公开(公告)号：US20190033727A1

公开(公告)日：2019-01-31

申请号：US16026507

申请日：2018-07-03

Applicant: ASML Netherlands B.V.

Inventor： Marc Johannes NOOT ,  Simon Gijsbert Josephus MATHIJSSEN ,  Kaustuve BHATTACHARYYA ,  Jinmoo BYUN ,  Hyun-Su KIM ,  Won-Jae JANG ,  Timothy Dugan DAVIS

IPC: G03F7/20

Abstract: Disclosed are a method, computer program and a metrology apparatus for measuring a process effect parameter relating to a manufacturing process for manufacturing integrated circuits on a substrate. The method comprises determining for a structure, a first quality metric value for a quality metric from a plurality of measurement values each relating to a different measurement condition while cancelling or mitigating for the effect of the process effect parameter on the plurality of measurement values and a second quality metric value for the quality metric from at least one measurement value relating to at least one measurement condition without cancelling or mitigating for the effect of the process effect parameter on the at least one measurement value. The process effect parameter value for the process effect parameter can then be calculated from the first quality metric value and the second quality metric value, for example by calculating their difference.

公开(公告)号：US20190025707A1

公开(公告)日：2019-01-24

申请号：US16127296

申请日：2018-09-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Arie Jeffrey DEN BOEF ,  Kaustuve BHATTACHARYYA

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/956

CPC classification number: G03F7/70133 ,  G01N21/4788 ,  G01N21/956 ,  G03F7/70625 ,  G03F7/70633

Abstract: A method including: obtaining a measurement of a metrology target on a substrate processed using a patterning process, the measurement having been obtained using measurement radiation; and deriving a parameter of interest of the patterning process from the measurement, wherein the parameter of interest is corrected by a stack difference parameter, the stack difference parameter representing an un-designed difference in physical configuration between adjacent periodic structures of the target or between the metrology target and another adjacent target on the substrate.

公开(公告)号：US20180173112A1

公开(公告)日：2018-06-21

申请号：US15839285

申请日：2017-12-12

Applicant: ASML Netherlands B.V.

Inventor： Martin Jacobus Johan JAK ,  Kaustuve BHATTACHARYYA

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L23/544

Abstract: An overlay metrology target (T) is formed by a lithographic process. A first image (740(0)) of the target structure is obtained using with illuminating radiation having a first angular distribution, the first image being formed using radiation diffracted in a first direction (X) and radiation diffracted in a second direction (Y). A second image (740(R)) of the target structure using illuminating radiation having a second angular illumination distribution which the same as the first angular distribution, but rotated 90 degrees. The first image and the second image can be used together so as to discriminate between radiation diffracted in the first direction and radiation diffracted in the second direction by the same part of the target structure. This discrimination allows overlay and other asymmetry-related properties to be measured independently in X and Y, even in the presence of two-dimensional structures within the same part of the target structure.