公开(公告)号：US20080071049A1

公开(公告)日：2008-03-20

申请号：US11843029

申请日：2007-08-22

申请人： Nora Radu ,  Gene Rossi ,  Eric Smith ,  Yulong Shen ,  Weiying Gao ,  Reid Chesterfield ,  Jeffrey Merlo ,  Daniel Lecloux ,  Frederick Gentry

发明人： Nora Radu ,  Gene Rossi ,  Eric Smith ,  Yulong Shen ,  Weiying Gao ,  Reid Chesterfield ,  Jeffrey Merlo ,  Daniel Lecloux ,  Frederick Gentry

IPC分类号： C08F12/20

CPC分类号： C08G61/12 ,  H01L51/0035 ,  H01L51/0039 ,  H01L51/0059 ,  H01L51/0077 ,  H01L51/5048 ,  H01L51/56 ,  H05B33/20

摘要： There is provided a polymer made from a monomer having Formula I: where: R and Y are independently selected from the group consisting of H, D, alkyl, fluoroalkyl, aryl, fluoroaryl, alkoxy, aryloxy, NR″2, R′, R′ is a crosslinkable group; R″ is independently selected from the group consisting of H, alkyl, fluoroalkyl, aryl, fluoroaryl, and R′; X is a leaving group; Z is C, Si, or N; Q is (ZR″n)b; a is an integer from 0 to 5; b is an integer from 0 to 20; c is an integer from 0 to 4; q is an integer from 0 to 7; and n is an integer from 1 to 2.

摘要翻译： 提供由具有式I的单体制备的聚合物：其中：R和Y独立地选自H，D，烷基，氟代烷基，芳基，氟芳基，烷氧基，芳氧基，NR'2，R'， R'是可交联基团; R“独立地选自H，烷基，氟代烷基，芳基，氟代芳基和R'; X是离职团体 Z是C，Si或N; Q是（ZR“n”）b

公开(公告)号：US07732062B1

公开(公告)日：2010-06-08

申请号：US11319940

申请日：2005-12-28

申请人： Che-Hsiung Hsu ,  Weiying Gao ,  Hong Meng

发明人： Che-Hsiung Hsu ,  Weiying Gao ,  Hong Meng

IPC分类号： A61K31/498

CPC分类号： H01L51/002 ,  B82Y10/00 ,  H01L51/0039 ,  H01L51/0046 ,  H01L51/0051 ,  H01L51/0054 ,  H01L51/0059 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/5052

摘要： Provided are organic n-doped electron transport layers comprising at least one electron transport material and at least one electron rich dopant material and organic p-doped hole injection layers comprising at least one hole transport material and at least one electron deficient dopant material.

摘要翻译： 提供了包括至少一种电子传输材料和至少一种富电子掺杂剂材料的有机n掺杂电子传输层和包含至少一种空穴传输材料和至少一种电子缺陷掺杂剂材料的有机p掺杂空穴注入层。

公开(公告)号：US20130248842A1

公开(公告)日：2013-09-26

申请号：US13989177

申请日：2011-11-30

申请人： Weiying Gao ,  Ying Wang

发明人： Weiying Gao ,  Ying Wang

IPC分类号： H05K1/09 ,  H01L51/44 ,  H05K1/02 ,  H01L51/52

CPC分类号： H05K1/09 ,  H01L51/441 ,  H01L51/5206 ,  H01L51/5215 ,  H01L2251/55 ,  H01L2251/558 ,  H05K1/02

摘要： There is provided a composite electrode including either a single layer or a bilayer. The single layer electrode includes an alloy of a first metal having an electrical conductivity greater than 105 Scm−1 and a real refractive index less than 2.1 in the range of 380 to 780 nm. The bilayer electrode includes: (a) layer M1 having a first thickness and including the first metal; and (b) layer M2 having a second thickness and including a second metal, where the second metal has an electrical conductivity less than 105 Scm−1. In the bilayer electrode, layer M1 is in physical contact with layer M2, and the first thickness is greater than the second thickness.

摘要翻译： 提供了包括单层或双层的复合电极。 单层电极包括导电率大于105Scm-1的第一金属和在380至780nm范围内小于2.1的实际折射率的合金。 双层电极包括：（a）具有第一厚度且包括第一金属的层M1; 和（b）具有第二厚度且包括第二金属的层M2，其中第二金属具有小于105Scm-1的导电性。 在双层电极中，层M1与层M2物理接触，第一厚度大于第二厚度。

公开(公告)号：US20100187982A1

公开(公告)日：2010-07-29

申请号：US12642093

申请日：2009-12-18

申请人： Che-Hsiung Hsu ,  Weiying Gao ,  Shiva Prakash

发明人： Che-Hsiung Hsu ,  Weiying Gao ,  Shiva Prakash

IPC分类号： H01L51/54 ,  B32B5/16

CPC分类号： H01L51/5088 ,  H01L51/0037 ,  H01L51/004 ,  H01L2251/5369 ,  Y10T428/24893

摘要： The present invention relates to buffer bilayers, and their use in electronic devices. The bilayer has a first layer including (a) at least one electrically conductive polymer doped with at least one non-highly-fluorinated acid polymer and (b) at least one highly-fluorinated acid polymer, and a second layer including inorganic nanoparticles which are oxides or sulfides.

摘要翻译： 本发明涉及缓冲双层体及其在电子设备中的应用。 双层具有第一层，其包括（a）至少一种掺杂有至少一种非高度氟化的酸聚合物的导电聚合物和（b）至少一种高度氟化的酸聚合物，以及包含无机纳米颗粒的第二层， 氧化物或硫化物。

公开(公告)号：US08461758B2

公开(公告)日：2013-06-11

申请号：US12642093

申请日：2009-12-18

申请人： Che-Hsiung Hsu ,  Weiying Gao ,  Shiva Prakash

发明人： Che-Hsiung Hsu ,  Weiying Gao ,  Shiva Prakash

IPC分类号： H01L51/52 ,  H01L51/50

CPC分类号： H01L51/5088 ,  H01L51/0037 ,  H01L51/004 ,  H01L2251/5369 ,  Y10T428/24893

摘要： The present invention relates to buffer bilayers, and their use in electronic devices. The bilayer has a first layer including (a) at least one electrically conductive polymer doped with at least one non-highly-fluorinated acid polymer and (b) at least one highly-fluorinated acid polymer, and a second layer including inorganic nanoparticles which are oxides or sulfides.

摘要翻译： 本发明涉及缓冲双层体及其在电子设备中的应用。 双层具有第一层，其包括（a）至少一种掺杂有至少一种非高度氟化的酸聚合物的导电聚合物和（b）至少一种高度氟化的酸聚合物，以及包含无机纳米颗粒的第二层， 氧化物或硫化物。

公开(公告)号：US20130240865A1

公开(公告)日：2013-09-19

申请号：US13989253

申请日：2011-12-13

申请人： Weiying Gao ,  Norman Herron ,  Mark A. Guidry

发明人： Weiying Gao ,  Norman Herron ,  Mark A. Guidry

IPC分类号： H01L51/00 ,  H01L51/44 ,  H01L51/50

CPC分类号： H01L51/0058 ,  C07D209/82 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1014 ,  C09K2211/1029 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/44 ,  H01L51/5012 ,  H01L2251/552 ,  H05B33/10

摘要： There is provided an electroactive compound having Formula In the formula: Ar1, Ar2, and Ar3 are the same or different and are aryl groups; R1 is the same or different at each occurrence and is D, alkyl or aryl; a is an integer from 0-4. The compound has a LUMO level deeper than −2.3 eV and a band gap of at least 2.9 eV.

摘要翻译： 提供了具有式的电活性化合物。式中Ar 1，Ar 2和Ar 3相同或不同，为芳基; R1在每次出现时相同或不同，为D，烷基或芳基; a是0-4的整数。 该化合物具有比-2.3eV更深的LUMO能级和至少2.9eV的带隙。

公开(公告)号：US20130126852A1

公开(公告)日：2013-05-23

申请号：US13810213

申请日：2011-08-24

申请人： Weiying Gao ,  Norman Herron

发明人： Weiying Gao ,  Norman Herron

IPC分类号： H01L51/00

CPC分类号： H01L51/0072 ,  B32B2457/206 ,  C09K11/06 ,  C09K2211/185 ,  H01L51/0054 ,  H01L51/006 ,  H01L51/0085 ,  H01L51/5028 ,  H01L2251/552 ,  H05B33/14 ,  H05B33/20 ,  Y10T428/1055

摘要： There is provided a photoactive composition including: (a) 50-99 wt % based on the total weight of the photoactive composition, of at least one host material having a HOMO energy level; (b) 1-10 wt % based on the total weight of the photoactive composition, of an emissive dopant; and (c) 0.1 to 10 wt % based on the total weight of the photoactive composition, of a non-emissive dopant. The non-emissive dopant is an organometallic iridium complex that has a HOMO energy level shallower than the HOMO energy level of the host.

摘要翻译： 提供了一种光活性组合物，其包括：（a）基于光活性组合物的总重量的50-99重量％的至少一种具有HOMO能级的主体材料; （b）基于光活性组合物的总重量的1-10重量％的发光掺杂剂; 和（c）基于光活性组合物的总重量的0.1至10重量％的非发射掺杂剂。 非发射掺杂剂是具有比主体的HOMO能级更浅的HOMO能级的有机金属铱络合物。

公开(公告)号：US09276217B2

公开(公告)日：2016-03-01

申请号：US13989253

申请日：2011-12-13

申请人： Weiying Gao ,  Norman Herron ,  Mark A Guidry

发明人： Weiying Gao ,  Norman Herron ,  Mark A Guidry

IPC分类号： H01L51/00 ,  H01L51/44 ,  H01L51/50 ,  C09K11/06 ,  H05B33/10 ,  C07D209/82

CPC分类号： H01L51/0058 ,  C07D209/82 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1014 ,  C09K2211/1029 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/44 ,  H01L51/5012 ,  H01L2251/552 ,  H05B33/10

摘要： There is provided an electroactive compound having Formula I In the formula: Ar1, Ar2, and Ar3 are the same or different and are aryl groups; R1 is the same or different at each occurrence and is D, alkyl or aryl; a is an integer from 0-4. The compound has a LUMO level deeper than −2.3 eV and a band gap of at least 2.9 eV.

摘要翻译： 提供具有式I的电活性化合物在式中：Ar 1，Ar 2和Ar 3相同或不同，为芳基; R1在每次出现时相同或不同，为D，烷基或芳基; a是0-4的整数。 该化合物具有比-2.3eV更深的LUMO能级和至少2.9eV的带隙。

公开(公告)号：US20140001459A1

公开(公告)日：2014-01-02

申请号：US14005021

申请日：2012-04-09

申请人： Weiying Gao

发明人： Weiying Gao

IPC分类号： H01L51/00

CPC分类号： H01L51/0058 ,  C07C2603/24 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1029 ,  C09K2211/1088 ,  H01L51/0052 ,  H01L51/5012

摘要： There is provided an electronic device having two electrical contact layers with a photoactive layer between them. The photoactive layer has a single component which is a compound having Formula I: In Formula I: R1 through R8 are the same or different at each occurrence and are H, D, alkyl, alkoxy, aryl, aryloxy, siloxane, or silyl; Ar1 and Ar2 are the same or different and are aryl groups; and Ar3 and Ar4 are the same or different and are H, D, or aryl groups.

摘要翻译： 提供了一种具有两个电接触层的电子器件，它们之间具有光敏层。 光活性层具有单一成分，其为具有式I的化合物：在式I中：R 1至R 8在每次出现时相同或不同，为H，D，烷基，烷氧基，芳基，芳氧基，硅氧烷或甲硅烷基; Ar 1和Ar 2相同或不同，为芳基; 且Ar 3和Ar 4相同或不同，为H，D或芳基。

公开(公告)号：US20120001164A1

公开(公告)日：2012-01-05

申请号：US13256289

申请日：2010-05-11

申请人： Weiying Gao ,  Dean T. Deibler

发明人： Weiying Gao ,  Dean T. Deibler

IPC分类号： H01L51/52 ,  H01L51/54

CPC分类号： H01L51/5221

摘要： There is provided an organic electronic device including an anode; a photoactive layer; an electron transport layer; an electron tunneling layer having a thickness in the range of 10-50 Å; and a cathode.

摘要翻译： 提供了一种包括阳极的有机电子器件; 光敏层; 电子传输层; 电子隧道层，其厚度在10〜50的范围内; 和阴极。