公开(公告)号：US20110086441A1

公开(公告)日：2011-04-14

申请号：US12997543

申请日：2008-06-12

申请人： Norihito KAWAGUCHI ,  Ryusuke KAWAKAMI ,  Kenichiro NISHIDA ,  Miyuki MASAKI ,  Masaru MORITA ,  Atsushi YOSHINOUCHI

发明人： Norihito KAWAGUCHI ,  Ryusuke KAWAKAMI ,  Kenichiro NISHIDA ,  Miyuki MASAKI ,  Masaru MORITA ,  Atsushi YOSHINOUCHI

IPC分类号： H01L21/66 ,  B23K26/06

CPC分类号： B23K26/0732 ,  B23K26/046 ,  B23K26/0665 ,  G02B27/0905 ,  G02B27/0966 ,  G02B27/48 ,  H01L21/02678

摘要： In laser annealing using a solid state laser, a focus position of a minor axial direction of a rectangular beam is easily corrected depending on positional variation of a laser irradiated portion of a semiconductor film. By using a minor-axis condenser lens 29 condensing incident light in a minor axial direction and a projection lens 30 projecting light, which comes from the minor-axis condenser lens 29, onto a surface of a semiconductor film 3, laser beam 1 is condensed on the surface of the semiconductor film 3 in the minor axial direction of a rectangular beam. The positional variation of a vertical direction of the semiconductor film 3 in a laser irradiated portion of the semiconductor film 3 is detected by a positional variation detector 31, and the minor-axis condenser lens 29 is moved in an optical axis direction based on a value of the detection.

摘要翻译： 在使用固态激光的激光退火中，根据半导体膜的激光照射部的位置变化容易校正矩形光束的小轴方向的聚焦位置。 通过使用将小轴聚光的次轴聚光透镜29和将来自短轴聚光透镜29的光投射到半导体膜3的表面上的投影透镜30，激光束1被冷凝 在半导体膜3的矩形梁的小轴向的表面上。 半导体膜3的激光照射部分中的半导体膜3的垂直方向的位置变化由位置变化检测器31检测，并且短轴聚光透镜29基于光轴方向在光轴方向上移动 的检测。

公开(公告)号：US07833871B2

公开(公告)日：2010-11-16

申请号：US11916687

申请日：2006-09-12

申请人： Ryusuke Kawakami ,  Kenichirou Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

发明人： Ryusuke Kawakami ,  Kenichirou Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

IPC分类号： H01L21/331 ,  H01L21/8222

CPC分类号： H01L21/02675 ,  B23K26/0613 ,  B23K26/0732 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296

摘要： A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.

摘要翻译： 一种激光退火方法，用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火，所述方法包括以下步骤：产生线性偏振矩形激光束，其垂直于前进方向的截面为矩形 具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束，使矩形激光束被引入到基板的表面，并且设定 矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。