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公开(公告)号：US20250081619A1
公开(公告)日：2025-03-06
申请号：US18951904
申请日：2024-11-19
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI
IPC: H01L27/12 , H01L29/786
Abstract: A highly flexible display device and a method for manufacturing the display device are provided. A transistor including a light-transmitting semiconductor film, a capacitor including a first electrode, a second electrode, and a dielectric film between the first electrode and the second electrode, and a first insulating film covering the semiconductor film are formed over a flexible substrate. The capacitor includes a region where the first electrode and the dielectric film are in contact with each other, and the first insulating film does not cover the region.
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公开(公告)号：US20250078783A1
公开(公告)日：2025-03-06
申请号：US18952564
申请日：2024-11-19
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Hajime KIMURA , Yoshiaki OIKAWA , Kentaro HAYASHI
IPC: G09G5/10 , B60K35/234 , G06V20/59
Abstract: A moving object including a display apparatus capable of performing highly visible display is provided. The moving object includes a display unit, an imaging unit, an arithmetic unit, and a control unit. The display unit has a function of displaying a display image. The imaging unit has a function of obtaining a first captured image including the display image and an external view overlapping with the display image. The arithmetic unit has a function of comparing a color of the display image and a color of the external view and correcting the color of the display image on the basis of a comparison result. The control unit has a function of controlling running of the moving object on the basis of the first captured image.
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公开(公告)号：US20250076932A1
公开(公告)日：2025-03-06
申请号：US18905374
申请日：2024-10-03
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yoshiharu HIRAKATA , Hiroyuki MIYAKE , Seiko INOUE , Shunpei YAMAZAKI
Abstract: A display device with low power consumption is provided. Furthermore, a display device in which an image is displayed in a region that can be used in a folded state is provided. The conceived display device includes a display portion that can be opened and folded, a sensing portion that senses a folded state of the display portion, and an image processing portion that generates, when the display portion is in the folded state, an image in which a black image is displayed in part of the display portion.
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44.发明申请公开(公告)号：US20250076712A1
公开(公告)日：2025-03-06
申请号：US18936635
申请日：2024-11-04
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Ryo HATSUMI , Daisuke KUBOTA , Hiroyuki MIYAKE
IPC: G02F1/1343 , G02F1/1333 , G02F1/1337 , G02F1/1362
Abstract: A display device with less light leakage and excellent contrast is provided. A display device having a high aperture ratio and including a large-capacitance capacitor is provided. A display device in which wiring delay due to parasitic capacitance is reduced is provided. A display device includes a transistor over a substrate, a pixel electrode connected to the transistor, a signal line electrically connected to the transistor, a scan line electrically connected to the transistor and intersecting with the signal line, and a common electrode overlapping with the pixel electrode and the signal line with an insulating film provided therebetween. The common electrode includes stripe regions extending in a direction intersecting with the signal line.
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公开(公告)号：US20250076697A1
公开(公告)日：2025-03-06
申请号：US18954090
申请日：2024-11-20
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Yoshiharu Hirakata , Tetsuji ISHITANI , Daisuke KUBOTA , Ryo HATSUMI , Masaru NAKANO , Takashi HAMADA
IPC: G02F1/1333 , G02F1/1335 , G02F1/1362
Abstract: A display device including a peripheral circuit portion with high operation stability. The display device includes a first substrate and a second substrate. A first insulating layer is on a first plane of the first substrate, and a second insulating layer is on a first plane of the second substrate. An area of the first plane of the first substrate is the same as an area of the first plane of the second substrate. The first plane of the first substrate and the first plane of the second substrate face each other. A bonding layer is between the first insulating layer and the second insulating layer. A protection film is in contact with the first substrate, the first insulating layer, the bonding layer, the second insulating layer, and the second substrate.
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Patent Agency Ranking
公开(公告)号：US12244007B2
公开(公告)日：2025-03-04
申请号：US18608249
申请日：2024-03-18
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Yohei Momma , Hiroshi Kadoma , Yoshihiro Komatsu , Shiori Saga , Shunpei Yamazaki
Abstract: A positive electrode active material in which a capacity decrease caused by charge and discharge cycles is suppressed is provided. Alternatively, a positive electrode active material having a crystal structure that is unlikely to be broken by repeated charging and discharging is provided. The positive electrode active material contains titanium, nickel, aluminum, magnesium, and fluorine, and includes a region where titanium is unevenly distributed, a region where nickel is unevenly distributed, and a region where magnesium is unevenly distributed in a projection on its surface. Aluminum is preferably unevenly distributed in a surface portion, not in the projection, of the positive electrode active material.
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公开(公告)号：US12243943B2
公开(公告)日：2025-03-04
申请号：US18207176
申请日：2023-06-08
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Takahiro Sato , Yasutaka Nakazawa , Takayuki Cho , Shunsuke Koshioka , Hajime Tokunaga , Masami Jintyou
IPC: H01L27/12 , G02F1/1362 , G02F1/1368 , H01L21/02 , H01L21/306 , H01L21/465 , H01L29/04 , H01L29/06 , H01L29/10 , H01L29/24 , H01L29/423 , H01L29/66 , H01L29/786 , H10K59/123
Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.
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公开(公告)号：US12243459B2
公开(公告)日：2025-03-04
申请号：US18096117
申请日：2023-01-12
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Kouhei Toyotaka , Kazunori Watanabe , Susumu Kawashima , Daisuke Kubota , Tetsuji Ishitani , Akio Yamashita
Abstract: A flip-flop circuit is provided. A driver circuit is provided. The flip-flop circuit includes first to fifth input terminals and first to third output terminals, the first input terminal is supplied with a first trigger signal, the second input terminal is supplied with a second trigger signal, the third input terminal is supplied with a batch selection signal, the fourth input terminal is supplied with a first pulse width modulation signal, and the fifth input terminal is supplied with a second pulse width modulation signal. The first output terminal supplies a first selection signal in response to the first pulse width modulation signal in a period from supply of the first trigger signal to supply of the second trigger signal, the first output terminal supplies the first selection signal in a period during which the batch selection signal is supplied, the second output terminal supplies a second selection signal in response to the second pulse width modulation signal in the period from the supply of the first trigger signal to the supply of the second trigger signal, and the third output terminal supplies a third trigger signal.
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公开(公告)号：US12243447B2
公开(公告)日：2025-03-04
申请号：US18131435
申请日：2023-04-06
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Yukinori Shima , Masami Jintyou
IPC: G09F9/30 , H01L29/786 , H10K50/00 , H10K59/00
Abstract: A semiconductor device that can be highly integrated is provided.
The semiconductor device includes a semiconductor layer, a first insulating layer, a second insulating layer, a third insulating layer, and a first conductive layer. The third insulating layer is positioned over the semiconductor layer and includes a first opening over the semiconductor layer. The first conductive layer is positioned over the semiconductor layer, the first insulating layer is positioned between the first conductive layer and the semiconductor layer, and the second insulating layer is provided in a position that is in contact with a side surface of the first opening, the semiconductor layer, and the first insulating layer. The semiconductor layer includes a first portion overlapping with the first insulating layer, a pair of second portions between which the first portion is sandwiched and which overlap with the second insulating layer, and a pair of third portions between which the first portion and the pair of second portions are sandwiched and which overlap with neither the first insulating layer nor the second insulating layer. The first portion has a smaller width than the first opening and has a thinner shape of the semiconductor layer than the second portions, and the second portions have a thinner shape of the semiconductor layer than the third portions.-
公开(公告)号：US20250072212A1
公开(公告)日：2025-02-27
申请号：US18723662
申请日：2022-12-15
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Daiki NAKAMURA , Hisao IKEDA , Ryo HATSUMI , Takeya HIROSE , Yosuke TSUKAMOTO
IPC: H10K59/121 , H10K59/35
Abstract: An electronic device with low power consumption is provided. The electronic device includes a first display device and a second display device. The first display device includes a first display portion, and the second display device includes a second display portion. A plurality of first pixels are arranged in the first display portion, and a plurality of second pixels are arranged in the second display portion. The first display device overlaps with the second display device. The second display portion is provided to surround at least part of the first display portion in a plan view. The area occupied by each of the first pixels is smaller than the area occupied by each of the second pixels.
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