公开(公告)号：US20080237570A1

公开(公告)日：2008-10-02

申请号：US12057842

申请日：2008-03-28

申请人： Joo Won CHOI ,  Dong Seon LEE ,  Gyu Beom KIM ,  Sang Joon LEE

发明人： Joo Won CHOI ,  Dong Seon LEE ,  Gyu Beom KIM ,  Sang Joon LEE

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/12 ,  H01L33/32 ,  H01S5/34333

摘要： A light emitting diode (LED) having well and/or barrier layers with a superlattice structure is disclosed. An LED has an active region between an N-type GaN-based semiconductor compound layer and a P-type GaN-based semiconductor compound layer, wherein the active region comprises well and/or barrier layers with a superlattice structure. As the well and/or barrier layers with a superlattice structure are employed, it is possible to reduce occurrence of defects caused by lattice mismatch between the well layer and the barrier layer.

摘要翻译： 公开了具有超晶格结构的阱和/或势垒层的发光二极管（LED）。 LED在N型GaN基半导体化合物层和P型GaN基半导体化合物层之间具有有源区，其中有源区包括具有超晶格结构的阱和/或势垒层。 由于采用具有超晶格结构的阱和/或势垒层，可以减少由阱层与阻挡层之间的晶格失配引起的缺陷的发生。

公开(公告)号：US20130134386A1

公开(公告)日：2013-05-30

申请号：US13484120

申请日：2012-05-30

申请人： Joo Won CHOI ,  Yoo Dae HAN ,  Jeong Hun HEO

发明人： Joo Won CHOI ,  Yoo Dae HAN ,  Jeong Hun HEO

IPC分类号： H01L33/04

CPC分类号： H01L33/04 ,  B82Y20/00 ,  B82Y99/00 ,  H01L33/06 ,  Y10S977/773

摘要： An exemplary embodiment of the present invention includes a light emitting diode including a strain-enhanced well layer. The light emitting diode includes an n-contact layer, an active layer having a barrier layer and a well layer, a p-contact layer, and a strain-enhancing layer configured to enhance a strain applied to the well layer.

摘要翻译： 本发明的示例性实施例包括包括应变增强阱层的发光二极管。 发光二极管包括n接触层，具有阻挡层和阱层的有源层，p接触层和构造为增强施加到阱层的应变的应变增强层。