摘要:
A method for manufacturing a flexible display device includes forming a heat generator on a carrier substrate, forming a flexible substrate on the heat generator, forming a thin film transistor on the flexible substrate, forming a light emitting element connected to the thin film transistor, and separating the flexible substrate from the heat generator by application of heat to the flexible substrate, the application of heat including generation of heat by the heat generator.
摘要:
In an organic light emitting display, a conductive layer is formed on the bottom surface of a substrate, and the conductive layer is used as a wiring line for supplying a power source, and as the electrode of a capacitor. Therefore, it is possible to easily secure the aperture ratio of a pixel, to easily solve the problem of IR drops by controlling the area or thickness of the conductive layer, and to easily secure the electrostatic capacity of the capacitor. In particular, in the case of a front surface light emitting structure, since a capacitor of a metal/insulating layer/metal (MIM) structure may be formed in a light emitting region, enough aperture ratio and electrostatic capacity may be secured. Therefore, a high resolution organic light emitting display may be easily realized, and enough aperture ratio and electrostatic capacity are secured so as to realize high picture quality.
摘要:
A thin film transistor and a method of manufacturing the same are disclosed. More specifically, there is provided a thin film transistor having a thin film transistor and a method of manufacturing the same wherein an inorganic layer and an organic planarization layer are sequentially formed on the surface of a substrate on source/drain electrode of a thin film transistor having a semiconductor layer, a gate, source/drain areas and the source/drain electrodes, and a blanket etching process is performed to the organic planarization layer to planarize the inorganic layer. After forming a photoresist pattern on the inorganic layer, an etching process is performed to form a hole coupling a pixel electrode with one of the source/drain electrodes. According to the manufacturing method, the hole may be formed using one mask, thereby simplifying a manufacturing process, and improving an adhesion with the pixel electrode by the inorganic layer formed above. This thin film transistor may be appropriately applied to the active matrix organic electro luminescence display.
摘要:
An organic light emitting display device includes a substrate formed of a conductive material and a luminescent element having an organic layer formed on the substrate, and an anode and a cathode interposing the organic layer, wherein the substrate physically contacts the cathode and provides a voltage to the cathode.
摘要:
An organic light emitting display (OLED) device having a simple process of fabrication and improved lifetime and reliability, and a method of fabricating the same are disclosed. The OLED device comprises: a substrate; a sealing member which seals a plurality of pixels arranged on a pixel region; and a sealing material which bonds the substrate and the sealing member. Each of the pixels includes a thin film transistor disposed on the substrate, an EL device including a lower electrode connected to the thin film transistor, a pixel isolation layer exposing a portion of the lower electrode, an organic layer formed on at least the exposed portion of the lower electrode, and an upper electrode. A pad interconnection line of a pad interconnection region is covered by a first insulating layer, and a pad of a pad region is covered by a second insulating layer so as to expose a portion of the pad. The first insulating layer and the second insulating layer are formed of the same material as a lower layer of the pixel isolation layer.
摘要:
A flat panel display device is disclosed that may include a light-emitting layer portion including a first electrode, a second electrode, and an organic light-emitting layer between the first and second electrodes; at least two thin film transistors for controlling the light-emitting layer portion; a scanning signal line for supplying a scanning signal to the thin film transistor; a data signal line for supplying a data signal to the thin film transistor; a light emitting region having a common power supply line for supplying current to the light-emitting layer portion; and a peripheral common power supply line having at least one curved portion and connected to the common power supply line on a panel of a non-light emitting region except the light emitting region, wherein the common power supply line has a reduced wiring width while maintaining a constant wiring resistance to thereby reduce the total size of the display panel.
摘要:
An organic light emitting display (OLED) device having a simple process of fabrication and improved lifetime and reliability, and a method of fabricating the same are disclosed. The OLED device comprises: a substrate; a sealing member which seals a plurality of pixels arranged on a pixel region; and a sealing material which bonds the substrate and the sealing member. Each of the pixels includes a thin film transistor disposed on the substrate, an EL device including a lower electrode connected to the thin film transistor, a pixel isolation layer exposing a portion of the lower electrode, an organic layer formed on at least the exposed portion of the lower electrode, and an upper electrode. A pad interconnection line of a pad interconnection region is covered by a first insulating layer, and a pad of a pad region is covered by a second insulating layer so as to expose a portion of the pad. The first insulating layer and the second insulating layer are formed of the same material as a lower layer of the pixel isolation layer.
摘要:
A thin film transistor and an active matrix flat panel device. By forming a conductive material layer having multiple profiles, critical dimension (CD) bias is reduced and step coverage is enhanced. The thin film transistor includes the conductive material layer formed on an insulating substrate, wherein the conductive material layer is composed of at least one thin film transistor conductive material layer, and an edge portion of the conductive material layer is composed of multiple profiles with multiple edge taper angles.
摘要:
A flat panel display device is disclosed that may include a light-emitting layer portion including a first electrode, a second electrode, and an organic light-emitting layer between the first and second electrodes; at least two thin film transistors for controlling the light-emitting layer portion; a scanning signal line for supplying a scanning signal to the thin film transistor; a data signal line for supplying a data signal to the thin film transistor; a light emitting region having a common power supply line for supplying current to the light-emitting layer portion; and a peripheral common power supply line having at least one curved portion and connected to the common power supply line on a panel of a non-light emitting region except the light emitting region, wherein the common power supply line has a reduced wiring width while maintaining a constant wiring resistance to thereby reduce the total size of the display panel.
摘要:
A thin film transistor and a method of manufacturing the same are disclosed. More specifically, there is provided a thin film transistor having a thin film transistor and a method of manufacturing the same wherein an inorganic layer and an organic planarization layer are sequentially formed on the surface of a substrate on source/drain electrode of a thin film transistor having a semiconductor layer, a gate, source/drain areas and the source/drain electrodes, and a blanket etching process is performed to the organic planarization layer to planarize the inorganic layer. After forming a photoresist pattern on the inorganic layer, an etching process is performed to form a hole coupling a pixel electrode with one of the source/drain electrodes. According to the manufacturing method, the hole may be formed using one mask, thereby simplifying a manufacturing process, and improving an adhesion with the pixel electrode by the inorganic layer formed above. This thin film transistor may be appropriately applied to the active matrix organic electro luminescence display.