公开(公告)号：US20100177863A1

公开(公告)日：2010-07-15

申请号：US12687320

申请日：2010-01-14

申请人： Tomohiko Jimbo ,  Tomonao Takamatsu ,  Hideo Kitamura ,  Rika Hosaka ,  Hitoshi Hattori ,  Harunobu Fukushima ,  Hideo Iwasaki

发明人： Tomohiko Jimbo ,  Tomonao Takamatsu ,  Hideo Kitamura ,  Rika Hosaka ,  Hitoshi Hattori ,  Harunobu Fukushima ,  Hideo Iwasaki

IPC分类号： A61B6/03

CPC分类号： A61B6/4488 ,  A61B6/035 ,  H05G1/02 ,  H05G1/025

摘要： According to an aspect of the present invention, there is provided an X-ray CT scanner including: a gantry; a revolving body provided inside the gantry; an X-ray tube assembly provided in the revolving body; a heat radiator provided inside the revolving body so as to be connected to the X-ray tube assembly; a heat storage material provided in the heat radiator and capable of accumulating a heat generated by the X-ray tube assembly; and an X-ray detector provided inside the revolving body so as to oppose the X-ray tube assembly.

摘要翻译： 根据本发明的一个方面，提供一种X射线CT扫描仪，其包括：台架; 在机架内设置一个旋转体; 设置在旋转体内的X射线管组件; 散热器，设置在所述旋转体内部，以连接到所述X射线管组件; 设置在所述散热器中并且能够积聚由所述X射线管组件产生的热量的蓄热材料; 以及设置在旋转体内部以与X射线管组件相对的X射线检测器。

公开(公告)号：US4992026A

公开(公告)日：1991-02-12

申请号：US370080

申请日：1989-06-22

申请人： Fumio Ohtomo ,  Yasuo Okamoto ,  Shoko Ito ,  Yoshitaka Fukuyama ,  Hideo Iwasaki ,  Takeshi Watanabe

发明人： Fumio Ohtomo ,  Yasuo Okamoto ,  Shoko Ito ,  Yoshitaka Fukuyama ,  Hideo Iwasaki ,  Takeshi Watanabe

IPC分类号： F01D5/18

CPC分类号： F01D5/187 ,  F05D2260/202 ,  F05D2260/2212

摘要： A blade of a gas turbine includes a main body having a dovetail portion and a blade portion extending from the dovetail portion. A cooling air passage for flowing a cooling air is formed in the main body to cool the blade portion. The passage includes a cooling air inlet port open to the dovetail portion and an outlet port open to an extended tip of the blade portion. A first passage portion extends from the inlet port to the portion close to the extended tip along a leading edge of the blade portion. A final passage portion extends from the dovetail portion to the outlet port. The flow sectional area of the final passage portion is gradually decreased from the dovetail portion toward the outlet port. The final passage portion communicates with a number of film cooling holes which are open to the suction side surface of the blade portion.

摘要翻译： 燃气涡轮机的叶片包括具有燕尾部分的主体和从燕尾部分延伸的叶片部分。 在主体中形成用于流动冷却空气的冷却空气通道以冷却叶片部分。 通道包括通向燕尾部分的冷却空气入口和与叶片部分的延伸尖端相通的出口。 第一通道部分沿着叶片部分的前缘从入口延伸到靠近延伸尖端的部分。 最后通道部分从燕尾部分延伸到出口。 最终通道部分的流动截面积从燕尾部分朝向出口逐渐减小。 最后的通道部分与许多对叶片部分的吸力侧表面开口的薄膜冷却孔连通。

公开(公告)号：US4280854A

公开(公告)日：1981-07-28

申请号：US34901

申请日：1979-05-01

申请人： Hiroshi Shibata ,  Hideo Iwasaki ,  Kunio Yamada

发明人： Hiroshi Shibata ,  Hideo Iwasaki ,  Kunio Yamada

IPC分类号： H01L29/73 ,  H01L21/033 ,  H01L21/225 ,  H01L21/265 ,  H01L21/321 ,  H01L21/331 ,  H01L21/768 ,  H01L21/285

CPC分类号： H01L21/2257 ,  H01L21/033 ,  H01L21/321 ,  H01L21/76888 ,  Y10S148/143 ,  Y10S438/92

摘要： A semiconductor device is manufactured by covering a semiconductor substrate of a predetermined conductivity type with a polycrystal layer of a semiconductor material. Selected portions of the polycrystal layer are oxidized into an insulating material during heat treatment. Remaining portions of the polycrystal layer which are left unoxidized act as conductive portions. On manufacturing a bipolar transistor, ion implantation is carried out in a predetermined solid angle to introduce an impurity of an opposite conductivity selectively in a preselected one of the remaining portions. During the heat treatment, the impurity diffuses into the substrate only from the preselected portion to form a PN junction in the substrate. For fabricating an MOS transistor, an oxide film is preliminarily formed on the substrate selectively on an area on which a predetermined one of the remaining polycrystal layer portions is to be formed. Ion implantation is carried out to introduce an impurity of the opposite conductivity in the respective remaining layer portions. The oxide film prevents the impurity from diffusing to the substrate. The impurity diffuses into the substrate only from the respective remaining portions, except the predetermined portion.

摘要翻译： 通过用半导体材料的多晶层覆盖预定导电类型的半导体衬底来制造半导体器件。 在热处理期间，多晶层的选定部分被氧化成绝缘材料。 留下未氧化的多晶层剩余部分作为导电部分。 在制造双极晶体管时，以预定的立体角度进行离子注入，以在预选的其余部分中选择性地引入相反导电性的杂质。 在热处理期间，杂质仅从预选部分扩散到衬底中，以在衬底中形成PN结。 为了制造MOS晶体管，在选择性地在要形成剩余多晶层部分的预定区域的区域上的衬底上预先形成氧化膜。 进行离子注入以在相应的剩余层部分中引入相反导电性的杂质。 氧化膜防止杂质扩散到基底。 除了预定部分之外，杂质仅从相应的剩余部分扩散到基板中。