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145 条记录 (耗时 0.03 秒)

    Plasma doping device with gate shutter
    1.
    发明授权
    Plasma doping device with gate shutter 失效
    带闸门的等离子体掺杂装置

    公开(公告)号：US08257501B2

    公开(公告)日：2012-09-04

    申请号：US11887323

    申请日：2006-03-29

    申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Cheng-Guo Jin

    发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Cheng-Guo Jin

    IPC分类号： C23C16/00

    CPC分类号： H01L21/2236 ,  H01J37/321 ,  H01J37/32412 ,  H01J37/32458 ,  H01J37/32623 ,  H01J37/32633

    摘要： In a plasma doping device according to the invention, a vacuum chamber (1) is evacuated with a turbo-molecular pump (3) as an exhaust device via a exhaust port 11 while a predetermined gas is being introduced from a gas supply device (2) in order to maintain the inside of the vacuum chamber (1) to a predetermined pressure with a pressure regulating valve (4). A high-frequency power of 13.56 MHz is supplied by a high-frequency power source (5) to a coil (8) provided in the vicinity of a dielectric window (7) opposed to a sample electrode (6) to generate inductive-coupling plasma in the vacuum chamber (1). A high-frequency power source (10) for supplying a high-frequency power to the sample electrode (6) is provided. Uniformity of processing is enhanced by driving a gate shutter (18) and covering a through gate (16).

    摘要翻译： 在根据本发明的等离子体掺杂装置中，在从气体供应装置（2）引入预定气体的同时，通过排气口11将真空室（1）作为排气装置用涡轮分子泵（3）抽真空 ），以便通过压力调节阀（4）将真空室（1）的内部保持在预定压力。 高频电源（5）将13.56MHz的高频功率提供给设置在与样品电极（6）相对的电介质窗口（7）附近的线圈（8），以产生电感耦合 真空室（1）中的等离子体。 提供了用于向样品电极（6）提供高频电力的高频电源（10）。 通过驱动闸门（18）并覆盖通过门（16）来增强处理的均匀性。

    Plasma doping method
    4.
    发明授权
    Plasma doping method 有权
    等离子体掺杂法

    公开(公告)号：US07790586B2

    公开(公告)日：2010-09-07

    申请号：US12158852

    申请日：2007-11-13

    申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno

    发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno

    IPC分类号： H01L21/26 ,  H01L21/265 ,  H01L21/425

    CPC分类号： H01L21/2236

    摘要： An impurity region is formed in a surface of a substrate by exposing the substrate to a plasma generated from a gas containing an impurity in a vacuum chamber. In this process, a plasma doping condition is set with respect to a dose of the impurity to be introduced into the substrate so that a first one of doses in a central portion and in a peripheral portion of the substrate is greater than a second one of the doses during an initial period of doping, with the second dose becoming greater than the first dose thereafter.

    摘要翻译： 通过将衬底暴露于由真空室中含有杂质的气体产生的等离子体，在衬底的表面中形成杂质区。 在该过程中，相对于要引入衬底的杂质的剂量设置等离子体掺杂条件，使得在衬底的中心部分和周边部分中的第一个剂量大于第二个 在掺杂的初始阶段期间的剂量，其中第二剂量变得大于其后的第一剂量。

    Method and apparatus for plasma processing
    5.
    发明授权
    Method and apparatus for plasma processing 失效
    等离子体处理方法和装置

    公开(公告)号：US07601619B2

    公开(公告)日：2009-10-13

    申请号：US11887821

    申请日：2006-04-04

    申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

    发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

    IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/42 ,  H01J37/32 ,  C23F4/00

    CPC分类号： H01J37/32935 ,  H01J37/321 ,  H01J37/32412

    摘要： A method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample. Predetermined gas is exhausted via an exhaust port by a turbo-molecular pump while introducing the gas within the vacuum chamber from a gas supply device, and the pressure within the vacuum chamber is kept at a predetermined value by a pressure regulating valve. A high-frequency power supply for a plasma source supplies a high-frequency power to a coil provided near a dielectric window to generate inductively coupled plasma within the vacuum chamber. A high-frequency power supply for the sample electrode for supplying the high-frequency power to the sample electrode is provided. A matching circuit for the sample electrode and a high-frequency sensor are provided between the sample electrode high-frequency power supply and the sample electrode. An ion current applied to the surface of a sample can be accurately monitored buy using the high-frequency sensor and an arithmetic device.

    摘要翻译： 一种用于等离子体处理的方法和装置，其可以精确地监测施加到样品表面的离子电流。 通过涡轮分子泵通过排气口排出预定气体，同时从气体供给装置引入真空室内的气体，并通过压力调节阀将真空室内的压力保持在预定值。 用于等离子体源的高频电源为设置在电介质窗附近的线圈提供高频电力，以在真空室内产生电感耦合等离子体。 提供了用于向样品电极提供高频电力的样品电极的高频电源。 在样品电极高频电源和样品电极之间设置用于样品电极和高频传感器的匹配电路。 使用高频传感器和运算装置，可以精确地监视施加到样品表面的离子电流。

    PLASMA DOPING METHOD
    6.
    发明申请
    PLASMA DOPING METHOD 有权
    等离子喷涂方法

    公开(公告)号：US20090233427A1

    公开(公告)日：2009-09-17

    申请号：US12158852

    申请日：2007-11-13

    申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno

    发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno

    IPC分类号： H01L21/265

    CPC分类号： H01L21/2236

    摘要： An impurity region is formed in a surface of a substrate by exposing the substrate to a plasma generated from a gas containing an impurity in a vacuum chamber. In this process, a plasma doping condition is set with respect to a dose of the impurity to be introduced into the substrate so that a first one of doses in a central portion and in a peripheral portion of the substrate is greater than a second one of the doses during an initial period of doping, with the second dose becoming greater than the first dose thereafter.

    摘要翻译： 通过将衬底暴露于由真空室中含有杂质的气体产生的等离子体，在衬底的表面中形成杂质区。 在该过程中，相对于要引入衬底的杂质的剂量设置等离子体掺杂条件，使得在衬底的中心部分和周边部分中的第一个剂量大于第二个 在掺杂的初始阶段期间的剂量，其中第二剂量变得大于其后的第一剂量。

    PLASMA DOPING METHOD
    9.
    发明申请
    PLASMA DOPING METHOD 失效
    等离子喷涂方法

    公开(公告)号：US20070190759A1

    公开(公告)日：2007-08-16

    申请号：US11741861

    申请日：2007-04-30

    申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Tomohiro Okumura

    发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Tomohiro Okumura

    IPC分类号： H01L21/26 ,  H01L21/42

    CPC分类号： H01L21/2236 ,  H01J37/32412 ,  H01L29/66795

    摘要： A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved. It has been found that, if a bias is applied by irradiating B2H6/He plasma onto a silicon substrate, there is a time at which a dose of boron is made substantially uniform, and the saturation time is comparatively long and ease to stably use, compared with a time at which repeatability of an apparatus control can be secured. The invention has been finalized focusing on the result. That is, if plasma irradiation starts, a dose is initially increased, but a time at which the dose is made substantially uniform without depending on a time variation is continued. In addition, if the time is further increased, the dose is decreased. The dose can be accurately controlled through a process window of the time at which the dose is made substantially uniform without depending on the time variation.

    摘要翻译： 实现了可以精确控制剂量的等离子体掺杂方法。 剂量的面内均匀性得到改善。 已经发现，如果通过将B 2 H 2 H 6 / He / He等离子体照射到硅衬底上施加偏压，则存在硼剂量为 与能够确保装置控制的可重复性的时间相比，饱和时间比较长，易于稳定地使用。 本发明已经确定了结果。 也就是说，如果等离子体照射开始，则剂量最初增加，但是持续施加剂量基本上均匀而不依赖于时间变化的时间。 此外，如果时间进一步增加，则剂量降低。 剂量可以通过在剂量基本均匀的时间的过程窗口中被准确地控制，而不依赖于时间变化。

    Plasma doping method
    10.
    发明申请
    Plasma doping method 失效
    等离子体掺杂法

    公开(公告)号：US20070166846A1

    公开(公告)日：2007-07-19

    申请号：US11647149

    申请日：2006-12-29

    申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Tomohiro Okumura

    发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Tomohiro Okumura

    IPC分类号： H01L21/66 ,  H01L21/04 ,  G01R31/26

    CPC分类号： H01L21/2236 ,  H01J37/32412 ,  H01L29/66795

    摘要： A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved. It has been found that, if a bias is applied by irradiating B2H6/He plasma onto a silicon substrate, there is a time at which a dose of boron is made substantially uniform, and the saturation time is comparatively long and ease to stably use, compared with a time at which repeatability of an apparatus control can be secured. The invention has been finalized focusing on the result. That is, if plasma irradiation starts, a dose is initially increased, but a time at which the dose is made substantially uniform without depending on a time variation is continued. In addition, if the time is further increased, the dose is decreased. The dose can be accurately controlled through a process window of the time at which the dose is made substantially uniform without depending on the time variation.

    摘要翻译： 实现了可以精确控制剂量的等离子体掺杂方法。 剂量的面内均匀性得到改善。 已经发现，如果通过将B 2 H 2 H 6 / He / He等离子体照射到硅衬底上施加偏压，则存在硼剂量为 与能够确保装置控制的可重复性的时间相比，饱和时间比较长，易于稳定地使用。 本发明已经确定了结果。 也就是说，如果等离子体照射开始，则剂量最初增加，但是持续施加剂量基本上均匀而不依赖于时间变化的时间。 此外，如果时间进一步增加，则剂量降低。 剂量可以通过在剂量基本均匀的时间的过程窗口中被准确地控制，而不依赖于时间变化。