公开(公告)号：US5316969A

公开(公告)日：1994-05-31

申请号：US993788

申请日：1992-12-21

Applicant: Emi Ishida ,  Thomas W. Sigmon ,  William T. Lynch

Inventor： Emi Ishida ,  Thomas W. Sigmon ,  William T. Lynch

IPC: H01L21/00 ,  H01L21/223 ,  H01L21/225 ,  H01L21/3215

CPC classification number: H01L21/67253 ,  H01L21/223 ,  H01L21/2252 ,  H01L21/2257 ,  H01L21/32155 ,  Y10S148/129

Abstract: Shallow regions are formed in a semiconductor body by irradiating the surface region with a pulsed laser beam in an atmosphere including the dopant. The pulsed laser beam has sufficient intensity to drive in dopant atoms from the atmosphere but insufficient intensity to melt the semiconductor material. A silicide layer can be placed over the surface of the semiconductor material prior to irradiation with the dopant being driven from the atmosphere through the silicide into the surface region of the semiconductor body. Alternatively, the silicide layer can include dopant atoms prior to irradiating the surface region.

Abstract translation: 通过在包括掺杂剂的气氛中用脉冲激光束照射表面区域，在半导体本体中形成浅区域。 脉冲激光束具有足够的强度来驱动来自大气的掺杂剂原子，但不足以使半导体材料熔化。 在辐照之前，硅化物层可以放置在半导体材料的表面上，掺杂剂通过硅化物从大气驱动到半导体本体的表面区域。 或者，硅化物层可以在照射表面区域之前包括掺杂剂原子。