摘要:
An optical interleaver for use in a range of telecommunications applications including optical multiplexers/demultiplexers and optical routers. The optical device includes an optical processing loop which allows multi-stage performance characteristics to be achieved with a single physical filtration stage. Optical processing on the first leg and second legs of the loop is asymmetrical thereby improving the integrity of the optical signals by effecting complementary chromatic dispersion on the first and second legs. A fundamental filter cell within the interleaver filters optical signals propagating on each of the two legs of the optical loop which intersects the fundamental filter cell.
摘要:
An optical device that can be used in a range of telecommunications applications including optical multiplexers/demultiplexers and optical routers. The optical device includes an optical processing loop which allows multi-stage performance characteristics to be achieved with a single physical filtration stage. Optical processing on the first leg and second legs of the loop is asymmetrical thereby improving the integrity of the optical signals by effecting complementary chromatic dispersion on the first and second legs. In an embodiment of the invention the optical device includes a fundamental filter cell, a retro reflector and a splitter/combiner. The fundamental filter cell filters optical signals propagating on each of two legs of an optical loop which intersects the fundamental filter cell. The fundamental filter cell operates as a full waveplate to the odd set of channels and a half waveplate to the even set of channels on a selected one of the two legs and as a half waveplate to the odd set of channels and a full waveplate to the even set of channels on a remaining one of the two legs. The retro reflector optically couples with the fundamental filter cell to reflect the optical signals from one of the two legs to an other of the two legs to form the optical loop. The splitter/combiner optically couples between the fundamental filter cell and the retro reflector to split or combine the odd set of channels and the even set of channels depending on the propagation direction of the optical signals along the optical loop.
摘要:
A portion of an optical device is disclosed. In one aspect of the present invention, the device comprises a cylinder formed about an axis having first and second ends, the second end being formed so as to define a segment of an inward-facing concave spherical surface. A module is provided defining a cylinder formed about the axis and having first and second ends and an optical element disposed therein about the axis. The first end of the module is formed so as to define a segment of an outward-facing convex spherical surface, and the convex surface is complimentary in shape to the concave surface. The complimentary concave and convex surfaces of the cylinder and the module are mated so as to allow the optical element to be aligned about a plane forming a predetermined angle with the axis.
摘要:
A single-ended SRAM cell design reduces SRAM size and provides high storage cell noise margin. A virtual ground line is coupled to the source of the driver NFET of each I/O port inverter of each storage cell in a common bitline column. An isolation mechanism couples the virtual ground line to a low reference voltage during reads and during a write of a "0" to a storage cell, and isolates the virtual ground line from the low reference voltage during a write of a "1" to a storage cell. A clamping device is coupled to the virtual ground line to prevent the potential on the virtual ground line from exceeding the threshold voltage of the isolation mechanism and flipping the stored value in any of the other commonly coupled storage cells when a "1" is being written to another of the commonly coupled storage cells.
摘要:
An asymmetric sense amplifier is disclosed for use with single-ended memory arrays. The sense amplifier has a bit input, a reference input, an enable input, and bistable output circuitry. The reference input may simply be tied to V.sub.DD. The bistable output circuitry includes first and second output nodes disposed between first and second pull-up/pull-down paths, respectively. The first pull-up and pull-down paths may include first pull-up and pull-down FET channels, respectively. The second pull-up and pull-down paths may include second pull-up and pull-down FET channels, respectively. The bistable output circuitry is operable to be stable in first and second states. In both states, the output nodes are at opposite potentials. The sense amplifier is asymmetrical in the following sense: Either the second pull-down FET channel is wider than the first pull-down FET channel, or the first pull-up FET channel is wider than the second pull-up FET channel, or both. The result of the asymmetry is that the bistable output circuitry has a bias toward stabilizing in its first state. When the voltage on the bit input is equal to the voltage on the reference input and the enable input is asserted, the bistable output circuitry stabilizes in its first state; but when the voltage on the bit input is less than the voltage on the reference input by more than a threshold amount and the enable input is asserted, the bias is overcome and the bistable output circuitry stabilizes in its second state.
摘要:
A glass optical reflective tap is described that optically connects two optical fibers and may tap a portion of the light that is being communicated between the optical fibers. In one embodiment of the invention, the optical filter includes two D-lenses that operate as focusing or collimator lenses. The first D-lens focuses an optical signal onto a tap filter that allows a majority of the light within an optical signal to pass and also reflects a small portion of optical signal light to a reflective port. The second D-lens focuses the passed light into a transmission port of an optical fiber.
摘要:
A thin film interleaver device is disclosed. The thin film interleaver includes thin film optics. The thin film(s) are formed such that they reflect one group of wavelengths while allowing a second group of wavelengths to pass through the thin film(s). The thin film(s) exhibit a flat top frequency response across the channel bandwidths of the multiplexed signal for which the thin film filter is designed such that the thin film interleaver is less sensitive to wavelength drift and temperature variations.
摘要:
In embodiments of the present invention, a static random access memory (SRAM) device has an array of memory cells in columns and rows. An individual memory cell includes two PMOS pull-up devices coupled to two NMOS pull-down devices. In READ mode and/or STANDBY/NO-OP mode of a column, the two PMOS pull-up devices are effectively strengthened by forward biasing the PMOS n-wells or by utilizing a lower threshold voltage PMOS device by implanting a lower halo dose in the PMOS device. In WRITE mode of a column, the two PMOS pull-up devices are effectively weakened by reverse biasing the PMOS n-wells or by coupling the sources of the NMOS devices to virtual ground (VSSi).
摘要:
A dynamic multi-voltage memory array features SRAM cells that are subjected to different biasing conditions, depending on the operating mode of the cells. The selected SRAM cell receives a first voltage when a read operation is performed, and receives a second voltage when a write operation is performed. By biasing the cell differently for the two distinct operations, a total decoupling of the read and write operations is achieved. The disclosed memory array, as well as future SRAM designs incorporating the multi-voltage capability thus avoid the conflicting requirements of read and write operations. Random single-bit failures of the memory array are reduced, due to the improvement in read stability and write margin.
摘要:
A method and apparatus for a four transistor SRAM comprising an array or block of cells. Each cell comprises a pair of pass transistors and a pair of pull-down transistors. In one embodiment of the invention, when the SRAM block is in a standby mode, the difference between the voltage at the gate and the voltage at the source of each pass transistor is greater than 0, and less than the threshold voltage of the pass transistor. In one embodiment of the invention a ground connection of the memory cell is switched such that when the SRAM block is in the standby mode, the ground connection is a virtual ground connection and when the SRAM block is in an active mode the ground connection is a global ground connection.