Abstract:
There is disclosed a photoconductor for use in an electrophotographic apparatus. The photoconductor includes a conductive substrate and a photoconductive layer formed on the conductive substrate. The photoconductive layer includes an As.sub.2 Se.sub.3 alloy containing 36% to 40% by weight of As and doped with 1,000 to 20,000 parts per million of iodine. A method of manufacturing a photoconductor is also disclosed, which includes forming a photoconductive layer by vapor deposition on a conductive substrate and thermally treating the photoconductive layer at a temperature between 100 and 200 degrees Celsius for a period between 30 and 80 minutes. Advantageously, the photoconductor of the present invention is able to provide high quality images at high printing speeds.
Abstract:
A magnetic carrier for use in a developer for developing latent electrostatic images is composed of magnetic carrier particles with a particle size of 35 .mu.m or less in an amount of 15 wt. % or more, and a developer is composed of the above carrier and a toner. An image formation method is composed of the steps of (a) uniformly charging the surface of a photoconductor to a predetermined polarity, (b) forming latent electrostatic images including low potential portions and high potential portions on the photoconductor by subjecting the charged surface of the photoconductor to selective light radiation corresponding to light images, thereby selectively reducing the potential of the surface of the photoconductor, and (c) developing the thus formed latent electrostatic images to visible toner images by bringing the developer into contact with the latent-electrostatic-images-bearing photoconductor.
Abstract:
An electrophotographic photoreceptor comprising a photosensitive layer containing granular trigonal selenium which has a mean particle diameter of not more than 5 .mu.m and which has absorption peaks in the X-ray diffraction spectrum using CuK.alpha. characteristic X-rays at Bragg angles (2.degree..theta..+-.0.2.degree.) of 23.5.degree., 29.7.degree., 41.4.degree., and 45.4.degree., is disclosed, which has high photosensitivity and low residual potential, maintains its potential characteristics in a stable manner on repeated use, and exhibits sufficient photosensitivity even when applied to high-speed copying.
Abstract:
A method for vacuum depositing a selenium-arsenic coating on a substrate to form a photoreceptor by evaporating selenium with an arsenic concentration of 0.1 to 0.6 percent by weight and discontinuing the evaporation when the weight of the selenium alloy remaining is 2-10 percent of the original weight.
Abstract:
Disclosed is an alloying process which comprises, in the order stated (1) heating in a reaction vessel a mixture of selenium and tellurium from ambient temperature to form about 270.degree. C. to about 330.degree. C. while maintaining the mixture in a quiescent state; (2) maintaining the mixture at from about 270.degree. C. to about 330.degree. C. until the entire mixture has reached substantial equilibrium with respect to temperature while maintaining the mixture in a quiescent state; (3) subsequently heating the mixture from the range of from about 270.degree. C. to about 330.degree. C. to the range of from about 500.degree. C. to about 580.degree. C. while maintaining the mixture in a quiescent state; (4) maintaining the mixture at from about 500.degree. C. to about 580.degree. C. until the entire mixture has reached substantial equilibrium with respect to temperature while maintaining the mixture in a quiescent state; (5) thereafter maintaining the mixture at from about 500.degree. C. to about 580.degree. C. for from about 0.75 hour to about 1.5 hours while vigorously agitating the mixture; (6) subsequent to agitation, reducing the temperature of the mixture from the range of from about 500.degree. C. to about 580.degree. C. to the range of from about 425.degree. C. to about 450.degree. C. while maintaining the mixture in a quiescent state; (7) subsequently maintaining the temperature of the mixture at from about 425.degree. C. to about 450.degree. C. for from about 4 hours to about 7 hours while maintaining the mixture in a quiescent state; (8) reducing the temperature of the mixture from the range of from about 425.degree. C. to about 450.degree. C. to the range of from about 290.degree. C. to about 350.degree. C. while maintaining the mixture in a quiescent state; and (9) removing the mixture from the reaction vessel. Also disclosed is a process for preparing an imaging member which comprises preparing a selenium-tellurium alloy by the above process and vacuum evaporating the alloy onto a substrate.
Abstract:
An improved electrophotographic photoreceptor of a function separation type for long wavelength light is provided which comprises an As.sub.2 Se.sub.3 carrier transport layer, a 30 to 50 wt % Te-Se alloy carrier generation layer and an As.sub.2 Se.sub.3 surface protective layer and an outer layer of a transparent insulating material.
Abstract translation:提供了一种用于长波长光的功能分离型改进的电子照相感光体,其包括As 2 Se 3载流子传输层,30至50重量%的Te-Se合金载体产生层和As 2 Se 3表面保护层和外部透明绝缘体 材料。
Abstract:
The present invention provides a photosensitive body of Se-based function separation type to be used in electrophotographic equipment which employs long wavelength light for writing. Such a body exhibits outstanding abrasion resistance and heat resistance without sacrificing good electrical properties. This is accomplished by interposing an intermediate layer of As-Se alloy between the surface protective layer and the chargeable layer. The intermediate layer contains As in an increasing concentration gradient across the section of the layer from the chargeable layer to the surface protective layer. This graded As concentration causes the coefficient of thermal expansion to gradually decrease across the intermediate layer section in the direction from the chargeable layer to the surface protective layer. Thus the intermediate layer prevents the surface protective layer from thermal stress and cracking by acting as a transition buffer between the differing properties of the protective layer and chargeable layer.
Abstract:
A process for preparing an electrophotographic imaging member comprising providing large particles of an alloy comprising selenium, tellurium and arsenic, the large particles having an average particle size of at least about 300 micrometers and an average weight of less than about 1000 mg, mechanically abrading the surfaces of the large particles while maintaining the substantial surface integrety of the large particles to form between about 3 percent by weight to about 20 percent by weight dust particles based on the total weight of the alloy prior to mechanical abrasion.
Abstract:
An electrophotographic recording material, composed of an electrically conductive substrate; a first layer provided on the electrically conductive substrate and composed of an amorphous selenium-tellurium alloy containing form 0.05 to 15 weight % tellurium; a second layer disposed on the first layer and composed of an amorphous selenium-tellurium alloy containing from 15 to 60 weight % tellurium; and a third layer provided on the second layer and composed of an amorphous alloy of selenium and from 0.05 to 5 weight % of one arsenic or tellurium. The electrophotographic recording material is particularly useful in an electrophotographic recording system which includes an infrared radiation means, such as an infrared solid state laser.
Abstract:
Disclosed is an improved process for the preparation of a stable colloidal dispersion of a selenium tellurium alloy, which comprises providing a solution with a polymer therein; adding to the solution a selenium ester and a tellurium ester; and subsequently subjecting the resulting mixture to a reduction reaction by adding thereto a reducing agent whereby there is generated selenium tellurium particles of a diameter of from about 0.01 micron to about 0.3 micron in solution.