SEMICONDUCTOR PROCESS EQUIPMENT
    42.
    发明申请
    SEMICONDUCTOR PROCESS EQUIPMENT 审中-公开
    半导体工艺设备

    公开(公告)号:US20160218029A1

    公开(公告)日:2016-07-28

    申请号:US15004406

    申请日:2016-01-22

    CPC classification number: H01L21/67709 H01L21/67736 H01L21/67742

    Abstract: A system for processing a substrate is provided including a first planar motor, a substrate carrier, a first processing chamber, and a first lift. The first planar motor includes a first arrangement of coils disposed along a first horizontal direction, a top surface parallel to the first horizontal direction, a first side, a second side. The substrate carrier has a substrate supporting surface parallel to the first horizontal direction. The first processing chamber has an opening to receive a substrate disposed on the substrate carrier. The first lift includes a second planar motor having a second arrangement of coils disposed along the first horizontal direction. A top surface top surface of the second planar motor is parallel to the first horizontal direction. The first lift is configured to move the top surface of the second planar motor between a first vertical location and a second vertical location.

    Abstract translation: 提供了一种用于处理衬底的系统,包括第一平面电机,衬底载体,第一处理室和第一电梯。 第一平面电动机包括沿着第一水平方向设置的线圈的第一布置,平行于第一水平方向的顶表面,第一侧,第二侧。 衬底载体具有平行于第一水平方向的衬底支撑表面。 第一处理室具有用于接收设置在基板载体上的基板的开口。 第一升降机包括具有沿着第一水平方向设置的线圈的第二布置的第二平面马达。 第二平面电动机的顶表面顶表面平行于第一水平方向。 第一升降机构造成使第二平面马达的顶表面在第一垂直位置和第二垂直位置之间移动。

    METHOD AND SYSTEM FOR SUPPLYING A CLEANING GAS INTO A PROCESS CHAMBER
    44.
    发明申请
    METHOD AND SYSTEM FOR SUPPLYING A CLEANING GAS INTO A PROCESS CHAMBER 有权
    将清洁气体供应到过程室的方法和系统

    公开(公告)号:US20140076236A1

    公开(公告)日:2014-03-20

    申请号:US14087671

    申请日:2013-11-22

    Abstract: A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

    Abstract translation: 提供了一种用于清洁处理室的方法和设备。 在一个实施例中,提供了包括远程等离子体源和具有至少两个处理区域的处理室的处理室。 每个处理区域包括设置在处理区域中的基板支撑组件,配置成将气体提供到基板支撑组件上方的处理区域中的气体分配系统,以及构造成将气体提供到基板支撑组件下方的处理区域中的气体通道。 第一气体管道构造成使来自远程等离子体源的清洁剂通过每个处理区域中的气体分配组件流动,而第二气体管道构造成将一部分清洁剂从第一气体导管转移到第一气体导管的气体通道 每个处理区域。

Patent Agency Ranking