公开(公告)号：US5990015A

公开(公告)日：1999-11-23

申请号：US41567

申请日：1998-03-12

Applicant: Tony Lin ,  Yimin Huang ,  Tri-Rung Yew

Inventor： Tony Lin ,  Yimin Huang ,  Tri-Rung Yew

IPC: H01L21/768 ,  H01L21/44

CPC classification number: H01L21/76813 ,  H01L21/76807

Abstract: A dual damascene process can be used to form an interconnect. A first dielectric layer is formed on a semiconductor substrate having a device layer formed thereon. A stop layer is formed on the first dielectric layer and a second dielectric layer is formed on the stop layer. A hard mask layer is formed and patterned on the second dielectric layer so that an opening is formed to expose the second dielectric layer therewithin. The second dielectric layer, the stop layer and a part of the first dielectric layer are etched within the opening by photolithography and etching, so that a contact window is formed. Using the hard mask layer as a hard mask, an etching is performed so that a metal trench penetrating through the second dielectric layer is formed, and the device layer within the contact window is exposed.

Abstract translation: 可以使用双镶嵌工艺来形成互连。 在其上形成有器件层的半导体衬底上形成第一介电层。 在第一电介质层上形成阻挡层，在停止层上形成第二电介质层。 在第二电介质层上形成并图案化硬掩模层，从而形成开口以在其中露出第二介电层。 通过光刻和蚀刻在开口内蚀刻第二介电层，停止层和第一介电层的一部分，从而形成接触窗。 使用硬掩模层作为硬掩模，进行蚀刻，从而形成穿过第二介电层的金属沟槽，并且暴露接触窗内的器件层。

公开(公告)号：US5972763A

公开(公告)日：1999-10-26

申请号：US9335

申请日：1998-01-20

Applicant: Jih-Wen Chou ,  Tony Lin

Inventor： Jih-Wen Chou ,  Tony Lin

IPC: H01L21/336 ,  H01L29/49 ,  H01L29/78

CPC classification number: H01L29/66598 ,  H01L29/4983 ,  H01L29/4991 ,  H01L29/6659 ,  H01L29/7833

Abstract: A method of fabricating an air-gap spacer of a metal-oxide-semiconductor device includes the following steps. First, a substrate having a gate oxide layer and a polysilicon layer successively formed is provided. The polysilicon layer and the gate oxide layer are patterned to form a gate electrode region. A silicon nitride layer and an oxide layer are successively formed on the surface of the substrate and the surface of the gate electrode region. The oxide layer and the silicon nitride layer are anisotropically etched to form a cross-sectional L-shaped silicon nitride layer and a first spacer at the sidewall of the gate electrode region. After the first spacer is removed, an ion implantation is performed to form an extended lightly doped region below the L-shaped silicon nitride layer in the substrate and a lightly doped region in the substrate surrounding the extended lightly doped region. A second spacer is formed at the sidewall of the L-shaped silicon nitride layer wherein the second spacer covers the L-shaped silicon nitride layer. An ion implantation process is performed to form source/drain regions, using the second spacer and the gate electrode region as masks. The L-shaped silicon nitride layer is removed to form an L-shaped air-gap region.

Abstract translation: 制造金属氧化物半导体器件的气隙间隔物的方法包括以下步骤。 首先，提供依次形成有栅氧化层和多晶硅层的基板。 图案化多晶硅层和栅极氧化物层以形成栅极电极区域。 在衬底的表面和栅电极区域的表面上依次形成氮化硅层和氧化物层。 各向异性蚀刻氧化物层和氮化硅层，以在栅电极区域的侧壁处形成横截面的L形氮化硅层和第一间隔物。 在去除第一间隔物之后，进行离子注入以在衬底中的L形氮化硅层下方形成延伸的轻掺杂区域，以及在包围扩展的轻掺杂区域的衬底中的轻掺杂区域。 第二间隔件形成在L形氮化硅层的侧壁处，其中第二间隔件覆盖L形氮化硅层。 执行离子注入工艺以形成源极/漏极区域，使用第二间隔物和栅极电极区域作为掩模。 去除L形氮化硅层以形成L形气隙区域。

公开(公告)号：US5895254A

公开(公告)日：1999-04-20

申请号：US993500

申请日：1997-12-18

Applicant: Kuo-Tai Huang ,  Tony Lin ,  Water Lur

Inventor： Kuo-Tai Huang ,  Tony Lin ,  Water Lur

IPC: H01L21/762 ,  H01L21/76

CPC classification number: H01L21/76224 ,  Y10S148/05

Abstract: A method for forming a shallow trench isolation structure comprising the steps of sequentially forming a pad oxide layer and a mask layer over a substrate, then patterning the mask layer and the pad oxide layer. Next, an opening is formed in the mask layer, wherein the sidewall of the opening in the mask layer forms a sharp angle with the substrate layer below. Thereafter, the substrate is etched from the opening down to form a trench. In a subsequent step, insulating material is deposited into the trench forming an insulating layer rising to a level higher than the mask layer, and accompanying by the formation of a protuberance at the side of the insulating layer. Subsequently, the mask layer is removed, and then portions of the pad oxide layer is removed to form a spacer on the upper side of the insulating layer. Finally, the pad oxide layer above the substrate is removed to complete the formation of the shallow trench isolation structure. Due to the presence of a spacer, resistance against subsequent etching is increased at the junction between the trench insulating layer and the substrate layer. Thus, kink effect caused by the over-etching of the insulating layer is prevented.

Abstract translation: 一种用于形成浅沟槽隔离结构的方法，包括以下步骤：在衬底上顺序形成焊盘氧化物层和掩模层，然后对掩模层和焊盘氧化物层进行图案化。 接下来，在掩模层中形成开口，其中掩模层中的开口的侧壁与下面的基底层形成锐角。 此后，从开口向下蚀刻衬底以形成沟槽。 在随后的步骤中，将绝缘材料沉积到沟槽中，形成上升到高于掩模层的水平的绝缘层，并伴随着在绝缘层一侧形成突起。 随后，去除掩模层，然后去除焊盘氧化物层的一部分，以在绝缘层的上侧形成间隔物。 最后，去除衬底上方的衬垫氧化物层以完成浅沟槽隔离结构的形成。 由于存在间隔物，在沟槽绝缘层和衬底层之间的结处增加了对后续蚀刻的抵抗力。 因此，防止了由绝缘层的过度蚀刻引起的扭结效应。

公开(公告)号：US5780348A

公开(公告)日：1998-07-14

申请号：US892314

申请日：1997-07-14

Applicant: Tony Lin ,  Water Lur ,  Shih-Wei Sun

Inventor： Tony Lin ,  Water Lur ,  Shih-Wei Sun

IPC: H01L21/336 ,  H01L21/283

CPC classification number: H01L29/6659 ,  H01L29/665

Abstract: A method of making a self-aligned silicide component having parasitic spacers formed on the sides of an upper surface of the component isolating regions, the bottom sides of the spacers and the exposed sides of the gate regions, which increases a distance from a metal silicide layer at a corner of an active region neighboring the component isolating region to the source/drain junction, to prevent undesired current leakages. The formation of parasitic spacers increases a distance from the metal silicide layer lying above the gate surface to the metal silicide layer lying above the source/drain surface so that an ability to withstand electrostatic damages is enhanced.

Abstract translation: 一种制造具有寄生间隔物的自对准硅化物组分的方法，其形成在部件隔离区域的上表面的侧面上，间隔物的底侧和栅极区域的暴露侧，其增加了距金属硅化物的距离 在与源极/漏极结的部件隔离区域相邻的有源区域的拐角处的层，以防止不期望的电流泄漏。 寄生间隔物的形成增加了位于栅极表面上方的金属硅化物层到位于源极/漏极表面上方的金属硅化物层的距离，从而增强了承受静电损伤的能力。

公开(公告)号：US08419845B2

公开(公告)日：2013-04-16

申请号：US13194734

申请日：2011-07-29

Applicant: Tony Lin

Inventor： Tony Lin

IPC: B01D46/00

CPC classification number: B01D46/12 ,  B01D46/0023 ,  B01D2273/30 ,  F24F2001/0096

Abstract: The present invention provides an air filter including a main body, a pressure fan, a filter mode and a fixing assembly. The main body has a containing room, an entrance hole and an exit hole. The pressure fan is disposed in the containing room. The filter mode includes a first filter layer, a second filter layer and a frame body. The first filter layer is disposed in the entrance hole, and the second filter layer is disposed in the frame body. As such, users can select to use only the first filter layer or both filter layers at one time. Moreover, users only need to let the frame body pivot to a position away from the entrance hole so that users can change the filter layers faster and easier.

Abstract translation: 本发明提供一种空气过滤器，包括主体，压力风扇，过滤器模式和定影组件。 主体有收容室，入口孔和出口孔。 压力风扇设置在容纳室内。 滤波器模式包括第一滤波器层，第二滤波器层和框架体。 第一过滤层设置在入口孔中，第二过滤层设置在框体内。 因此，用户可以一次选择仅使用第一过滤层或两个过滤层。 而且，用户只需要让框架体转动到远离入口孔的位置，以便用户可以更快，更容易地更换过滤器层。

公开(公告)号：US08322766B1

公开(公告)日：2012-12-04

申请号：US13287736

申请日：2011-11-02

Applicant: William Hsiung ,  Shih-Chun Lo ,  Tony Lin

Inventor： William Hsiung ,  Shih-Chun Lo ,  Tony Lin

IPC: B25J15/08

CPC classification number: H01L21/68707 ,  B25J11/0095 ,  B25J15/0475

Abstract: A gripper applied in a transport mechanism for transporting a wafer is provided. The transport mechanism includes a bar. The gripper includes a fixing member fixed to the bar, and a carrying member. The fixing member includes two grooves adjacent to the bottom of the fixing member. Each groove includes an entrance and a retaining portion. The carrying member includes a notch and a first claw. The notch is located at the top of the carrying member and communicates two opposite sides of the carrying member. The notch includes two inner walls, each having a protrusion. The carrying member is assembled to the fixing member by sliding each protrusion along one of the grooves from the corresponding entrance and until abutting against the corresponding retaining portion. The first claw is located at a first sidewall of the carrying member. The edge of the wafer is supportable by the first claw.

Abstract translation: 提供了应用于输送晶片的输送机构中的夹持器。 运输机构包括一个酒吧。 夹持器包括固定到杆的固定构件和承载构件。 固定构件包括与固定构件的底部相邻的两个凹槽。 每个凹槽包括入口和保持部分。 承载构件包括凹口和第一爪。 凹口位于承载构件的顶部并且连通承载构件的两个相对的两侧。 凹口包括两个内壁，每个具有突出部。 通过沿着相应的入口沿着一个凹槽滑动每个突起并且直到抵靠相应的保持部分而将承载构件组装到固定构件。 第一爪位于承载构件的第一侧壁处。 晶片的边缘可由第一爪支撑。

公开(公告)号：US20120103159A1

公开(公告)日：2012-05-03

申请号：US12914553

申请日：2010-10-28

Applicant: Tony LIN

Inventor： Tony LIN

IPC: B26D5/12 ,  B26D7/24

CPC classification number: B26D7/24 ,  B26D5/12 ,  Y10T83/8831 ,  Y10T83/8858

Abstract: A cutting apparatus of the present invention mainly includes a cylinder, a cutting assembly and a valve assembly. The valve assembly is connected to the cylinder so as to control action of the cylinder. The cutting assembly is connected to the cylinder, so that the cutting assembly can be driven to cutting plates or boards. The valve assembly has a first switch and a second switch. When both of the first switch and the second switch are turned on, the cutting assembly is driven to move for cutting. When one of the first switch and the second switch is turned off, the cutting assembly is driven to return its initial position.As such, the first switch is provided for ordinary operation. The second switch is taken as an emergency switch for particular situation so as to avoid accident.

Abstract translation: 本发明的切割装置主要包括圆筒，切割组件和阀组件。 阀组件连接到气缸，以控制气缸的动作。 切割组件连接到气缸，使得切割组件可以被驱动到切割板或板。 阀组件具有第一开关和第二开关。 当第一开关和第二开关都被接通时，切割组件被驱动以移动以进行切割。 当第一开关和第二开关之一关闭时，切割组件被驱动以返回其初始位置。 这样，第一开关被提供用于普通操作。 第二个开关作为特殊情况的紧急开关，以避免事故。

公开(公告)号：US20120085074A1

公开(公告)日：2012-04-12

申请号：US12902867

申请日：2010-10-12

Applicant: Tony LIN

Inventor： Tony LIN

IPC: B01D46/42

CPC classification number: B01D46/42 ,  B01D46/0016

Abstract: A foldable dust collector of the present invention includes a supporting portion, a case and an air pump. The supporting portion is foldable. The case is disposed on the supporting portion. The case is pivotable with respect to the supporting portion. The air pump is disposed on the case. The air pump is used for drawing air into the case.Therefore, the foldable dust collector of the present invention can be transformed. A width of the foldable dust collector is changeable. As such, the foldable dust collector is easier to be stored or be transported. Moreover, the foldable dust collector can be used in a small space.

Abstract translation: 本发明的可折叠集尘器包括支撑部分，壳体和空气泵。 支撑部分是可折叠的。 壳体设置在支撑部分上。 壳体相对于支撑部分可枢转。 气泵设置在壳体上。 气泵用于将空气吸入外壳。 因此，可以改变本发明的可折叠集尘器。 可折叠集尘器的宽度是可变的。 因此，可折叠的集尘器更容易被储存或运输。 此外，可折叠式集尘器可以在很小的空间中使用。

公开(公告)号：USD652186S1

公开(公告)日：2012-01-10

申请号：US29369918

申请日：2010-09-15

Applicant: Tony Lin

Designer： Tony Lin

公开(公告)号：US20110175413A1

公开(公告)日：2011-07-21

申请号：US12689731

申请日：2010-01-19

Applicant: Tony Lin

Inventor： Tony Lin

IPC: A47C3/03

CPC classification number: A47C3/03

Abstract: A locking mechanism for a glider rocker having a gliding chair seat mounted on a stationary base, including an operating assembly mounted on the gliding chair seat, a pair of bearing brackets mounted on the stationary base respectively, and a pair of mounting assemblies. Each mounting assembly includes a prop, a strut, a curved elongated member, a mounting bracket, and a restoring spring connected with the curved elongated member and the prop.

Abstract translation: 一种用于滑翔机摇杆的锁定机构，其具有安装在固定基座上的滑翔椅座椅，其包括安装在滑动椅座上的操作组件，分别安装在固定基座上的一对轴承座和一对安装组件。 每个安装组件包括支柱，支柱，弯曲的细长构件，安装支架和与弯曲的细长构件和支柱连接的复原弹簧。