公开(公告)号：US20080237570A1

公开(公告)日：2008-10-02

申请号：US12057842

申请日：2008-03-28

申请人： Joo Won CHOI ,  Dong Seon LEE ,  Gyu Beom KIM ,  Sang Joon LEE

发明人： Joo Won CHOI ,  Dong Seon LEE ,  Gyu Beom KIM ,  Sang Joon LEE

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/12 ,  H01L33/32 ,  H01S5/34333

摘要： A light emitting diode (LED) having well and/or barrier layers with a superlattice structure is disclosed. An LED has an active region between an N-type GaN-based semiconductor compound layer and a P-type GaN-based semiconductor compound layer, wherein the active region comprises well and/or barrier layers with a superlattice structure. As the well and/or barrier layers with a superlattice structure are employed, it is possible to reduce occurrence of defects caused by lattice mismatch between the well layer and the barrier layer.

摘要翻译： 公开了具有超晶格结构的阱和/或势垒层的发光二极管（LED）。 LED在N型GaN基半导体化合物层和P型GaN基半导体化合物层之间具有有源区，其中有源区包括具有超晶格结构的阱和/或势垒层。 由于采用具有超晶格结构的阱和/或势垒层，可以减少由阱层与阻挡层之间的晶格失配引起的缺陷的发生。

公开(公告)号：US20080308787A1

公开(公告)日：2008-12-18

申请号：US12137708

申请日：2008-06-12

申请人： Dong Seon LEE ,  Gyu Beom KIM

发明人： Dong Seon LEE ,  Gyu Beom KIM

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/06

摘要： Disclosed is a light emitting diode (LED) having an active region of a multiple quantum well structure in which well layers and barrier layers are alternately laminated between a GaN-based N-type compound semiconductor layer and a GaN-based P-type compound semiconductor layer. The LED includes a middle barrier layer having a bandgap relatively wider than the first barrier layer adjacent to the N-type compound semiconductor layer and the n-th barrier layer adjacent to the P-type compound semiconductor layer. The middle barrier layer is positioned between the first and n-th barrier layers. Accordingly, positions at which electrons and holes are combined in the multiple quantum well structure to emit light can be controlled, and luminous efficiency can be enhanced. Furthermore, an LED is provided with enhanced luminous efficiency using a bandgap engineering or impurity doping technique.

摘要翻译： 公开了一种具有多量子阱结构的有源区的发光二极管（LED），其中阱层和势垒层交替层叠在GaN基N型化合物半导体层和GaN基P型化合物半导体之间 层。 LED包括具有比与N型化合物半导体层相邻的第一势垒层和与P型化合物半导体层相邻的第n势垒层相对宽的带隙的中间势垒层。 中间阻挡层位于第一和第n阻挡层之间。 因此，可以控制电子和空穴在多量子阱结构中组合以发光的位置，并且可以提高发光效率。 此外，使用带隙工程或杂质掺杂技术来提供LED具有增强的发光效率。