Method of measuring a target, metrology apparatus, lithographic cell, and target

    公开(公告)号:US10955756B2

    公开(公告)日:2021-03-23

    申请号:US15970858

    申请日:2018-05-03

    Abstract: Methods and apparatuses for measuring a target formed on a substrate. The target includes an alignment structure and a metrology structure. In one method, a first measurement process is performed that includes illuminating the target with first radiation and detecting radiation resulting from scattering of the first radiation from the target. A second measurement process includes illuminating the target with second radiation and detecting radiation resulting from scattering of the second radiation from the target. The first measurement process detects a position of the alignment structure. The second measurement process uses the position of the alignment structure detected by the first measurement process to align a radiation spot of the second radiation onto a desired location within the metrology structure.

    Metrology method and apparatus with increased bandwidth

    公开(公告)号:US10732514B2

    公开(公告)日:2020-08-04

    申请号:US16264755

    申请日:2019-02-01

    Abstract: Disclosed is method of optimizing bandwidth of measurement illumination for a measurement application, and an associated metrology apparatus. The method comprises performing a reference measurement with reference measurement illumination having a reference bandwidth and performing one or more optimization measurements, each of said one or more optimization measurements being performed with measurement illumination having a varied candidate bandwidth. The one or more optimization measurements are compared with the reference measurement; and an optimal bandwidth for the measurement application is selected based on the comparison.

    Method of determining critical-dimension-related properties, inspection apparatus and device manufacturing method

    公开(公告)号:US10180628B2

    公开(公告)日:2019-01-15

    申请号:US14892176

    申请日:2014-05-23

    Abstract: A method of determining a critical-dimension-related property, such as critical dimension (CD) or exposure dose, includes illuminating each of a plurality of periodic targets having different respective critical dimension biases, measuring intensity of radiation scattered by the targets, recognizing and extracting each grating from the image, determining a differential signal, and determining the CD-related property based on the differential signal, the CD biases and knowledge that the differential signal approximates to zero at a 1:1 line-to-space ratio of such periodic targets. Use of the determined CD-related property to control a lithography apparatus in lithographic processing of subsequent substrates. In order to use just two CD biases, a calibration may use measurements on a “golden wafer” (i.e. a reference substrate) to determine the intensity gradient for each of the CD pairs, with known CDs. Alternatively, the calibration can be based upon simulation of the sensitivity of intensity gradient to CD.

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