APPARATUS AND METHOD OF LASER INTERFERENCE LITHOGRAPHY

    公开(公告)号:US20230408927A1

    公开(公告)日:2023-12-21

    申请号:US18250542

    申请日:2021-11-16

    CPC classification number: G03F7/70408 G03F7/70133

    Abstract: Provided is a method of laser interference lithography, including: performing an interference exposure on a wafer coated with a photoresist; and performing a patterned flood exposure on the interference-exposed wafer, wherein the performing the flood exposure includes: determining a first light field distribution in the interference-exposed wafer; determining a light field distribution of the floodlight source as a second light field distribution based on the first light field distribution, an expected pattern distribution, and parameters of the floodlight source used for the flood exposure; and patterning the light field distribution of the floodlight source based on the second light field distribution, and controlling the floodlight source having the patterned light field distribution to perform the flood exposure on the interference-exposed wafer, so as to form the expected pattern distribution in the flood-exposed wafer.

    Exposure method, exposure apparatus, and device manufacturing method

    公开(公告)号:US09971246B2

    公开(公告)日:2018-05-15

    申请号:US15269030

    申请日:2016-09-19

    Inventor: Yuichi Shibazaki

    Abstract: Within area where of four heads installed on a wafer stage, heads included in the first head group and the second head group to which three heads each belong that include one head different from each other face the corresponding areas on a scale plate, the wafer stage is driven based on positional information which is obtained using the first head group, as well as obtain the displacement (displacement of position, rotation, and scaling) between the first and second reference coordinate systems corresponding to the first and second head groups using the positional information obtained using the first and second head groups. By using the results and correcting measurement results obtained using the second head group, the displacement between the first and second reference coordinate systems is calibrated, which allows the measurement errors that come with the displacement between areas on scale plates where each of the four heads face.

    METHOD FOR OPERATING AN ILLUMINATION SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS

    公开(公告)号:US20180024439A1

    公开(公告)日:2018-01-25

    申请号:US15627816

    申请日:2017-06-20

    Abstract: A method of operating an illumination system of a microlithographic projection exposure apparatus is provided. A set of illumination parameters that describe properties of a light bundle which converges at a point on a mask to be illuminated by the illumination system is first determined. Optical elements whose optical effect on the illumination parameters can be modified as a function of control commands are furthermore determined, as well as sensitivities with which the illumination parameters react to an adjustment of the optical elements, induced by the control commands. The control commands are then determined while taking the previously determined sensitivities into account, such that deviations of the illumination parameters from predetermined target illumination parameters satisfy a predetermined minimisation criterion. These control commands are applied to the optical elements, before the mask is illuminated.

    EXPOSURE METHOD, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD

    公开(公告)号:US20170003601A1

    公开(公告)日:2017-01-05

    申请号:US15269030

    申请日:2016-09-19

    Inventor: Yuichi SHIBAZAKI

    Abstract: Within area where of four heads installed on a wafer stage, heads included in the first head group and the second head group to which three heads each belong that include one head different from each other face the corresponding areas on a scale plate, the wafer stage is driven based on positional information which is obtained using the first head group, as well as obtain the displacement (displacement of position, rotation, and scaling) between the first and second reference coordinate systems corresponding to the first and second head groups using the positional information obtained using the first and second head groups. By using the results and correcting measurement results obtained using the second head group, the displacement between the first and second reference coordinate systems is calibrated, which allows the measurement errors that come with the displacement between areas on scale plates where each of the four heads face.

    Method for operating an illumination system of a microlithographic projection exposure apparatus

    公开(公告)号:US09341957B2

    公开(公告)日:2016-05-17

    申请号:US14948589

    申请日:2015-11-23

    Abstract: A method of operating an illumination system of a microlithographic projection exposure apparatus is provided. A set of illumination parameters that describe properties of a light bundle which converges at a point on a mask to be illuminated by the illumination system is first determined. Optical elements whose optical effect on the illumination parameters can be modified as a function of control commands are furthermore determined, as well as sensitivities with which the illumination parameters react to an adjustment of the optical elements, induced by the control commands. The control commands are then determined while taking the previously determined sensitivities into account, such that deviations of the illumination parameters from predetermined target illumination parameters satisfy a predetermined minimization criterion. These control commands are applied to the optical elements, before the mask is illuminated.

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