公开(公告)号：US10281825B2

公开(公告)日：2019-05-07

申请号：US16084586

申请日：2017-05-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Michiel Kupers ,  Wolfgang Helmut Henke

IPC: G03B27/68 ,  G03F7/20

Abstract: A lithographic apparatus applies patterns to substrates, the substrates being processed as a plurality of lots. Each lot of substrates receives a particular layer pattern under layer-specific operating conditions. A thermal model is provided for modeling and compensating one or more characteristics of thermal behavior of components within the lithographic apparatus, in response to the varying layer-specific operating conditions associated with a sequence of lots. The thermal model is also used to simulate thermal behavior of the apparatus when processing a given collection of lots in different possible sequences. Based on comparison of the simulated thermal behavior in different sequences of lots, an optimized sequence is determined. Optionally, lot sequencing rules are determined and used to obtain a preferred thermal behavior when processing a collection of lots in the future.

公开(公告)号：US11709434B2

公开(公告)日：2023-07-25

申请号：US17633781

申请日：2020-07-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Rizvi Rahman ,  Cornelis Johannes Henricus Lambregts ,  Wolfgang Helmut Henke

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70633 ,  G03F7/70641

Abstract: A device manufacturing method including: performing a first exposure on a substrate using a first lithographic apparatus to form a first patterned layer including first features; processing the substrate to transfer the first features into the substrate; and performing a second exposure on the substrate using a second lithographic apparatus to form a second patterned layer including second features, wherein: the first lithographic apparatus has first and second control inputs effective to control first and second parameters of the first features at least partly independently; the second lithographic apparatus has a third control input effective to control the first and second parameters of the second features together; and the first exposure is performed with the first and/or second control input set to pre-bias the first and/or second parameter.

公开(公告)号：US11150565B2

公开(公告)日：2021-10-19

申请号：US15748643

申请日：2016-08-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Rene Marinus Gerardus Johan Queens ,  Wolfgang Helmut Henke

IPC: G03F7/20 ,  G03F9/00

Abstract: A lithographic apparatus is used to manufacture a plurality of devices on a substrate. A height map is obtained representing a topographical variation across the substrate. Using the height map the apparatus controls imaging of a field pattern at multiple field locations across the substrate. The field pattern includes a plurality of individual device areas. For field locations near the substrate's edge, the height map data is used selectively so as to ignore topographical variations in one or more individual device areas. Whether a device area is to be ignored is determined at least partly based on the height map data obtained for the current exposure. Alternatively or in addition, the selection can be based on measurements made at the corresponding device area and field location on one or more prior substrates, and/or on the same substrate in a previous layer.

公开(公告)号：US11249404B2

公开(公告)日：2022-02-15

申请号：US16619821

申请日：2018-05-18

Applicant: ASML Netherlands B.V.

Inventor： Emil Peter Schmitt-Weaver ,  Kaustuve Bhattacharyya ,  Rene Marinus Gerardus Johan Queens ,  Wolfgang Helmut Henke ,  Wim Tjibbo Tel ,  Theodorus Franciscus Adrianus Maria Linschoten

IPC: G03F9/00

Abstract: A system comprises a topography measurement system configured to determine a respective height for each of a plurality of locations on a substrate; and a processor configured to: determine a height map for the substrate based on the determined heights for the plurality of locations; and determine at least one alignment parameter for the substrate by comparing the height map and a reference height map, wherein the reference height map comprises or represents heights for a plurality of locations on a reference substrate portion.

公开(公告)号：US10915689B2

公开(公告)日：2021-02-09

申请号：US15769338

申请日：2016-09-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Peter Ten Berge ,  Everhardus Cornelis Mos ,  Richard Johannes Franciscus Van Haren ,  Peter Hanzen Wardenier ,  Erik Jensen ,  Bernardo Kastrup ,  Michael Kubis ,  Johannes Catharinus Hubertus Mulkens ,  David Frans Simon Deckers ,  Wolfgang Helmut Henke ,  Joungchel Lee

IPC: G06F17/50 ,  G03F1/00 ,  G06F30/398 ,  G03F7/20 ,  G03F1/72 ,  G06F119/22 ,  G06F119/18 ,  G03B27/68

Abstract: A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.