公开(公告)号：US4106959A

公开(公告)日：1978-08-15

申请号：US702393

申请日：1976-07-06

申请人： James Vincent DiLorenzo ,  William Charles Niehaus ,  Lawrence John Varnerin, Jr.

发明人： James Vincent DiLorenzo ,  William Charles Niehaus ,  Lawrence John Varnerin, Jr.

IPC分类号： H01L21/205 ,  H01L29/864 ,  H01L29/207 ,  H01L29/48

CPC分类号： H01L29/864 ,  H01L21/02381 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02546 ,  H01L21/0262 ,  Y10S148/007 ,  Y10S148/017 ,  Y10S148/056 ,  Y10S148/057 ,  Y10S148/065 ,  Y10S148/079 ,  Y10S148/129 ,  Y10S148/139 ,  Y10S438/936

摘要： The operating frequency of an IMPATT diode depends on the width of the depletion region formed during operation. The frequency of high efficiency GaAs IMPATT diodes comprising a non-uniformly doped depletion region contacted by a rectifying barrier can be more precisely fixed by forming a "clump" of charge at exactly the depth below the surface contacted by the rectifying barrier corresponding to the desired depletion region.

摘要翻译： IMPATT二极管的工作频率取决于工作期间形成的耗尽区的宽度。 包括由精整阻挡层接触的非均匀掺杂的耗尽区的高效GaAs IMPATT二极管的频率可以通过在与所需的整流屏障相接触的整流屏障接触的表面正下方的深度处形成“电荷” 耗尽区。

公开(公告)号：US3736158A

公开(公告)日：1973-05-29

申请号：US3736158D

申请日：1971-03-19

申请人： CULLEN G ,  BOLIN S ,  MORRISON A ,  CHIH CHUN WANG

发明人： CULLEN G ,  BOLIN S ,  MORRISON A ,  CHIH CHUN WANG

IPC分类号： C30B15/00 ,  C04B35/44

CPC分类号： C30B15/00 ,  C30B29/26 ,  Y10S117/902 ,  Y10S148/129 ,  Y10S148/15

摘要： AN IMPROVED SINGLE-CRYSTAL MAGNESIUM ALUMINATE SPINEL IS GROWN FROM ALUMINA-RICH MELTS SO THAT THE RESULTING SPINEL CRYSTAL DISPLAYS A SINGLE LATTICE CONSTANT. THIS MATERIAL EXHIBITS SUPERIOR QUALITIES FOR USE AS AN EPITAXIAL SILICON SUBSTRATE, ESPECIALLY IN A VIEW OF ITS CHEMICAL STABILITY. A METHOD IS GIVEN FOR PRODUCING THESE IMPROVED SPINEL CRYSTALS BY AN ADAPTATION OF THE CZOCHRALSKI METHOD SUCH THAT CRYSTALS CAN BE PREPARED FROM NONSTOICHIOMETRIC MELTS.

公开(公告)号：US3885061A

公开(公告)日：1975-05-20

申请号：US38919273

申请日：1973-08-17

申请人： RCA CORP

发明人： CORBOY JOHN FRANCIS ,  CULLEN GLENN WHERRY ,  PASTAL NICHOLAS

IPC分类号： C30B25/02 ,  C23C16/44 ,  C30B29/06 ,  H01L21/20 ,  H01L21/205 ,  H01L21/86 ,  H01L27/12 ,  C23C11/00

CPC分类号： H01L21/0242 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S148/007 ,  Y10S148/025 ,  Y10S148/129 ,  Y10S148/15

摘要： Method of forming an epitaxial crystalline layer on a crystalline substrate by depositing a first portion at a rapid growth rate and a second portion at a slower growth rate.

摘要翻译： 通过以快速生长速率沉积第一部分和以较慢生长速率沉积第二部分在晶体衬底上形成外延晶体层的方法。

公开(公告)号：US3737737A

公开(公告)日：1973-06-05

申请号：US3737737D

申请日：1971-10-06

申请人： SIEMENS AG

发明人： HEYWANG W ,  WINSTEL G ,  ZSCHAUER K

IPC分类号： H01L29/15 ,  H01S5/10 ,  H01S5/12 ,  H01S5/30 ,  H05B33/00

CPC分类号： H01S5/30 ,  H01L29/157 ,  H01S5/10 ,  H01S5/12 ,  Y10S148/049 ,  Y10S148/066 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/107 ,  Y10S148/129 ,  Y10S148/16

摘要： A semiconductor diode for an injection laser characterized by a pn junction which has a lower threshold value for the diode current and/or which diode is capable of continuous operation at room temperature or above. The radiation producing range or zone of the pn junction has a variation in the concentration of doping with the variation being spatial and periodic. Variations have a maximum concentration of doping in a range of about 1016 through 1020 parts per cubic centimeter, a ratio of maximum concentration to minimum concentration of at least 2:1, and a distance between maximum concentrations, in the order of between 10 and 500 atomic distances in the lattice of the crystal. The variations in the concentration of the doping provides one or more interference bands in the forbidden band located between the conduction band and the valence band. An interference band is adjacent the edge of either the valence or the conduction band and the doping substance is selected in such a way that the transition probability for transit between the conduction band or valence band and the adjacent interference band is essentially larger than for inter-band recombination. To produce the semiconductor material for the diode, the doping material concentration is varied during the growth of the crystal. For example, if the crystal is grown from a gas phase by an epitaxial deposition, the concentration of doping material in the gas phase is varied with respect to the desired periodicity and with respect to the speed and time for the growth of the crystal. If the crystal is formed by epitaxial deposition of the material from the liquid phase, the variation in doping is caused by variations in the cooling speed with respect to the speed of the growth of the crystal. The periodic doping can be varied also by selection of the rate of cooling by selection of speed of rotation and by excentricity of the crystal pulled from a melt or by growing the crystal with a spiraling growth.

公开(公告)号：US3208888A

公开(公告)日：1965-09-28

申请号：US11603961

申请日：1961-06-09

申请人： SIEMENS AG

发明人： GUNTHER ZIEGLER ,  GUNTHER WINSTEL

IPC分类号： H01L21/205 ,  H01L29/00

CPC分类号： H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/00 ,  Y10S148/007 ,  Y10S148/017 ,  Y10S148/025 ,  Y10S148/049 ,  Y10S148/051 ,  Y10S148/122 ,  Y10S148/129 ,  Y10S148/158 ,  Y10S438/979

公开(公告)号：US5316969A

公开(公告)日：1994-05-31

申请号：US993788

申请日：1992-12-21

申请人： Emi Ishida ,  Thomas W. Sigmon ,  William T. Lynch

发明人： Emi Ishida ,  Thomas W. Sigmon ,  William T. Lynch

IPC分类号： H01L21/00 ,  H01L21/223 ,  H01L21/225 ,  H01L21/3215

CPC分类号： H01L21/67253 ,  H01L21/223 ,  H01L21/2252 ,  H01L21/2257 ,  H01L21/32155 ,  Y10S148/129

摘要： Shallow regions are formed in a semiconductor body by irradiating the surface region with a pulsed laser beam in an atmosphere including the dopant. The pulsed laser beam has sufficient intensity to drive in dopant atoms from the atmosphere but insufficient intensity to melt the semiconductor material. A silicide layer can be placed over the surface of the semiconductor material prior to irradiation with the dopant being driven from the atmosphere through the silicide into the surface region of the semiconductor body. Alternatively, the silicide layer can include dopant atoms prior to irradiating the surface region.

摘要翻译： 通过在包括掺杂剂的气氛中用脉冲激光束照射表面区域，在半导体本体中形成浅区域。 脉冲激光束具有足够的强度来驱动来自大气的掺杂剂原子，但不足以使半导体材料熔化。 在辐照之前，硅化物层可以放置在半导体材料的表面上，掺杂剂通过硅化物从大气驱动到半导体本体的表面区域。 或者，硅化物层可以在照射表面区域之前包括掺杂剂原子。

公开(公告)号：US3762945A

公开(公告)日：1973-10-02

申请号：US3762945D

申请日：1972-05-01

申请人： BELL TELEPHONE LABOR INC

发明人： DI LORENZO J

IPC分类号： H01L21/00 ,  H01L21/205 ,  H01L21/306 ,  H01L29/00 ,  B44D1/02

CPC分类号： H01L21/00 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/30621 ,  H01L29/00 ,  Y10S148/007 ,  Y10S148/017 ,  Y10S148/051 ,  Y10S148/056 ,  Y10S148/057 ,  Y10S148/065 ,  Y10S148/079 ,  Y10S148/129 ,  Y10S148/135 ,  Y10S148/139

摘要： A technique is described for the fabrication of a novel planar millimeter wave beam lead Schottky barrier device. The inventive technique involves the growth of a 6 to 7 micron layer of epitaxial gallium arsenide doped to 3 to 5 X 1018 atoms/cc on a semi-insulating gallium arsenide substrate by the arsenic trichloride-gallium-hydrogen vapor transport technique. Following, the epitaxial layer is etched in the same ambient by adding helium and establishing a doping level of 5 X 1015 to 2 X 1017 atoms/cc. Growth of a 0.1 to 0.2 micron thick layer of gallium arsenide is then effected. The technique results in the formation of an abrupt doping profile and in a device manifesting enhanced frequency.

公开(公告)号：US3668555A

公开(公告)日：1972-06-06

申请号：US3668555D

申请日：1970-01-14

申请人： PHILIPS CORP

发明人： KASPERKOVITZ WOLFDIETRICH GEOR

IPC分类号： C10G21/30 ,  H01L29/00 ,  H01L45/00 ,  H03B7/14

CPC分类号： H01L29/00 ,  C10G21/30 ,  H01L45/00 ,  Y10S148/049 ,  Y10S148/067 ,  Y10S148/129 ,  Y10S148/134

摘要： An electronically tunable semiconductor device for producing and amplifying electric oscillations, comprising between two ohmic contacts at least one thin layer of a low conductivity and a thicker layer of a higher conductivity, with a difference in doping concentration which is smaller than 5.1010( Epsilon o Epsilon r/q) (Eav/v), where Eav is the field strength with beginning avalanche multiplication, v the saturation velocity of the majority charge carriers, q the electron charge, and Epsilon r the dielectric constant of the semiconductor material.

摘要翻译： 一种用于产生和放大电振荡的电子可调谐半导体器件，包括在两个欧姆接触之间的至少一个低导电薄层和较高导电性的较厚层，掺杂浓度差小于5.1010（εεε r / q）（Eav / v），其中Eav是具有开始雪崩乘法的场强，v是多数电荷载流子的饱和速度，q是电子电荷，ε是半导体材料的介电常数。

公开(公告)号：US3986192A

公开(公告)日：1976-10-12

申请号：US538082

申请日：1975-01-02

申请人： James Vincent DiLorenzo ,  William Charles Niehaus ,  Lawrence John Varnerin, Jr.

发明人： James Vincent DiLorenzo ,  William Charles Niehaus ,  Lawrence John Varnerin, Jr.

IPC分类号： H01L21/205 ,  H01L29/864 ,  H01L29/90 ,  H01L29/48 ,  H01L29/56 ,  H01L29/88

CPC分类号： H01L29/864 ,  H01L21/02381 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02546 ,  H01L21/0262 ,  Y10S148/007 ,  Y10S148/017 ,  Y10S148/056 ,  Y10S148/057 ,  Y10S148/065 ,  Y10S148/079 ,  Y10S148/129 ,  Y10S148/139 ,  Y10S438/936

摘要： The operating frequency of an IMPATT diode depends on the width of the depletion region formed during operation. The frequency of high efficiency GaAs IMPATT diodes comprising a non-uniformly doped depletion region contacted by a rectifying barrier can be more precisely fixed by forming a "clump" of charge at exactly the depth below the surface contacted by the rectifying barrier corresponding to the desired depletion region.

摘要翻译： IMPATT二极管的工作频率取决于工作期间形成的耗尽区的宽度。 包括由精整阻挡层接触的非均匀掺杂的耗尽区的高效GaAs IMPATT二极管的频率可以通过在与所需的整流屏障相接触的整流屏障接触的表面正下方的深度处形成“电荷” 耗尽区。

公开(公告)号：US3904449A

公开(公告)日：1975-09-09

申请号：US46851974

申请日：1974-05-09

申请人： BELL TELEPHONE LABOR INC

发明人： DILORENZO JAMES VINCENT ,  LUTHER LARS CHRISTIAN

IPC分类号： H01L29/864 ,  H01L7/36

CPC分类号： H01L29/864 ,  Y10S148/056 ,  Y10S148/057 ,  Y10S148/067 ,  Y10S148/129 ,  Y10S148/139

摘要： High efficiency GaAs Schottky barrier IMPATT diodes comprising a non-uniformly doped depletion region are fabricated by instantaneously injecting a known volume of a known concentration of dopant at a known pressure during chemical vapor deposition epitaxial growth of the n layer forming the depletion region. This technique has yielded n layers 150 Angstroms thick, doped to carrier concentration values as high as 1018 cm 3, with precise control of the position of the n layer within the depletion region.

摘要翻译： 包含非均匀掺杂的耗尽区的高效GaAs肖特基势垒IMPATT二极管通过在形成耗尽区的n层的化学气相沉积外延生长期间以已知的压力瞬时注入已知体积的已知浓度的掺杂剂来制造。 这种技术已经产生了150埃厚的n +层，掺杂到高达1018厘米3的载流子浓度值，精确控制了耗尽区内n +层的位置。