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公开(公告)号：US09291916B2
公开(公告)日：2016-03-22
申请号：US14613687
申请日：2015-02-04
发明人： Stefan Cornelis Theodorus Van Der Sanden , Richard Johannes Franciscus Van Haren , Hubertus Johannes Gertrudus Simons , Remi Daniel Marie Edart , Xiuhong Wei , Irina Lyulina , Michael Kubis
CPC分类号： G03F7/70616 , G03F7/70141 , G03F7/70633 , G03F9/7003 , G03F9/7088
摘要： A substrate is loaded onto a substrate support of a lithographic apparatus, after which the apparatus measures locations of substrate alignment marks. These measurements define first correction information allowing the apparatus to apply a pattern at one or more desired locations on the substrate. Additional second correction information is used to enhance accuracy of pattern positioning, in particular to correct higher order distortions of a nominal alignment grid. The second correction information may be based on measurements of locations of alignment marks made when applying a previous pattern to the same substrate. The second correction information may alternatively or in addition be based on measurements made on similar substrates that have been patterned prior to the current substrate.
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公开(公告)号：US11170072B2
公开(公告)日：2021-11-09
申请号：US15558186
申请日：2016-03-25
发明人： Everhardus Cornelis Mos , Velislava Ignatova , Erik Jensen , Michael Kubis , Hubertus Johannes Gertrudus Simons , Peter Ten Berge , Erik Johannes Maria Wallerbos , Jochem Sebastiaan Wildenberg
摘要： A method including evaluating, with respect to a parameter representing remaining uncertainty of a mathematical model fitting measured data, one or more mathematical models for fitting measured data and one or more measurement sampling schemes for measuring data, against measurement data across a substrate, and identifying one or more mathematical models and/or one or more measurement sampling schemes, for which the parameter crosses a threshold.
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公开(公告)号：US10996570B2
公开(公告)日：2021-05-04
申请号：US16594613
申请日：2019-10-07
发明人： Zili Zhou , Nitesh Pandey , Olger Victor Zwier , Patrick Warnaar , Maurits Van Der Schaar , Elliott Gerard McNamara , Arie Jeffrey Den Boef , Paul Christiaan Hinnen , Murat Bozkurt , Joost Jeroen Ottens , Kaustuve Bhattacharyya , Michael Kubis
IPC分类号： G03F7/20 , G01N21/47 , G01N21/95 , G01N21/956 , G03F9/00
摘要： A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shift (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.
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公开(公告)号：US10386176B2
公开(公告)日：2019-08-20
申请号：US14835504
申请日：2015-08-25
发明人： Kaustuve Bhattacharyya , Henricus Wilhelmus Maria Van Buel , Christophe David Fouquet , Hendrik Jan Hidde Smilde , Maurits Van Der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Johannes Marcus Maria Beltman , Andreas Fuchs , Omer Abubaker Omer Adam , Michael Kubis , Martin Jacobus Johan Jak
摘要： A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
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5.发明授权公开(公告)号：US09946167B2
公开(公告)日：2018-04-17
申请号：US14824696
申请日：2015-08-12
发明人： Hendrik Jan Hidde Smilde , Arno Jan Bleeker , Willem Marie Julia Marcel Coene , Patrick Warnaar , Michael Kubis
CPC分类号： G03F7/70633 , G03F7/70483 , G03F7/70625 , G03F7/70641 , G06N99/005
摘要： Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The optical system has a first branch leading to a pupil plane imaging sensor and a second branch leading to a substrate plane imaging sensor. A spatial light modulator is arranged in an intermediate pupil plane of the second branch of the optical system. The SLM imparts a programmable pattern of attenuation that may be used to correct for asymmetries between the first and second modes of illumination or imaging. By use of specific target designs and machine-learning processes, the attenuation patterns may also be programmed to act as filter functions, enhancing sensitivity to specific parameters of interest, such as focus.
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公开(公告)号：US20160061589A1
公开(公告)日：2016-03-03
申请号：US14835504
申请日：2015-08-25
发明人： Kaustuve BHATTACHARYYA , Henricus Wilhelmus Maria Van Buel , Christophe David Fouquet , Hendrik Jan Hidde Smilde , Maurits Van Der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Johannes Marcus Maria Beltman , Andreas Fuchs , Omer Abubaker Omer Adam , Michael Kubis , Martin Jacobus Johan Jak
IPC分类号： G01B11/14
CPC分类号： G01B11/14 , G03F7/70633 , G03F7/70683
摘要： A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
摘要翻译： 具有至少第一子目标和至少第二子目标的衍射测量目标，并且其中（1）所述第一和第二子目标各自包括一对周期性结构，并且所述第一子目标具有不同的 设计比第二子目标，不同的设计包括具有与第二子目标周期结构不同的间距，特征宽度，空间宽度和/或分割的第一子目标周期性结构，或（2）第一和第二子目标周期结构 子目标分别包括第一层中的第一和第二周期性结构，并且第三周期性结构至少部分地位于第一层下面的第二层中的第一周期性结构下方，并且在第二层周期结构之下不存在周期性结构 并且第四周期性结构至少部分地位于第二层下面的第三层中的第二周期性结构下方。
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公开(公告)号：US11385553B2
公开(公告)日：2022-07-12
申请号：US17306670
申请日：2021-05-03
发明人： Zili Zhou , Nitesh Pandey , Olger Victor Zwier , Patrick Warnaar , Maurits Van Der Schaar , Elliott Gerard McNamara , Arie Jeffrey Den Boef , Paul Christiaan Hinnen , Murat Bozkurt , Joost Jeroen Ottens , Kaustuve Bhattacharyya , Michael Kubis
IPC分类号： G03F7/20 , G01N21/47 , G01N21/95 , G01N21/956 , G03F9/00
摘要： A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shift (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.
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公开(公告)号：US11048174B2
公开(公告)日：2021-06-29
申请号：US16076231
申请日：2017-02-16
发明人： Michael Kubis , Marinus Jochemsen , Richard Stephen Wise , Nader Shamma , Girish Anant Dixit , Liesbeth Reijnen , Ekaterina Mikhailovna Viatkina , Melisa Luca , Johannes Catharinus Hubertus Mulkens
摘要： A method, and associated apparatus and computer program, to determine corrections for a parameter of interest, such as critical dimension, of a patterning process. The method includes determining an exposure control correction for an exposure control parameter and, optionally, determining a process control correction for a process control parameter, based upon a measurement of the parameter of interest of a structure, and an exposure control relationship and a process control relationship. The exposure control relationship describes the dependence of the parameter of interest on the exposure control parameter and the process control relationship describes the dependence of the parameter of interest on the process control parameter. The exposure control correction and process control correction may be co-optimized to minimize variation of the parameter of interest of subsequent exposed and processed structures relative to a target parameter of interest.
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9.发明授权公开(公告)号：US09163935B2
公开(公告)日：2015-10-20
申请号：US13687569
申请日：2012-11-28
CPC分类号： G01B11/24 , G01B11/14 , G03F7/70633 , G03F9/7003 , G03F9/7049 , G03F9/7088 , G03F9/7092
摘要： Disclosed is a device manufacturing method, and accompanying inspection and lithographic apparatuses. The method comprises measuring on the substrate a property such as asymmetry of a first overlay marker and measuring on the substrate a property such as asymmetry of an alignment marker. In both cases the asymmetry is determined. The position of the alignment marker on the substrate is then determined using an alignment system and the asymmetry information of the alignment marker and the substrate aligned using this measured position. A second overlay marker is then printed on the substrate; and a lateral overlay measured on the substrate of the second overlay marker with respect to the first overlay marker using the determined asymmetry information of the first overlay marker.
摘要翻译： 公开了一种器件制造方法，以及伴随的检查和光刻设备。 该方法包括在衬底上测量诸如第一覆盖标记的不对称性和在衬底上测量诸如对准标记的不对称性的特性。 在这两种情况下，确定不对称性。 然后使用对准系统确定对准标记在衬底上的位置，并使用该测量位置对准对准标记和衬底的不对称信息。 然后将第二覆盖标记印刷在基底上; 以及使用所确定的所述第一覆盖标记的不对称信息相对于所述第一覆盖标记在所述第二覆盖标记的基板上测量的横向覆盖。
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公开(公告)号：US09158194B2
公开(公告)日：2015-10-13
申请号：US13628697
申请日：2012-09-27
发明人： Armand Eugene Albert Koolen , Henricus Petrus Maria Pellemans , Maurits Van Der Schaar , Peter Clement Paul Vanoppen , Michael Kubis
IPC分类号： G01B11/00 , G01B11/14 , G03B27/32 , G03B27/54 , G03B27/72 , G03B27/74 , G03C5/00 , G03F1/42 , G03F7/20 , G03F9/00 , G01N21/47 , G01B9/04
CPC分类号： G03F1/42 , G01B9/04 , G01N21/47 , G03F7/70616 , G03F7/70633 , G03F9/70 , G03F9/7069 , G03F9/7088
摘要： An approach is used to estimate and correct the overlay variation as function of offset for each measurement. A target formed on a substrate includes periodic gratings. The substrate is illuminated with a circular spot on the substrate with a size larger than each grating. Radiation scattered by each grating is detected in a dark-field scatterometer to obtain measurement signals. The measurement signals are used to calculate overlay. The dependence (slope) of the overlay as a function of position in the illumination spot is determined. An estimated value of the overlay at a nominal position such as the illumination spot's center can be calculated, correcting for variation in the overlay as a function of the target's position in the illumination spot. This compensates for the effect of the position error in the wafer stage movement, and the resulting non-centered position of the target in the illumination spot.
摘要翻译： 一种方法用于估计和校正覆盖变化作为每个测量的偏移函数。 形成在衬底上的靶包括周期性光栅。 在衬底上用圆形点照射衬底，其尺寸大于每个光栅。 在暗场散射仪中检测由每个光栅散射的辐射，以获得测量信号。 测量信号用于计算叠加。 确定覆盖层与照明点中位置的函数关系（斜率）。 可以计算在诸如照明点中心的标称位置处的覆盖物的估计值，以根据目标在照明点中的位置的函数来校正覆盖物的变化。 这补偿了晶片台移动中的位置误差的影响，以及目标在照明点中产生的非居中位置。
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