公开(公告)号：US06797624B2

公开(公告)日：2004-09-28

申请号：US10288058

申请日：2002-11-05

申请人： Woo Jin Lee

发明人： Woo Jin Lee

IPC分类号： H01L21302

CPC分类号： C23F3/00 ,  H01L21/3212 ,  H01L28/65 ,  Y10S438/959

摘要： A solution for ruthenium chemical mechanical planarization containing a nitric acid and an oxidizer is disclosed. A method of forming ruthenium pattern using a polished ruthenium layer is also disclosed. The disclosed solution improves the polishing speed of ruthenium under low polishing pressure, reduces the dishing of ruthenium and decreases scratches generated in the interlayer insulating film. As a result, the disclosed solution and methods improve the techniques for device isolation and reduction of step coverage.

摘要翻译： 公开了含有硝酸和氧化剂的钌化学机械平面化的溶液。 还公开了使用抛光的钌层形成钌图案的方法。 所公开的溶液提高了在低抛光压力下钌的抛光速度，减少了钌的凹陷并减少了层间绝缘膜中产生的划痕。 因此，所公开的解决方案和方法改进了用于设备隔离和降低台阶覆盖率的技术。