中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

126 records (took 0.017 seconds)

    Fabrication method for a two-bit flash memory cell
    41.
    发明授权
    Fabrication method for a two-bit flash memory cell 失效
    两位闪存单元的制造方法

    公开(公告)号：US06303439B1

    公开(公告)日：2001-10-16

    申请号：US09449297

    申请日：1999-11-24

    Applicant: Robin Lee ,  Chih-Hung Lin

    Inventor： Robin Lee ,  Chih-Hung Lin

    IPC: H01L218247

    CPC classification number: H01L29/66825 ,  H01L21/28273 ,  H01L29/7887

    Abstract: A method for fabricating a two-bit flash memory cell is described in which a substrate with a trench formed therein is provided. A conformal tunnel oxide layer is then formed on the substrate, followed by forming polysilicon spacers on the portion of the tunnel oxide layer which covers the sidewalls of the trench. The polysilicon spacers are separated into a first polysilicon spacer on the right sidewall and a second polysilicon spacer on the left sidewall. Thereafter, a gate oxide layer is formed on the polysilicon spacers, followed by forming a polysilicon gate on the gate oxide layer in the substrate. Subsequently, a source/drain region is formed on both sides of the polysilicon gate in the substrate.

    Abstract translation: 描述了一种用于制造双位闪存单元的方法，其中提供了形成有沟槽的衬底。 然后在衬底上形成保形隧道氧化物层，随后在覆盖沟槽侧壁的隧道氧化物层的部分上形成多晶硅间隔物。 多晶硅间隔物被分离成右侧壁上的第一多晶硅间隔物和左侧壁上的第二多晶硅间隔物。 此后，在多晶硅间隔物上形成栅极氧化层，随后在衬底的栅极氧化物层上形成多晶硅栅极。 随后，在衬底中的多晶硅栅极的两侧上形成源/漏区。

    Method of fabricating flash erasable programmable read only memory
    42.
    发明授权
    Method of fabricating flash erasable programmable read only memory 失效
    制造闪存可擦写可编程只读存储器的方法

    公开(公告)号：US06207504B1

    公开(公告)日：2001-03-27

    申请号：US09223337

    申请日：1998-12-30

    Applicant: Alex Hsieh ,  Chun-Ming Wu ,  Chih-Hung Lin

    Inventor： Alex Hsieh ,  Chun-Ming Wu ,  Chih-Hung Lin

    IPC: H01L21336

    CPC classification number: H01L27/11521 ,  H01L27/115

    Abstract: A method of fabricating flash erasable programmable read only memory. A substrate having an isolation structure is provided. A tunnel oxide layer and a floating gate layer are formed in sequence over substrate and are patterned. An ion implantation is performed and a first doped region is formed in the substrate. An oxidation step is performed to form a first oxide layer over the substrate. A nitride/oxide layer and a control gate layer are formed in sequence over the substrate. The control gate layer, the nitride/oxide layer, the first oxide layer, and the floating gate layer are patterned until the substrate is exposed. An ion implantation step is performed to form a common source region and a drain region in the substrate. Spacers are formed over the sidewalls of the control gate layer, the nitride/oxide layer, the first oxide layer, and the floating gate layer. A self-aligned silicide step is performed to form silicide layers over the control gate layer, the common source region, and the drain region.

    Abstract translation: 一种制造闪存可擦除可编程只读存储器的方法。 提供具有隔离结构的基板。 在衬底上依次形成隧道氧化物层和浮栅，并进行图案化。 进行离子注入并且在衬底中形成第一掺杂区域。 执行氧化步骤以在衬底上形成第一氧化物层。 在衬底上依次形成氮化物/氧化物层和控制栅极层。 对控制栅极层，氮化物/氧化物层，第一氧化物层和浮置栅极层进行图案化，直到基板露出为止。 执行离子注入步骤以在衬底中形成公共源极区域和漏极区域。 间隔件形成在控制栅极层，氮化物/氧化物层，第一氧化物层和浮动栅极层的侧壁上。 执行自对准硅化物步骤以在控制栅极层，公共源极区域和漏极区域上形成硅化物层。

    Method of fabricating EPROM memory by individually forming gate oxide and coupling insulator
    43.
    发明授权
    Method of fabricating EPROM memory by individually forming gate oxide and coupling insulator 失效
    通过单独形成栅氧化物和耦合绝缘体来制造EPROM存储器的方法

    公开(公告)号：US5716874A

    公开(公告)日：1998-02-10

    申请号：US603248

    申请日：1996-02-20

    Applicant: Joe Ko ,  Gary Hong ,  Chih-Hung Lin

    Inventor： Joe Ko ,  Gary Hong ,  Chih-Hung Lin

    IPC: H01L21/336 ,  H01L21/8247

    CPC classification number: H01L29/66825

    Abstract: A method of fabricating an EPROM memory increases a coupling ratio and reduces lateral diffusion by forming a gate oxide layer and a coupling insulator individually. A substrate is provided with a field oxide layer to isolate a predetermined active area. A gate oxide layer is formed on the substrate. On the field oxide layer and the gate oxide layer, a polysilicon layer is deposited and defined, whereby a portion of this polysilicon layer and gate oxide layer form a gate electrode. Using the gate electrode as a mask, the substrate is implanted with impurities to provide source and drain electrodes. A dielectric layer is formed on polysilicon layer. A contact window (via) is formed in a predetermined area of dielectric layer. An insulator is deposited and defined by etching, on dielectric layer and the contact window. On the insulator and dielectric layer, a metal contact layer is deposited and defined to cover the insulator.

    Abstract translation: 制造EPROM存储器的方法通过单独形成栅极氧化物层和耦合绝缘体来增加耦合比并减小横向扩散。 衬底设置有场氧化物层以隔离预定的有效面积。 在衬底上形成栅氧化层。 在场氧化物层和栅极氧化物层上沉积并限定多晶硅层，由此该多晶硅层和栅极氧化物层的一部分形成栅电极。 使用栅电极作为掩模，衬底被注入杂质以提供源极和漏极。 介电层形成在多晶硅层上。 在电介质层的预定区域中形成接触窗（通孔）。 通过在电介质层和接触窗上进行蚀刻来沉积并限定绝缘体。 在绝缘体和电介质层上，沉积和限定金属接触层以覆盖绝缘体。

    Structure of Magnetic Inductive Coil Module
    45.
    发明申请
    Structure of Magnetic Inductive Coil Module 有权

    公开(公告)号：US20210225579A1

    公开(公告)日：2021-07-22

    申请号：US16792273

    申请日：2020-02-16

    Applicant: Chih-Hung Lin ,  Kun-Chuan Chang

    Inventor： Chih-Hung Lin ,  Kun-Chuan Chang

    IPC: H01F27/28 ,  H01F27/24 ,  H01F27/06

    Abstract: A coil module includes a first coil set; a second coil set, including a first coil body, a second coil body and an insulative separator disposed between the first coil body and the second coil body, the separator having an adopting hole, the first coil body having an open winding surrounding the adapting hole and fixed on a side of the separator, the second coil body having an open winding surrounding the adapting hole and fixed on another side of the separator; and a coil base sheathing the second coil set with exposing the adopting hole. The first coil set surrounds the adopting hole and is fixed on the coil base to form a coil module.

    FUEL CELL WITH MULTIPLE ELECTRIC CONNECTORS
    47.
    发明申请
    FUEL CELL WITH MULTIPLE ELECTRIC CONNECTORS 有权

    公开(公告)号：US20210218035A1

    公开(公告)日：2021-07-15

    申请号：US17148573

    申请日：2021-01-14

    Applicant: Rong-Jie Chen ,  Chih Hung Lin

    Inventor： Rong-Jie Chen ,  Chih Hung Lin

    IPC: H01M4/86 ,  H01M4/90 ,  H01M8/0247 ,  H01M8/0221

    Abstract: A zinc-air fuel cell with multiple electric connectors includes: a case forming a space; multiple gas chambers disposed in the space; two air electrode layers disposed in the space and serving as positive electrodes for discharging; a metal layer disposed in the space and serving as a positive electrode for charging; a zinc material disposed in the space and serving as a negative electrode; multiple separators disposed in the space so that the air electrode layers, the zinc material and the metal layer are separately arranged; an electrolyte disposed in the space, capable of flowing to pass through the separators and in contact with the air electrode layers, the metal layer and the zinc material so that the air electrode layers, the zinc material and the metal layer are respectively electrically connected.

    High-voltage battery charging simulation system and operating method thereof
    48.
    发明授权
    High-voltage battery charging simulation system and operating method thereof 有权
    高压电池充电模拟系统及其运行方法

    公开(公告)号：US09250295B2

    公开(公告)日：2016-02-02

    申请号：US13553811

    申请日：2012-07-19

    Applicant: Shean-Kwang Chou ,  Hung-Hsi Lin ,  Chih-Hung Lin ,  Sheng-Hua Chen

    Inventor： Shean-Kwang Chou ,  Hung-Hsi Lin ,  Chih-Hung Lin ,  Sheng-Hua Chen

    IPC: G06G7/54 ,  G01R31/36

    CPC classification number: G01R31/36 ,  G01R31/3651

    Abstract: The present invention relates to a high-voltage battery charging simulation system that includes a simulation high-voltage battery pack, a simulation battery management system, a multi-party communication device, and a charging station. The voltage of the simulation high-voltage battery pack can be calculated and updated immediately by the simulation battery management system to simulate the feature of real battery pack, so that it can detect the operation of the multi-party communication device and the charging station.

    Abstract translation: 本发明涉及一种高压电池充电模拟系统，其包括模拟高电压电池组，模拟电池管理系统，多方通信装置和充电站。 仿真高压电池组的电压可以通过模拟电池管理系统立即计算和更新，以模拟实际电池组的特征，从而可以检测多方通信设备和充电站的运行情况。

    Liquid-tight slide fastener
    49.
    发明授权
    Liquid-tight slide fastener 有权
    液密拉链

    公开(公告)号：US09015908B2

    公开(公告)日：2015-04-28

    申请号：US13512504

    申请日：2009-11-30

    Applicant: Satoshi Matsumoto ,  Chih Hung Lin ,  Ke Jyun Wu

    Inventor： Satoshi Matsumoto ,  Chih Hung Lin ,  Ke Jyun Wu

    IPC: A44B19/32 ,  A44B19/08 ,  B05D1/38 ,  B05D5/00 ,  A44B19/02

    CPC classification number: A44B19/32 ,  A44B19/02 ,  Y10T24/25 ,  Y10T24/2505 ,  Y10T24/2514 ,  Y10T24/2539 ,  Y10T24/2543

    Abstract: There is provided a liquid-tight slide fastener capable of sufficiently ensuring waterproof property regardless of where fastener elements are formed and capable of sufficiently ensuring attachment strength of the fastener elements to fastener tapes provided with liquid-tight layers. There is also provided a manufacturing method for the liquid-tight slide fastener. The liquid-tight slide fastener includes a pair of fastener tapes that include a pair of tape members, core sections respectively provided on opposing tape edges of the pair of tape members, and liquid-tight layers formed on one side of the pair of tape members; a pair of fastener element rows; and a slider. The liquid-tight layers are formed with gaps to the core sections in a width direction of the fastener tapes. The fastener elements are attached to the core sections.

    Abstract translation: 提供了一种能够充分确保防水性能的液密拉链，而不管紧固件元件何时形成，并且能够充分确保拉链件与设置有液密层的拉链带的附接强度。 还提供了一种用于液密拉链的制造方法。 液密拉链包括一对拉链带，其包括一对带构件，分别设置在一对带构件的相对带边缘上的芯部分，以及形成在一对带构件的一侧上的液密层 ; 一对拉链牙列; 和滑块。 液密层在拉链带的宽度方向上与芯部分形成间隙。 紧固件元件附接到芯部分。

Patent Agency Ranking