公开(公告)号：US10915689B2

公开(公告)日：2021-02-09

申请号：US15769338

申请日：2016-09-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Peter Ten Berge ,  Everhardus Cornelis Mos ,  Richard Johannes Franciscus Van Haren ,  Peter Hanzen Wardenier ,  Erik Jensen ,  Bernardo Kastrup ,  Michael Kubis ,  Johannes Catharinus Hubertus Mulkens ,  David Frans Simon Deckers ,  Wolfgang Helmut Henke ,  Joungchel Lee

IPC: G06F17/50 ,  G03F1/00 ,  G06F30/398 ,  G03F7/20 ,  G03F1/72 ,  G06F119/22 ,  G06F119/18 ,  G03B27/68

Abstract: A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.

公开(公告)号：US20200057395A1

公开(公告)日：2020-02-20

申请号：US16665022

申请日：2019-10-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Jasper MENGER ,  Paul Cornelis Hubertus Aben ,  Everhardus Cornelis Mos

IPC: G03F9/00

Abstract: Offline metrology measurements are performed on substrates that have been subjected to lithographic processing. Model parameters are calculated by fitting the measurements to an extended high-order substrate model defined using a combination of basis functions that include an edge basis function related to a substrate edge. A radial edge basis function may be expressed in terms of distance from a substrate edge. The edge basis function may, for example, be an exponential decay function or a rational function. Lithographic processing of a subsequent substrate is controlled using the calculated high-order substrate model parameters, in combination with low-order substrate model parameters obtained by fitting inline measurements to a low order model.