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    CABLE COUPLING CONNECTOR
    41.
    发明申请
    CABLE COUPLING CONNECTOR 失效
    电缆耦合连接器

    公开(公告)号：US20120309230A1

    公开(公告)日：2012-12-06

    申请号：US13520684

    申请日：2010-12-28

    Applicant: Yosuke Watanabe ,  Yuichi Sasaki ,  Chiharu Miyazaki ,  Naoto Oka ,  Koichiro Misu

    Inventor： Yosuke Watanabe ,  Yuichi Sasaki ,  Chiharu Miyazaki ,  Naoto Oka ,  Koichiro Misu

    IPC: H01R13/66

    CPC classification number: H01R31/06 ,  H01R13/501 ,  H01R13/502 ,  H01R13/6625 ,  H01R13/6633 ,  H01R13/7197 ,  H01R24/44

    Abstract: A cable coupler including an external cylinder mechanism having an inner conductor for electrically connecting the inner conductor itself to the outer conductors of the shielded cables, an outer conductor having a larger diameter than the inner conductor, a gap portion disposed between the inner conductor and the outer conductor, and capacitors arranged in the gap portion, for electrically connecting between the outer conductor and the inner conductor, an inner potion of the external cylinder mechanism being able to be opened and closed along a longitudinal direction, an internal coupling mechanism placed inside the inner conductor and having connecting pins for holding the core wires of the shielded cables, for electrically connecting between the core wires of the shielded cables, and a base for holding the external cylinder mechanism and for electrically connecting the external cylinder mechanism to an external conductor.

    Abstract translation: 一种电缆耦合器，包括具有内部导体的外部气缸机构，所述内部导体用于将内部导体本身与屏蔽电缆的外部导体电连接，具有比内部导体更大的直径的外部导体，设置在内部导体和 外导体和电容器，其设置在间隙部分中，用于电连接外导体和内导体，外筒体机构的内部部分能够沿纵向方向打开和关闭，内部联接机构设置在内部导体 内部导体，并且具有用于保持屏蔽电缆的芯线的连接销，用于电连接屏蔽电缆的芯线和用于保持外部气缸机构的基座和用于将外部气缸机构电连接到外部导体。

    Process for producing hexahydrofurofuranol derivative
    42.
    发明授权
    Process for producing hexahydrofurofuranol derivative 有权
    六氢呋喃醇衍生物的制备方法

    公开(公告)号：US07951977B2

    公开(公告)日：2011-05-31

    申请号：US11920774

    申请日：2006-06-05

    Applicant: Tetsuya Ikemoto ,  Yosuke Watanabe

    Inventor： Tetsuya Ikemoto ,  Yosuke Watanabe

    IPC: C07C47/00 ,  C07C31/18 ,  C07D493/04

    CPC classification number: C07B53/00 ,  C07C45/30 ,  C07C45/72 ,  C07C47/198 ,  C07D493/04 ,  Y02P20/55 ,  C07C47/277

    Abstract: The present invention provides; a process for producing a compound (IV) comprising a step of reacting a compound (I) with a compound (II) in the presence of an optionally substituted cyclic secondary amine to obtain a compound (III) and a step of sequentially or simultaneously eliminating R1 and R2 from the compound (III), and then cyclizing the R1- and R2-eliminated compound to obtain the compound represented by the formula (IV); a process for producing a high purity compound (IV); an intermediate thereof; and a process for producing an intermediate.

    Abstract translation: 本发明提供： 一种制备化合物（Ⅳ）的方法，包括在任意取代的环状仲胺存在下，使化合物（Ⅰ）与化合物（Ⅱ）反应得到化合物（Ⅲ）和顺序或同时除去的步骤 R1和R2，然后使R 1和R 2消去的化合物环化，得到由式（IV）表示的化合物; 一种生产高纯度化合物（Ⅳ）的方法; 其中间体; 和中间体的制造方法。

    Hydroxy-protecting reagent and method of protecting hydroxy with the same
    44.
    发明授权
    Hydroxy-protecting reagent and method of protecting hydroxy with the same 失效
    羟基保护试剂和保护羟基的方法

    公开(公告)号：US07605286B2

    公开(公告)日：2009-10-20

    申请号：US10567150

    申请日：2004-06-23

    Applicant: Tetsuya Ikemoto ,  Yosuke Watanabe

    Inventor： Tetsuya Ikemoto ,  Yosuke Watanabe

    IPC: C07C69/66 ,  C07C43/20

    CPC classification number: C07B41/04 ,  C07D307/32 ,  Y02P20/55

    Abstract: The present invention relates to a method of protecting a hydroxyl group, which includes reacting a hydroxyl group-containing compound with a compound represented by the formula (I): wherein R is a phenyl group optionally having substituent(s), an alkyl group optionally having substituent(s) or a benzyl group optionally having substituent(s), and X is a halogen atom, in the presence of an acid catalyst to substitute the hydrogen atom of the hydroxyl group of the hydroxyl group-containing compound with a protecting group represented by the formula (II): wherein R is as defined above. The present invention provides a method capable of introducing an acetal type protecting group into a hydroxyl group under mild conditions, and a protecting reagent therefor and a method of producing the protecting reagent.

    Abstract translation: 本发明涉及保护羟基的方法，其包括使含羟基的化合物与式（I）表示的化合物反应：其中R是任选具有取代基的苯基，任选地具有取代基的烷基 具有取代基或任选具有取代基的苄基，X是卤素原子，在酸催化剂存在下，用保护基取代含羟基化合物的羟基的氢原子 由式（II）表示：其中R如上所定义。 本发明提供能够在温和条件下将缩醛型保护基引入羟基的方法及其保护试剂，以及制备保护试剂的方法。

    Wafer laser processing method
    45.
    发明授权
    Wafer laser processing method 有权
    晶圆激光加工方法

    公开(公告)号：US07544590B2

    公开(公告)日：2009-06-09

    申请号：US11892914

    申请日：2007-08-28

    Applicant: Yosuke Watanabe

    Inventor： Yosuke Watanabe

    IPC: H01L21/268

    CPC classification number: H01L21/78 ,  B23K26/0853 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/50

    Abstract: A method of carrying out laser processing on a wafer having a plurality of parallel streets on the front surface along the streets, comprising the steps of: carrying out a first laser processing step of carrying out laser processing along streets formed in one half area of the wafer by carrying out a laser beam application step for applying a laser beam along the streets by positioning the outermost street on one side in the indexing-feed direction of the wafer right below a condenser and an indexing-feed step for positioning a street adjacent to the street which has undergone the laser beam application step on the wafer right below the condenser sequentially; and carrying out a second laser processing step of carrying out laser processing along streets formed in the other half area of the wafer by carrying out a laser beam application step for applying a laser beam along the streets by positioning the outermost street on the other side in the indexing-feed direction of the wafer which has undergone the first laser processing step right below the condenser and an indexing-feed step for positioning a street adjacent to the street which has undergone the laser beam application step on the wafer right below the condenser sequentially.

    Abstract translation: 一种在沿着街道的前表面上具有多个平行街道的晶片上执行激光加工的方法，包括以下步骤：执行第一激光加工步骤，沿着形成在 晶片，其通过执行激光束施加步骤，用于沿着街道施加激光束，将最外面的街道定位在晶片正下方的冷凝器的分度馈送方向的一侧和用于定位邻近的街道的分度馈送步骤 在冷凝器的正下方顺序地在晶片上经过激光束施加步骤的街道; 并执行第二激光处理步骤，通过执行激光束施加步骤，沿着形成在晶片的另一半区域中的街道进行激光处理，用于通过将最外面的街道定位在另一侧上来沿着街道施加激光束 在冷凝器正下方经历了第一激光加工步骤的晶片的分度馈送方向和用于将经过激光束施加步骤的街道相邻的街道定位在冷凝器正下方的晶片上的分度馈送步骤 。

    Method of forming embrittled areas inside wafer for division
    47.
    发明申请
    Method of forming embrittled areas inside wafer for division 有权
    在晶片内部形成脆化区域的划分方法

    公开(公告)号：US20080023456A1

    公开(公告)日：2008-01-31

    申请号：US11878449

    申请日：2007-07-24

    Applicant: Yosuke Watanabe

    Inventor： Yosuke Watanabe

    IPC: B23K26/08

    CPC classification number: H01L21/78 ,  B23K26/38 ,  H01L21/67092

    Abstract: A method of forming embrittled areas in multiple layers inside a wafer so as to enable the wafer to be divided correctly even at areas where embrittled areas intersect. In a first direction embrittling step an embrittled area is formed as a bottom layer, in a second direction embrittling step embrittled areas are formed as a bottom layer and a second layer, in the first direction embrittling step the embrittled areas are formed as a second layer and a third layer, and thereafter, the second direction embrittling step and the first direction embrittling step are alternately implemented, and finally, in the second direction embrittling step, embrittled area is formed as a top layer, so that a length of an unprocessed area is contained within a range that does not interfere with division.

    Abstract translation: 一种在晶片内形成多层脆化区域的方法，以便即使在脆化区域相交的区域也能够正确地分割晶片。 在第一方向脆化步骤中，脆化区域形成为底层，在第二方向脆化步骤中，脆化区域形成为底层和第二层，在第一方向脆化步骤中，脆化区域形成为第二层 和第三层，然后交替地实施第二方向脆化步骤和第一方向脆化步骤，最后，在第二方向脆化步骤中，形成脆化区域作为顶层，使得未加工区域的长度 包含在不干扰分裂的范围内。

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