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    SEMICONDUCTOR PROCESSING APPARATUS WITH IMPROVED UNIFORMITY
    2.
    发明申请
    SEMICONDUCTOR PROCESSING APPARATUS WITH IMPROVED UNIFORMITY 有权

    公开(公告)号：US20210066039A1

    公开(公告)日：2021-03-04

    申请号：US16988466

    申请日：2020-08-07

    Applicant: Applied Materials, Inc.

    Inventor： Jian LI ,  Viren KALSEKAR ,  Paul BRILLHART ,  Juan Carlos ROCHA-ALVAREZ ,  Vinay K. PRABHAKAR

    IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  C23C16/505 ,  C23C16/458 ,  C23C16/46

    Abstract: One or more embodiments described herein generally relate to a semiconductor processing apparatus that utilizes high radio frequency (RF) power to improve uniformity. The semiconductor processing apparatus includes an RF powered primary mesh and an RF powered secondary mesh, which are disposed in a substrate supporting element. The secondary RF mesh is positioned underneath the primary RF mesh. A connection assembly is configured to electrically couple the secondary mesh to the primary mesh. RF current flowing out of the primary mesh is distributed into multiple connection junctions. As such, even at high total RF power/current, a hot spot on the primary mesh is prevented because the RF current is spread to the multiple connection junctions. Accordingly, there is less impact on substrate temperature and film non-uniformity, allowing much higher RF power to be used without causing a local hot spot on the substrate being processed.

    METHOD AND TOOL FOR ELECTROSTATIC CHUCKING
    3.
    发明申请
    METHOD AND TOOL FOR ELECTROSTATIC CHUCKING 审中-公开

    公开(公告)号：US20200249263A1

    公开(公告)日：2020-08-06

    申请号：US16748640

    申请日：2020-01-21

    Applicant: Applied Materials, Inc.

    Inventor： Lu XU ,  Sarah Michelle BOBEK ,  Prashant Kumar KULSHRESHTHA ,  Byung Seok KWON ,  Venkata Sharat Chandra PARIMI ,  Kwangduk Douglas LEE ,  Juan Carlos ROCHA-ALVAREZ

    IPC: G01R29/12 ,  C23C16/52 ,  H01L21/66 ,  H01J37/32

    Abstract: Embodiments described herein relate to methods and tools for monitoring electrostatic chucking performance. A performance test is performed that requires only one bowed substrate and one reference substrate. To run the test, the reference substrate is positioned on an electrostatic chuck in a process chamber and the bowed substrate is positioned on the reference substrate. A voltage is applied from a power source to the electrostatic chuck, generating an electrostatic chucking force to secure the bowed substrate to the reference substrate. Thereafter, the applied voltage is decreased incrementally until the electrostatic chucking force is too weak to maintain the bowed substrate in flat form, resulting in dechucking of the bowed wafer. By monitoring the impedance of the chamber during deposition using a sensor, the dechucking threshold voltage can be identified at the point where the impedance of the reference substrate and the impedance of the bowed substrate deviates.

    SHOWERHEAD ASSEMBLY WITH MULTIPLE FLUID DELIVERY ZONES
    6.
    发明申请
    SHOWERHEAD ASSEMBLY WITH MULTIPLE FLUID DELIVERY ZONES 审中-公开

    公开(公告)号：US20190100839A1

    公开(公告)日：2019-04-04

    申请号：US16192228

    申请日：2018-11-15

    Applicant: Applied Materials, Inc.

    Inventor： Amit Kumar BANSAL ,  Juan Carlos ROCHA-ALVAREZ ,  Sanjeev BALUJA ,  Sam H. KIM ,  Tuan Anh NGUYEN

    IPC: C23C16/455

    Abstract: The present disclosure relates to a semiconductor processing apparatus. The processing chamber includes a chamber body and lid defining an interior volume, a substrate support disposed in the interior volume and a showerhead assembly disposed between the lid and the substrate support. The showerhead assembly includes a faceplate configured to deliver a process gas to a processing region defined between the showerhead assembly and the substrate support and an underplate positioned above the faceplate, defining a first plenum between the lid and the underplate, the having multiple zones, wherein each zone has a plurality of openings that are configured to pass an amount of inert gas from the first plenum into a second plenum defined between the faceplate and the underplate, in fluid communication with the plurality of openings of each zone such that the inert gas mixes with the process gas before exiting the showerhead assembly.

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