公开(公告)号：US20090242870A1

公开(公告)日：2009-10-01

申请号：US12193588

申请日：2008-08-18

申请人： Gyu Beom KIM ,  Sang Joon LEE ,  Chang Suk HAN ,  Kwang Choong KIM

发明人： Gyu Beom KIM ,  Sang Joon LEE ,  Chang Suk HAN ,  Kwang Choong KIM

IPC分类号： H01L33/00

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/3063 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04

摘要： Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided.

公开(公告)号：US20090191274A1

公开(公告)日：2009-07-30

申请号：US10585631

申请日：2005-01-14

申请人： Sang-Joon Lee ,  Hee-Jong Shin ,  Jong-Lae Lim ,  Seok-Kyu Lee ,  Soo-Yeon Moon ,  Shin-Jung Park ,  Taek-Hwan Shin

发明人： Sang-Joon Lee ,  Hee-Jong Shin ,  Jong-Lae Lim ,  Seok-Kyu Lee ,  Soo-Yeon Moon ,  Shin-Jung Park ,  Taek-Hwan Shin

IPC分类号： A61K9/12 ,  A61K31/4422

CPC分类号： A61K9/5015 ,  A61K9/1623 ,  A61K9/1635 ,  A61K9/1652 ,  A61K9/2077 ,  A61K9/2081 ,  A61K9/5026 ,  A61K9/5047 ,  A61K31/4422

摘要： The present invention relates to a coated particle of amlodipine maleate and a pharmaceutical composition for cardiovascular disease (CVD) comprising the coated particle of amlodipine maleate. The pharmaceutical composition of the present invention has stable bioavailability due to sufficient dissolution rate and prevents decomposition reaction of amlodipine to thereby being formulated with formulation-stability equal to or higher than amlodipine besylate under long storage.

摘要翻译： 本发明涉及马来酸氨氯地平的包衣颗粒和用于心血管疾病（CVD）的药物组合物，其包含马来酸氨氯地平的包衣颗粒。 本发明的药物组合物由于足够的溶解速率而具有稳定的生物利用度，并且防止了氨氯地平的分解反应，从而在长期储存下配制成等于或高于苯磺酸氨氯地平的制剂稳定性。

公开(公告)号：US20080237570A1

公开(公告)日：2008-10-02

申请号：US12057842

申请日：2008-03-28

申请人： Joo Won CHOI ,  Dong Seon LEE ,  Gyu Beom KIM ,  Sang Joon LEE

发明人： Joo Won CHOI ,  Dong Seon LEE ,  Gyu Beom KIM ,  Sang Joon LEE

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/12 ,  H01L33/32 ,  H01S5/34333

摘要： A light emitting diode (LED) having well and/or barrier layers with a superlattice structure is disclosed. An LED has an active region between an N-type GaN-based semiconductor compound layer and a P-type GaN-based semiconductor compound layer, wherein the active region comprises well and/or barrier layers with a superlattice structure. As the well and/or barrier layers with a superlattice structure are employed, it is possible to reduce occurrence of defects caused by lattice mismatch between the well layer and the barrier layer.

摘要翻译： 公开了具有超晶格结构的阱和/或势垒层的发光二极管（LED）。 LED在N型GaN基半导体化合物层和P型GaN基半导体化合物层之间具有有源区，其中有源区包括具有超晶格结构的阱和/或势垒层。 由于采用具有超晶格结构的阱和/或势垒层，可以减少由阱层与阻挡层之间的晶格失配引起的缺陷的发生。