in each step, or at the time of switching, a load, which is applied to the high frequency power supply etc., is reduced by increasing pressure and decreasing a bias voltage.

摘要翻译： 为了提供可以重复进行等离子体放电以实现非晶态和等离子体掺杂的方法，在步骤简单且易于投入的情况下，不会破坏装置的方法。 在用于等离子体等离子体掺杂的等离子体照射中使用的等离子体切换时，停止放电，并且复位高频电源和外围电路的匹配点的初始状态，以适应 对于每个步骤中使用的等离子体，或者在切换时，通过增加压力和降低偏置电压来减小施加到高频电源等的负载。

公开(公告)号：US20120186519A1

公开(公告)日：2012-07-26

申请号：US13358277

申请日：2012-01-25

申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

IPC分类号： C23C16/50

CPC分类号： H01L21/2236 ,  H01J37/321 ,  H01J37/32412 ,  H01J2237/2001

摘要： A plasma doping method and apparatus in which a prescribed gas is introduced into a vacuum container while being exhausted by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency electric power of 13.56 MHz is supplied to a coil disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.

摘要翻译： 一种等离子体掺杂方法和装置，其中将预定气体通过作为排气装置的涡轮分子泵排出而被引入真空容器中。 通过压力调节阀将真空容器内的压力保持在规定值。 将13.56MHz的高频电力供给到与样品电极相对的电介质窗附近设置的线圈，由此在真空容器内产生感应耦合等离子体。 每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。 控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

公开(公告)号：US20090233383A1

公开(公告)日：2009-09-17

申请号：US11884924

申请日：2006-02-14

申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

IPC分类号： H01L21/66 ,  B05C11/00

CPC分类号： H01L21/2236 ,  H01J37/321 ,  H01J37/32412 ,  H01J2237/2001

摘要： It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.

摘要翻译： 旨在提供一种等离子体掺杂方法和装置，该等离子体掺杂方法和装置在引入样品的表面层中的杂质的浓度的可控性方面是优异的。 将规定的气体从作为排气装置的涡轮分子泵3排出而从气体供给装置2引入真空容器1。 真空容器1中的压力通过压力调节阀4保持在规定值。13.56MHz的高频电力从高频电源5供给到靠近电介质窗7设置的线圈8， 与样品电极6相对，从而在真空容器1中产生感应耦合等离子体。提供了用于向样品电极6提供高频电力的高频电源10。 每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。 控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

公开(公告)号：US20070212837A1

公开(公告)日：2007-09-13

申请号：US11596372

申请日：2005-05-12

申请人： Bunji Mizuno ,  Yuichiro Sasaki ,  Ichiro Nakayama ,  Hiroyuki Ito ,  Tomohiro Okumura ,  Cheng-Guo Jin ,  Katsumi Okashita ,  Hisataka Kanada

发明人： Bunji Mizuno ,  Yuichiro Sasaki ,  Ichiro Nakayama ,  Hiroyuki Ito ,  Tomohiro Okumura ,  Cheng-Guo Jin ,  Katsumi Okashita ,  Hisataka Kanada

IPC分类号： H01L21/77

CPC分类号： H01L21/26513 ,  H01L21/26566 ,  H01L21/28035 ,  H01L29/7833

摘要： An object is to provide a semiconductor device in which uniform properties are intended and high yields are provided. Process steps are provided in which variations are adjusted in doping and annealing process steps that are subsequent process steps so as to cancel in-plane variations in a substrate caused by dry etching to finally as well provide excellent in-plane consistency in a substrate.

摘要翻译： 本发明的目的是提供一种半导体器件，其中具有均匀的性质并提供高产率。 提供了工艺步骤，其中在随后的工艺步骤的掺杂和退火工艺步骤中调整变化，以便最终消除由干蚀刻引起的衬底中的平面内变化，并且在衬底中提供优异的面内稠度。